DIM1200NSM17-E000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 1/9 www.dynexsemi.com pds5644-1.0 august 2003 features trench gate field stop technology low conduction losses low switching losses 10 s short circuit withstand isolated mmc base with aln substrates high thermal cycling capability applications high reliability inverters wind turbines motor controllers ups systems traction propulsion drives auxiliaries the powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600v to 3300v and currents up to 3600a. the DIM1200NSM17-E000 is a single switch 1700v, n channel enhancement mode, insulated gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus full 10 s short circuit withstand. this module is optimised for applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ordering information order as: DIM1200NSM17-E000 note: when ordering, please use the complete part number. key parameters v ces 1700v v ce(sat) * (typ) 2.0v i c (max) 1200a i c(pk) (max) 2400a * measured at auxiliary terminals. DIM1200NSM17-E000 single switch igbt module fig. 1 single switch circuit diagram fig. 2 module outline outline type code: n (see package details for further information) c2 c1 aux c g aux e e1 e2 external connection external connection c1 e1 c2 e2 g e 2 c 1 e 2 - aux emitter c 1 - aux collector
DIM1200NSM17-E000 2/9 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com test conditions v ge = 0v - t case = 75?c 1ms, t case = 110?c t case = 25?c, t j = 150?c v r = 0, t p = 10ms, t vj = 125?c commoned terminals to base plate. ac rms, 1 min, 50hz iec1287. v 1 = 1800v, v 2 = 1300v, 50hz rms symbol v ces v ges i c i c(pk) p max i 2 t v isol q pd absolute maximum ratings stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety prec autions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25?c unless stated otherwise units v v a a kw ka 2 s v pc max. 1700 20 1200 2400 6.94 200 4000 10 parameter collector-emitter voltage gate-emitter voltage continuous collector current peak collector current max. transistor power dissipation diode i 2 t value isolation voltage - per module partial discharge - per module
DIM1200NSM17-E000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 3/9 www.dynexsemi.com test conditions continuous dissipation - junction to case continuous dissipation - junction to case mounting torque 5nm (with mounting grease) transistor diode - mounting - m6 electrical connections - m4 electrical connections - m8 parameter thermal resistance - transistor (per arm) thermal resistance - diode (per arm) thermal resistance - case to heatsink (per module) junction temperature storage temperature range screw torque thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 33mm clearance: 20mm cti (critical tracking index): 175 symbol r th(j-c) r th(j-c) r th(c-h) t j t stg - units ?c/kw ?c/kw ?c/kw ?c ?c ?c nm nm nm max. 18 40 8 150 125 125 5 2 10 typ. - - - - - - - - - min. - - - - - C40 - - -
DIM1200NSM17-E000 4/9 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com test conditions v ge = 0v, v ce = v ces v ge = 0v, v ce = v ces , t case = 125?c v ge = 20v, v ce = 0v i c = 48ma, v ge = v ce v ge = 15v, i c = 1200a v ge = 15v, i c = 1200a, , t case = 125?c dc t p = 1ms i f = 1200a i f = 1200a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz - - t j = 125?c, v cc = 1000v, i 1 t p 10 s, v ce(max) = v ces C l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward current diode maximum forward current diode forward voltage input capacitance module inductance internal transistor resistance short circuit. i sc electrical characteristics t case = 25?c unless stated otherwise. symbol i ces i ges v ge(th) v ce(sat) ? i f i fm v f ? c ies l m r int sc data units ma ma a v v v a a v v nf nh m ? a a max. 5 25 4 6.4 2.4 3.0 1200 2400 2.3 2.4 - - - - - typ. - - - 5.8 2.0 2.3 - - 1.9 2.0 105 20 0.27 4500 4300 min. - - - 5.2 - - - - - - - - - - - note: ? measured at auxiliary terminals. * l is the circuit inductance + l m
DIM1200NSM17-E000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 5/9 www.dynexsemi.com units ns ns mj ns ns mj c c a mj max. - - - - - - - - - - typ. 1200 200 320 900 220 300 14 275 950 180 min. - - - - - - - - - - test conditions i c = 1200a v ge = 15v v ce = 900v r g(on) = 1.2 ? r g(off) = 1.5 ? l ~ 100nh i f = 1200a, v r = 900v, di f /dt = 5200a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge diode reverse current diode reverse recovery energy electrical characteristics t case = 25?c unless stated otherwise symbol t d(off) t f e off t d(on) t r e on q g q rr i rr e rec t case = 125?c unless stated otherwise units ns ns mj ns ns mj c a mj max. - - - - - - - - - typ. 1300 300 420 900 250 400 475 1150 320 min. - - - - - - - - - test conditions i c = 1200a v ge = 15v v ce = 900v r g(on) = 1.2 ? r g(off) = 1.5 ? l ~ 100nh i f = 1200a, v r = 900v, di f /dt = 5200a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss diode reverse recovery charge diode reverse current diode reverse recovery energy symbol t d(off) t f e off t d(on) t r e on q rr i rr e rec note: switching characteristic measurements taken using standard driver circuit conditions.
