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k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 1 - rev 1.0 nov 2001 k7a803201b k7a803601b document title 256kx36 & 256kx32 & 512kx18-bit synchronous pipelined burst sram the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. revision history rev. no. 0.0 0.1 0.2 1.0 remark preliminary preliminary preliminary final history initial draft 1. delete pass- through 1. add x32 org part and industrial temperature part 1. final spec release 2. change i sb2 form 50ma to 60ma draft date may. 18 . 2001 june. 26. 2001 aug. 11. 2001 nov. 16. 2001
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 2 - rev 1.0 nov 2001 k7a803201b k7a803601b 8mb sb/spb synchronous sram ordering information org. part number mode vdd speed ft ; access time(ns) pipelined ; cycle time(mhz) pkg temp 512kx18 k7b801825b-q(h)c(i)65/75/85 sb 3.3 6.5/7.5/8.5 ns q: 100tqfp h: 119bga c: commercial temperature range i: industrial temperature range k7a801800b-q(h)c(i)16/14 spb(2e1d) 3.3 167/138 mhz k7a801809b-q(h)c(i)25/22/20 spb(2e1d) 3.3 250/225/200 mhz k7a801801b-qc(i)16/14 spb(2e2d) 3.3 167/138 mhz k7a801808b-qc(i)25/22/20 spb(2e2d) 3.3 250/225/200 mhz 256kx32 k7b803225b-qc(i)65/75/85 sb 3.3 6.5/7.5/8.5 ns k7a803200b-qc(i)16/14 spb(2e1d) 3.3 167/138 mhz k7a803209b-qc(i)25/22/20 spb(2e1d) 3.3 250/225/200 mhz k7a803201b-qc(i)16/14 spb(2e2d) 3.3 167/138 mhz k7a803208b-qc(i)25/22/20 spb(2e2d) 3.3 250/225/200 mhz 256kx36 k7b803625b-q(h)c(i)65/75/85 sb 3.3 6.5/7.5/8.5 ns k7a803600b-q(h)c(i)16/14 spb(2e1d) 3.3 167/138 mhz k7a803609b-q(h)c(i)25/22/20 spb(2e1d) 3.3 250/225/200 mhz k7a803601b-qc(i)16/14 spb(2e2d) 3.3 167/138 mhz k7a803608b-qc(i)25/22/20 spb(2e2d) 3.3 250/225/200 mhz
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 3 - rev 1.0 nov 2001 k7a803201b k7a803601b 256kx36 & 256kx32 & 512kx18-bit synchronous pipelined burst sram the k7a803601b, k7a803201b and k7a801801b are 9,437,184-bit synchronous static random access memory designed for high performance second level cache of pentium and power pc based system. it is organized as 256k(512k) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache ram applications; gw , bw , lbo , zz. write cycles are internally self-timed and synchro- nous. full bus-width write is done by gw , and each byte write is performed by the combination of we x and bw when gw is high. and with cs 1 high, adsp is blocked to con- trol signals. burst cycle can be initiated with either the address sta- tus processor( adsp ) or address status cache control- ler( adsc ) inputs. subsequent burst addresses are generated internally in the system s burst sequence and are controlled by the burst address advance( adv ) input. lbo pin is dc operated and determines burst sequence(linear or interleaved). zz pin controls power down state and reduces stand- by current regardless of clk. the k7a803601b, k7a803201b and k7a801801b are fabricated using samsung s high performance cmos technology and is available in a 100pin tqfp package (100pin tqfp only for k7a803201b). multiple power and ground pins are utilized to minimize ground bounce. general description features logic block diagram ? synchronous operation. ? 2 stage pipelined operation with 4 burst. ? on-chip address counter. ? self-timed write cycle. ? on-chip address and control registers. ? 3.3v+0.165v/-0.165v power supply. ? i/o supply voltage 3.3v+0.165v/-0.165v for 3.3v i/o or 2.5v+0.4v/-0.125v for 2.5v i/o ? 