frequency multipliers - active - chip 2 2 - 32 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc449 gaas mmic x2 active frequency multiplier, 27 - 33 ghz output v01.1007 general description features functional diagram electrical specifi cations, t a = +25 c, vdd= 5.0v, 0 dbm drive level typical applications the hmc449 is suitable for: ? point-to-point & multi-point radios ? vsat radios ? military ew, ecm, c 3 i ? test instrumentation ? space the hmc449 die is a x2 active broadband frequency multiplier chip utilizing gaas phemt technology. when driven by a 0 dbm signal the multiplier provides +10 dbm typical output power from 28 to 32 ghz. the fo and 3fo isolations are >34 dbc and >17 dbc respectively at 30 ghz. the hmc449 is ideal for use in lo multiplier chains yielding a reduced parts count vs. traditional approaches. the low additive ssb phase noise of -132 dbc/hz at 100 khz offset helps maintain good system noise performance. all data is with the chip in a 50 ohm test fi xture connected via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils). output power: +10 dbm wide input power range: -4 to +6 dbm fo isolation: 34 dbc @ fout= 30 ghz 100 khz ssb phase noise: -132 dbc/hz single supply: 5v @ 50 ma die size: 1.10 x 1.20 x 0.1 mm parameter min. typ. max. units frequency range, input 13.5 - 16.5 ghz frequency range, output 27 - 33 ghz output power 610 dbm fo isolation (with respect to output level) fout= 30 ghz 34 dbc 3fo isolation (with respect to output level) fout= 30 ghz 17 dbc input return loss 13 db output return loss 9db ssb phase noise (100 khz offset) -132 dbc/hz supply current (idd) 50 70 ma
frequency multipliers - active - chip 2 2 - 33 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output power vs. temperature @ 0 dbm drive level output power vs. supply voltage @ 0 dbm drive level output power vs. drive level pout vs. pin @ 3 frequencies isolation @ 0 dbm drive level 0 3 6 9 12 15 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c output power (dbm) output frequency (ghz) -12 -8 -4 0 4 8 12 16 26 27 28 29 30 31 32 33 34 -6 dbm -4 dbm -2 dbm 0 dbm +2 dbm +4 dbm +6 dbm output power (dbm) output frequency (ghz) 0 3 6 9 12 15 26 27 28 29 30 31 32 33 34 vdd=4.5v vdd=5.0v vdd=5.5v output power (dbm) output frequency (ghz) -30 -25 -20 -15 -10 -5 0 5 10 15 26 27 28 29 30 31 32 33 34 fo 2fo 3fo output power (dbm) output frequency (ghz) -5 -1 3 7 11 15 -6 -4 -2 0 2 4 6 8 fout=27 ghz fout=30 ghz fout=33 ghz output power (dbm) input power (dbm) hmc449 v01.1007 gaas mmic x2 active frequency multiplier, 27 - 33 ghz output
frequency multipliers - active - chip 2 2 - 34 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature ssb phase noise performance, fout = 26.4 ghz, pin = 0 dbm -20 -15 -10 -5 0 13 13.5 14 14.5 15 15.5 16 16.5 17 +25 c +85 c -55 c return loss (db) frequency (ghz) -20 -15 -10 -5 0 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c return loss (db) frequency (ghz) -160 -140 -120 -100 -80 -60 -40 -20 0 10 2 10 3 10 4 10 5 10 6 10 7 ssb phase noise (dbc/hz) offset frequency (hz) hmc449 v01.1007 gaas mmic x2 active frequency multiplier, 27 - 33 ghz output
frequency multipliers - active - chip 2 2 - 35 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings outline drawing notes: 1. all dimensions are in inches [millimeters]. 2. die thickness is .004 3. typical bond pad is .004 square. 4. typical bond spacing is .006 center to center. 5. bond pad metalization: gold 6. backside metalization: gold 7. backside metal is ground. 8. no connection required for unlabeled bond pads. rf input (vcc= +5v) +20 dbm supply voltage (vdd) +6.0 vdc channel temperature 175 c continuous pdiss (t= 85 c) (derate 8.3 mw/c above 85 c) 744 mw thermal resistance (junction to die bottom) 121 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c typical supply current vs. vdd vdd (v) idd (ma) 4.5 49 5.0 50 5.5 51 note: multiplier will operate over full voltage range shown above. electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc449 v01.1007 gaas mmic x2 active frequency multiplier, 27 - 33 ghz output
frequency multipliers - active - chip 2 2 - 36 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram pad number function description interface schematic 1rfin pin is ac coupled and matched to 50 ohms. 2, 3 vdd supply voltage 5v 0.5v. 4rfout pin is ac coupled and matched to 50 ohms. gnd die bottom must be connected to rf ground. pad description hmc449 v01.1007 gaas mmic x2 active frequency multiplier, 27 - 33 ghz output
frequency multipliers - active - chip 2 2 - 37 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) th ick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. c and a tool temperature of 265 deg. c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. c. do not expose the chip to a temperature greater than 320 deg. c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc449 v01.1007 gaas mmic x2 active frequency multiplier, 27 - 33 ghz output
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