DIM1200NSM17-E000 6/9 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com typical characteristics fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance 0 50 100 150 200 250 300 350 400 450 500 0 200 400 600 800 1000 1200 collector current, i c - (a) switching energy, e sw - (mj) e on e off e rec conditions: t case = 125oc v cc = 900v r g(on) = 1.2 ohms r g(off) = 1.5 ohms 0 250 500 750 1000 01220 gate resistance, r g - (ohms) switching energy, e sw - (mj) 48 16 conditions: t case = 125oc i c = 600a v cc = 900v e on e off e rec 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 1.0 2.0 3.0 4.0 5.0 collector-emitter voltage, v ce - (v) collector current, i c - (a) v ge = 10v v ge = 12v v ge = 15v v ge = 20v common emitter t case = 125?c 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 collector-emitter voltage, v ce - (v) collector current, i c - (a) v ge = 10v v ge = 12v v ge = 15v v ge = 20v common emitter t case = 25?c
DIM1200NSM17-E000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 7/9 www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 i gbt reverse bias safe operating area fig. 9 di ode reverse bias safe operating area 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2600 2400 2800 0 400 800 1200 1600 2000 collector-emitter voltage, v ce - (v) collector current, i c - (a) t case = 125?c v ge = 15v r g(min) = 1.5 ohms module chip fig. 10 transient thermal impedance 1 0.1 10 100 0.001 0.01 1 0.1 10 pulse width, t p - (s) transient thermal impedance, z th (j-c) - (?/kw ) igbt r i ( ? c/kw) t i (ms) diode r i ( ? c/kw) t i (ms) 1 0.56 0.12 1.23 0.11 2 4.00 3.89 9.26 4.24 3 5.64 47.15 12.96 48.75 4 7.81 257.21 16.53 256.75 diode transistor 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 0.5 1.0 1.5 2.0 2.5 3.0 forward voltage, v f - (v) forward current, i f - (a) t j = 25?c t j = 125?c 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 1800 reverse voltage, v r - (v) reverse recovery current, i rr - (a) t j = 125?c
DIM1200NSM17-E000 8/9 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com 140 31.5 4x m8 28 5 38 6x m4 45.2 40 20 43.5 18 57 57 65 65 6x ? 7 62 20 62 20 48.8 10.35 24.5 10.65 c1 e1 c2 e2 g e 2 c 1 main terminal screw plastic hole depth (m8) = 16.8 0.3 auxiliary and gate pin plastic hole depth (m4) = 9 0.3 copper terminal thickness, main terminal pins = 1.5 0.1 copper terminal thickness, auxiliary and gate pin = 0.9 0.1 nominal weight: 1050g module outline type code: n e 2 - aux emitter c 1 - aux collector package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated o therwise. do not scale. c2 c1 aux c g aux e e1 e2 external connection external connection fig. 11 package details
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
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