5v tolerant inputs except i/o pins. ? byte writable function. ? global write enable controls a full bus-width write. ? power down state via zz signal. ? lbo pin allows a choice of either a interleaved burst or a linear burst. ? three chip enables for simple depth expansion with no data conten- tion only for tqfp ; 2cycle enable, 2cycle disable. ? asynchronous output enable control. ? adsp , adsc , adv burst control pins. ? ttl-level three-state output. ? 100-tqfp-1420a package ? operating in commeical and industrial temperature range. clk lbo adv adsc adsp cs 1 cs 2 cs 2 gw bw we x oe zz dqa 0 ~ dqd7 or dqa0 ~ dqb7 burst control logic burst 256kx36/32 , 512kx18 address control output data-in address counter memory array register register buffer logic c o n t r o l r e g i s t e r c o n t r o l r e g i s t e r a 0 ~a 1 a 0 ~a 1 or a 2 ~a 18 or a 0 ~a 18 register dqpa ~ dqpd a 0 ~a 17 a 2 ~a 17 (x=a,b,c,d or a,b) dqp a ,dqp b fast access times parameter symbol -16 -14 unit cycle time tcyc 6.0 7.2 ns clock access time tcd 3.5 4.0 ns output enable access time toe 3.5 4.0 ns
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 4 - rev 1.0 nov 2001 k7a803201b k7a803601b pin configuration (top view) pin name note : 1. a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. 2. the pin 42 is reserved for address bit for the 16mb . 3. dqpa~dqpd are nc for k7a803201b. symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 17 adv adsp adsc clk cs 1 cs 2 cs 2 we x(x=a,b,c,d) oe gw bw zz lbo address inputs burst address advance address status processor address status controller clock chip select chip select chip select byte write inputs output enable global write enable byte write enable power down input burst mode control 32,33,34,35,36,37,43 44,45,46,47,48,49,50 81,82,99,100 83 84 85 89 98 97 92 93,94,95,96 86 88 87 64 31 v dd v ss n.c. dqa 0 ~a 7 dqb 0 ~b 7 dqc 0 ~c 7 dqd 0 ~d 7 dqpa~p d /nc v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,41,65,91 17,40,67,90 14,16,38,39,42,66 52,53,56,57,58,59,62,63 68,69,72,73,74,75,78,79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) dqpc/nc dqc 0 dqc 1 v ddq v ssq dqc 2 dqc 3 dqc 4 dqc 5 v ssq v ddq dqc 6 dqc 7 n.c. v dd n.c. v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 dqpd/nc 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 dqpb/nc dqb 7 dqb 6 v ddq v ssq dqb 5 dqb 4 dqb 3 dqb 2 v ssq v ddq dqb 1 dqb 0 v ss n.c. v dd zz dqa 7 dqa 6 v ddq v ssq dqa 5 dqa 4 dqa 3 dqa 2 v ssq v ddq dqa 1 dqa 0 dqpa/nc 1 0 0 9 9 9 8 9 7 9 6 9 5 9 4 9 3 9 2 9 1 9 0 8 9 8 8 8 7 8 6 8 5 8 4 8 3 8 2 a 6 a 7 c s 1 c s 2 w e d w e c w e b w e a c s 2 v d d v s s c l k g w b w o e a d s c a d s p a d v a 8 8 1 a 9 5 0 4 9 4 8 4 7 4 6 4 5 4 4 4 3 4 2 4 1 4 0 3 9 3 8 3 7 3 6 3 5 3 4 3 3 3 2 a 1 5 a 1 4 a 1 3 a 1 2 a 1 1 a 1 0 a 1 7 n . c . v d d v s s n . c . n . c . a 0 a 1 a 2 a 3 a 4 a 5 3 1 l b o a 1 6 k7a803601b(256kx36) k7a803201b(256kx32)
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 5 - rev 1.0 nov 2001 k7a803201b k7a803601b pin configuration (top view) pin name note : 1. a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. 2. the pin 42 is reserved for address bit for the 16mb . symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 18 adv adsp adsc clk cs 1 cs 2 cs 2 we x oe gw bw zz lbo address inputs burst address advance address status processor address status controller clock chip select chip select chip select byte write inputs output enable global write enable byte write enable power down input burst mode control 32,33,34,35,36,37,43 44,45,46,47,48,49,50 80,81,82,99,100 83 84 85 89 98 97 92 93,94 86 88 87 64 31 v dd v ss n.c. dqa 0 ~ a 7 dqb 0 ~ b 7 dqpa, pb v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,41,65,91 17,40,67,90 1,2,3,6,7,14,16,25,28,29, 30,38,39,42,51,52,53,56, 57,66,75,78,79,95,96 58,59,62,63,68,69,72,73 8,9,12,13,18,19,22,23 74,24 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) n.c. n.c. n.c. v ddq v ssq n.c. n.c. dqb 0 dqb 1 v ssq v ddq dqb 2 dqb 3 n.c. v dd n.c. v ss dqb 4 dqb 5 v ddq v ssq dqb 6 dqb 7 dqpb n.c. v ssq v ddq n.c. n.c. n.c. 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 n.c. n.c. v ddq v ssq n.c. dqpa dqa 7 dqa 6 v ssq v ddq dqa 5 dqa 4 v ss n.c. v dd zz dqa 3 dqa 2 v ddq v ssq dqa 1 dqa 0 n.c. n.c. v ssq v ddq n.c. n.c. n.c. 1 0 0 9 9 9 8 9 7 9 6 9 5 9 4 9 3 9 2 9 1 9 0 8 9 8 8 8 7 8 6 8 5 8 4 8 3 8 2 a 6 a 7 c s 1 c s 2 n . c . n . c . w e b w e a c s 2 v d d v s s c l k g w b w o e a d s c a d s p a d v a 8 8 1 a 9 5 0 4 9 4 8 4 7 4 6 4 5 4 4 4 3 4 2 4 1 4 0 3 9 3 8 3 7 3 6 3 5 3 4 3 3 3 2 a 1 5 a 1 4 a 1 3 a 1 2 a 1 1 a 1 8 n . c . v d d v s s n . c . n . c . a 0 a 1 a 2 a 3 a 4 a 5 3 1 l b o a 1 6 k7a801801b(512kx18) a 1 7 a 10
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 6 - rev 1.0 nov 2001 k7a803201b k7a803601b function description the k7a803601b, k7a803201b and k7a801801b are synchronous sram designed to support the burst address accessing sequence of the power pc based microprocessor. all inputs (with the exception of oe , lbo and zz) are sampled on rising clock edges. the start and duration of the burst access is controlled by adsc , adsp and adv and chip select pins. the accesses are enabled with the chip select signals and output enabled signals. wait states are inserted into the access with adv . when zz is pulled high, the sram will enter a power down state. at this time, internal state of the sram is preserved. when zz returns to low, the sram normally operates after 2cycles of wake up time. zz pin is pulled down internally. read cycles are initiated with adsp (regardless of we x and adsc )using the new external address clocked into the on-chip address register whenever adsp is sampled low, the chip selects are sampled active, and the output buffer is enabled with oe . in read oper- ation the data of cell array accessed by the current address, registered in the data-out registers by the positive edge of clk, are car- ried to the data-out buffer by the next positive edge of clk. the data, registered in the data-out buffer, are projected to the output pins. adv is ignored on the clock edge that samples adsp asserted, but is sampled on the subsequent clock edges. the address increases internally for the next access of the burst when we x are sampled high and adv is sampled low. and adsp is blocked to control signals by disabling cs 1 . all byte write is done by gw (regaedless of bw and we x.), and each byte write is performed by the combination of bw and we x when gw is high. write cycles are performed by disabling the output buffers with oe and asserting we x. we x are ignored on the clock edge that sam- ples adsp low, but are sampled on the subsequent clock edges. the output buffers are disabled when we x are sampled low(regaedless of oe ). data is clocked into the data input register when we x sampled low. the address increases internally to the next address of burst, if both we x and adv are sampled low. individual byte write cycles are performed by any one or more byte write enable signals( we a, we b, we c or we d) sampled low. the we a control dqa 0 ~ dqa 7 and dqpa, we b controls dqb 0 ~ dqb 7 and dqpb, we c controls dqc 0 ~ dqc 7 and dqpc, and we d control dqd 0 ~ dqd 7 and dqpd. read or write cycle may also be initi- ated with adsc , instead of adsp . the differences between cycles initiated with adsc and adsp as are follows; adsp must be sampled high when adsc is sampled low to initiate a cycle with adsc . we x are sampled on the same clock edge that sampled adsc low(and adsp high). addresses are generated for the burst access as shown below, the starting point of the burst sequence is provided by the externa l address. the burst address counter wraps around to its initial state upon completion. the burst sequence is determined by the st ate of the lbo pin. when this pin is low, linear burst sequence is selected. when this pin is high, interleaved burst sequence is selected. burst sequence table (interleaved burst) lbo pin high case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 0 1 1 1 0 1 0 1 1 0 0 0 1 0 1 1 1 0 0 1 0 1 0 bq table (linear burst) note : 1. lbo pin must be tied to high or low, and floating state must not be allowed . lbo pin low case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 1 1 0 1 0 1 0 1 1 0 0 0 1 0 1 1 0 0 1 1 0 1 0 asynchronous truth table operation zz oe i/o status sleep mode h x high-z read l l dq l h high-z write l x din, high-z deselected l x high-z notes 1. x means "don t care". 2. zz pin is pulled down internally 3. for write cycles that following read cycles, the output buffers must be disabled with oe , otherwise data bus contention will occur. 4. sleep mode means power down state of which stand-by current does not depend on cycle time. 5. deselected means power down state of which stand-by current depends on cycle time.
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 7 - rev 1.0 nov 2001 k7a803201b k7a803601b synchronous truth table notes : 1. x means "don t care". 2. the rising edge of clock is symbolized by - . 3. write = l means write operation in write truth table. write = h means read operation in write truth table. 4. operation finally depends on status of asynchronous input pins(zz and oe ). cs 1 cs 2 cs 2 adsp adsc adv write clk address accessed operation h x x x l x x - n/a not selected l l x l x x x - n/a not selected l x h l x x x - n/a not selected l l x x l x x - n/a not selected l x h x l x x - n/a not selected l h l l x x x - external address begin burst read cycle l h l h l x l - external address begin burst write cycle l h l h l x h - external address begin burst read cycle x x x h h l h - next address continue burst read cycle h x x x h l h - next address continue burst read cycle x x x h h l l - next address continue burst write cycle h x x x h l l - next address continue burst write cycle x x x h h h h - current address suspend burst read cycle h x x x h h h - current address suspend burst read cycle x x x h h h l - current address suspend burst write cycle h x x x h h l - current address suspend burst write cycle truth tables write truth table (x36/32) note : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( - ). gw bw we a we b we c we d operation h h x x x x read h l h h h h read h l l h h h write byte a h l h l h h write byte b h l h h l l write byte c and d h l l l l l write all bytes l x x x x x write all bytes write truth table (x18) note : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( - ). gw bw we a we b operation h h x x read h l h h read h l l h write byte a h l h l write byte b h l l l write all bytes l x x x write all bytes
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 8 - rev 1.0 nov 2001 k7a803201b k7a803601b capacitance* (t a =25 c, f=1mhz) *note : sampled not 100% tested. parameter symbol test condition min max unit input capacitance c in v in =0v - 5 pf output capacitance c out v out =0v - 7 pf operating conditions at 3.3v i/o (0 c t a 70 c) * the above parameters are also guaranteed at industrial temperature range. parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 3.135 3.3 3.465 v ground v ss 0 0 0 v operating conditions at 2.5v i/o (0 c t a 70 c) * the above parameters are also guaranteed at industrial temperature range. parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 2.375 2.5 2.9 v ground v ss 0 0 0 v absolute maximum ratings* *note : stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress r ating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. parameter symbol rating unit voltage on v dd supply relative to v ss v dd -0.3 to 4.6 v voltage on v ddq supply relative to v ss v ddq v dd v voltage on input pin relative to v ss v in -0.3 to v dd +0.3 v voltage on i/o pin relative to v ss v io -0.3 to v ddq +0.3 v power dissipation p d 1.6 w storage temperature t stg -65 to 150 c operating temperature commercial t opr 0 to 70 c industrial t opr -40 to 85 c storage temperature range under bias t bias -10 to 85 c
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 9 - rev 1.0 nov 2001 k7a803201b k7a803601b dc electrical characteristics (v dd =3.3v+0.165v/-0.165v , t a =0 c to +70 c) notes : 1. the above parameters are also guaranteed at industrial temperature range. 2. reference ac operating conditions and characteristics for input and timing. 3. data states are all zero. 4. in case of i/o pins, the max. v ih =v ddq +0.3v parameter symbol test conditions min max unit notes input leakage current(except zz) i il v dd =max ; v in =v ss to v dd -2 +2 m a output leakage current i ol output disabled, v out =v ss to v ddq -2 +2 m a operating current i cc device selected, i out =0ma, zz v il , cycle time 3 t cyc min -16 - 350 ma 1,2 -14 - 300 standby current i sb device deselected, i out =0ma, zz v il , f=max, all inputs 0.2v or 3 v dd -0.2v -16 - 130 ma -14 - 120 i sb1 device deselected, i out =0ma, zz 0.2v, f =0, all inputs=fixed (v dd -0.2v or 0.2v) - 100 ma i sb2 device deselected, i out =0ma, zz 3 v dd -0.2v, f=max, all inputs v il or 3 v ih - 60 ma output low voltage(3.3v i/o) v ol i ol =8.0ma - 0.4 v output high voltage(3.3v i/o) v oh i oh =-4.0ma 2.4 - v output low voltage(2.5v i/o) v ol i ol =1.0ma - 0.4 v output high voltage(2.5v i/o) v oh i oh =-1.0ma 2.0 - v input low voltage(3.3v i/o) v il -0.3* 0.8 v input high voltage(3.3v i/o) v ih 2.0 v dd +0.3** v 3 input low voltage(2.5v i/o) v il -0.3* 0.7 v input high voltage(2.5v i/o) v ih 1.7 v dd +0.3** v 3 v ss v ih v ss- 1.0v 20% t cyc (min) (v dd =3.3v+0.165v/-0.165v , v ddq =3.3v+0.165/-0.165v or v dd =3.3v+0.165v/-0.165v , v ddq =2.5v+0.4v/-0.125v, t a =0to70 c) test conditions * the above parameters are also guaranteed at industrial temperature range. parameter value input pulse level(for 3.3v i/o) 0 to 3.0v input pulse level(for 2.5v i/o) 0 to 2.5v input rise and fall time(measured at 20% to 80% for 3.3v i/o) 1.0v/ns input rise and fall time(measured at 20% to 80% for 2.5v i/o) 1.0v/ns input and output timing reference levels for 3.3v i/o 1.5v input and output timing reference levels for 2.5v i/o v ddq /2 output load see fig. 1
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 10 - rev 1.0 nov 2001 k7a803201b k7a803601b ac timing characteristics (v dd =3.3v+0.165v/-0.165v , t a =0 c to +70 c) notes : 1. the above parameters are also guaranteed at industrial temperature range. 2. all address inputs must meet the specified setup and hold times for all rising clock edges whenever adsc and/or adsp is sampled low and cs is sampled low. all other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected . 3. both chip selects must be active whenever adsc or adsp is sampled low in order for the this device to remain enabled. 4. adsc or adsp must not be asserted for at least 2 clock after leaving zz state. 5. at any given voltage and temperature, t hzc is less than t lzc parameter symbol -16 -14 unit min max min max cycle time tcyc 6.0 - 7.2 - ns clock access time tcd - 3.5 - 4.0 ns output enable to data valid toe - 3.5 - 4.0 ns clock high to output low-z tlzc 0 - 0 - ns output hold from clock high toh 1.5 - 1.5 - ns output enable low to output low-z tlzoe 0 - 0 - ns output enable high to output high-z thzoe - 3.0 - 3.5 ns clock high to output high-z thzc 1.5 3.0 1.5 3.5 ns clock high pulse width tch 2.3 - 2.5 - ns clock low pulse width tcl 2.3 - 2.5 - ns address setup to clock high tas 1.5 - 1.5 - ns address status setup to clock high tss 1.5 - 1.5 - ns data setup to clock high tds 1.5 - 1.5 - ns write setup to clock high ( gw , bw , we x) tws 1.5 - 1.5 - ns address advance setup to clock high tadvs 1.5 - 1.5 - ns chip select setup to clock high tcss 1.5 - 1.5 - ns address hold from clock high tah 0.5 - 0.5 - ns address status hold from clock high tsh 0.5 - 0.5 - ns data hold from clock high tdh 0.5 - 0.5 - ns write hold from clock high ( gw , bw , we x) twh 0.5 - 0.5 - ns address advance hold from clock high tadvh 0.5 - 0.5 - ns chip select hold from clock high tcsh 0.5 - 0.5 - ns zz high to power down tpds 2 - 2 - cycle zz low to power up tpus 2 - 2 - cycle output load(b), (for t lzc , t lzoe , t hzoe & t hzc ) dout 353 w / 1538 w 5pf* +3.3v for 3.3v i/o 319 w / 1667 w fig. 1 * including scope and jig capacitance output load(a) dout zo=50 w rl=50 w vl=1.5v for 3.3v i/o v ddq /2 for 2.5v i/o /+2.5v for 2.5v i/o 30pf*
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 11 - rev 1.0 nov 2001 k7a803201b k7a803601b c l o c k a d s p a d s c a d d r e s s w r i t e c s a d v o e d a t a o u t t i m i n g w a v e f o r m o f r e a d c y c l e n o t e s : w r i t e = l m e a n s g w = l , o r g w = h , b w = l , w e x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l t c h t c l t s s t s h t s s t s h t a s t a h a 1 a 2 a 3 b u r s t c o n t i n u e d w i t h n e w b a s e a d d r e s s t w s t w h t c s s t c s h t a d v s t a d v h t o e t h z o e t l z o e t c d t o h ( a d v i n s e r t s w a i t s t a t e ) t h z c q 3 - 4 q 3 - 3 q 3 - 2 q 3 - 1 q 2 - 4 q 2 - 3 q 2 - 2 q 2 - 1 q 1 - 1 d o n t c a r e u n d e f i n e d t c y c
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 12 - rev 1.0 nov 2001 k7a803201b k7a803601b t i m i n g w a v e f o r m o f w r t e c y c l e c l o c k a d s p a d s c a d d r e s s w r i t e c s a d v d a t a i n t c h t c l t s s t s h t a s t a h a 1 a 2 a 3 ( a d s c e x t e n d e d b u r s t ) t h z o e d 2 - 1 d 1 - 1 t c s s t c s h ( a d v s u s p e n d s b u r s t ) d 2 - 2 d 2 - 3 d 2 - 4 d 3 - 1 d 3 - 2 d 3 - 3 d 2 - 2 d 3 - 4 q 0 - 3 q 0 - 4 o e d a t a o u t t s s t s h t w s t w h t a d v s t a d v h t d s t d h d o n t c a r e u n d e f i n e d t c y c
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 13 - rev 1.0 nov 2001 k7a803201b k7a803601b t i m i n g w a v e f o r m o f c o m b i n a t i o n r e a d / w r t e c y c l e ( a d s p c o n t r o l l e d , a d s c = h i g h ) c l o c k a d s p a d d r e s s w r i t e c s a d v o e d a t a o u t t c h t c l t d s t d h q 3 - 2 d a t a i n t o h a 1 a 2 a 3 d 2 - 1 q 3 - 1 q 3 - 3 t s s t s h t a s t a h t w s t w h t a d v s t a d v h t l z o e t h z o e t c d t h z c q 3 - 4 t l z c q 1 - 1 d o n t c a r e u n d e f i n e d t c y c
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 14 - rev 1.0 nov 2001 k7a803201b k7a803601b t i m i n g w a v e f o r m o f s i n g l e r e a d / w r i t e c y c l e ( a d s c c o n t r o l l e d , a d s p = h i g h ) c l o c k a d s c a d d r e s s w r i t e c s a d v o e d a t a i n t c h t c l t h z o e d 6 - 1 d a t a o u t t w s t w h t l z o e t o h t o e d 5 - 1 d 7 - 1 t w s t w h t l z o e t d h t d s a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 q 3 - 1 q 1 - 1 q 2 - 1 q 4 - 1 q 8 - 1 t c s s t c s h t s s t s h q 9 - 1 d o n t c a r e u n d e f i n e d t c y c
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 15 - rev 1.0 nov 2001 k7a803201b k7a803601b t i m i n g w a v e f o r m o f p o w e r d o w n c y c l e c l o c k a d s p a d d r e s s w r i t e c s a d v d a t a i n t c h t c l d 2 - 2 o e t h z o e d 2 - 1 a 1 t s s t s h d a t a o u t t p u s a d s c z z t a s t a h t c s s t c s h s l e e p s t a t e n o r m a l o p e r a t i o n m o d e z z r e c o v e r y c y c l e a 2 t w s t w h t l z o e q 1 - 1 t o e t h z c t p d s z z s e t u p c y c l e d o n t c a r e u n d e f i n e d t c y c
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 16 - rev 1.0 nov 2001 k7a803201b k7a803601b application information the samsung 256kx36 synchronous pipelined burst sram has two additional chip selects for simple depth expansion. depth expansion this permits easy secondary cache upgrades from 256k depth to 512k depth without extra logic. data address clk ads cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 256kx36 spb sram (bank 0) cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 256kx36 spb sram (bank 1) clk address cache controller a [0:18] a [18] a [0:17] a [18] a [0:17] i/o [0:71] microprocessor clock adsp address data out oe data out write cs 1 a n+1* adv (bank 0) (bank 1) [0:n*] interleave read timing (refer to non-interleave write timing for interleave write timing) bank 0 is selected by cs 2 , and bank 1 deselected by cs 2 q1-1 q1-2 q1-4 q1-3 t ss t sh a1 q2-2 q2-4 q2-3 t ws t wh t advs t advh t oe t lzoe t hzc bank 0 is deselected by cs 2 , and bank 1 selected by cs 2 t css t csh t cd t lzc q2-1 a2 t as t ah don t care undefined ( adsp controlled , adsc =high) *notes : n = 14 32k depth , 15 64k depth 16 128k depth , 17 256k depth 18 512k depth
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 17 - rev 1.0 nov 2001 k7a803201b k7a803601b application information depth expansion data address clk ads microprocessor cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 512kx18 spb sram (bank 0) cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 512kx18 spb sram (bank 1) clk address cache controller a [0:19] a [19] a [0:18] a [19] a [0:18] i/o [0:71] the samsung 512kx18 synchronous pipelined burst sram has two additional chip selects for simple depth expansion. this permits easy secondary cache upgrades from 512k depth to 1m depth without extra logic. clock adsp address data out oe data out write cs 1 a n+1* adv (bank 0) (bank 1) [0:n*] interleave read timing (refer to non-interleave write timing for interleave write timing) bank 0 is selected by cs 2 , and bank 1 deselected by cs 2 q1-1 q1-2 q1-4 q1-3 t ss t sh a1 q2-2 q2-4 q2-3 t ws t wh t advs t advh t oe t lzoe t hzc bank 0 is deselected by cs 2 , and bank 1 selected by cs 2 t css t csh t cd t lzc q2-1 a2 t as t ah don t care undefined ( adsp controlled , adsc =high) *notes : n = 14 32k depth , 15 64k depth 16 128k depth , 17 256k depth 18 512k depth , 19 1m depth
k7a801801b 256kx36/x32 & 512kx18 synchronous sram - 18 - rev 1.0 nov 2001 k7a803201b k7a803601b package dimensions 0.10 max 0~8 22.00 0.30 20.00 0.20 16.00 0.30 14.00 0.20 1.40 0.10 1.60 max 0.05 min (0.58) 0.50 0.10 #1 (0.83) 0.50 0.10 100-tqfp-1420a 0.65 0.30 0.10 0.10 max + 0.10 - 0.05 0.127 units ; millimeters/inches

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