2sa1160 2004-07-07 1 toshiba transistor silicon pnp epitaxial type (pct process) 2sa1160 strobe flash applications medium power amplifier applications ? high dc current gain and excellent h fe linearity : h fe (1) = 140 to 600 (v ce = ? 1 v, i c = ? 0.5 a) : h fe (2) = 60 (min), 120 (typ.) (v ce = ? 1 v, i c = ? 4 a) ? low saturation voltage : v ce (sat) = ? 0.5 v (max) (i c = ? 2 a, i b = ? 50 ma) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo ? 20 v collector-emitter voltage v ceo ? 10 v emitter-base voltage v ebo ? 6 v dc i c ? 2 collector current pulsed (note 1) i cp ? 4 a base current i b ? 2 a collector power dissipation p c 900 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: pulse width = 10 ms (max), duty cycle = 30% (max) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = ? 20 v, i e = 0 ? ? ? 100 na emitter cut-off current i ebo v eb = ? 6 v, i c = 0 ? ? ? 100 na collector-emitter breakdown voltage v (br) ceo i c = ? 10 ma, i b = 0 ? 10 ? ? v emitter-base breakdown voltage v (br) ebo i e = ? 1 ma, i c = 0 ? 6 ? ? v dc current gain h fe (1) (note 2) v ce = ? 1 v, i c = ? 0.5 a 140 ? 600 collector-emitter saturation voltage h fe (2) v ce = ? 1 v, i c = ? 4 a 60 120 ? base-emitter saturation voltage v ce (sat) i c = ? 2 a, i b = ? 50 ma ? ? 0.20 ? 0.50 v base-emitter voltage v be v ce = ? 1 v, i c = ? 2 a ? ? 0.83 ? 1.5 v transition frequency f t v ce = ? 1 v, i c = ? 0.5 a ? 140 ? mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz ? 50 ? pf note 2: h fe (1) classification a: 140 to 280, b: 200 to 400, c: 300 to 600 unit: mm jedec to-92mod jeita D toshiba 2-5j1a weight: 0.36 g (typ.)
2sa1160 2004-07-07 2 marking a1160 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. characteristics indicator part no. (or abbreviation code)
2sa1160 2004-07-07 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) i c ? v be base-emitter voltage v be (v) dc current gain h fe collector current i c (a) h fe ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v ce (sat) ? i c collector current i c (a) collector-emitter voltage v ce (v) safe operating area ambient temperature ta (c) p c ? ta collector power dissipation p c (w) common emitter ta = 25c 0 0 ? 4 ? 1 i b = ? 1 ma ? 2 ? 3 ? 0.8 ? 1.6 ? 2.4 ? 50 0 ? 30 ? 20 ? 100 ? 4.0 ? 5 ? 10 ? 3 ? 2 ? 3.2 common emitter v ce = ? 1 v 0 0 ? 4 ? 1 ta = 100c ? 2 ? 3 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 2.0 25 ? 25 1.6 0 0 40 80 120 160 0.4 0.8 1.2 200 ? 0.01 3000 30 ta = 100c 100 300 1000 ? 0.03 ? 0.1 ? 0.3 ? 1 ? 3 25 ? 25 ? 5 common emitter v ce = ? 1 v * : single nonrepetitive pulse ta = 25c curves must be derated linearly with increase in temperature. ? 3 ? 0.05 ? 0.5 ? 0.1 ? 0.3 ? 0.1 ? 0. 3 ? 1 ? 3 ? 10 ? 30 v ceo max 10 ms * 100 ms * ? 1 ? 5 ? 10 i c max (continuous) i c max (pulsed) * dc operation ta = 25c ? 1 ? 0.01 ? 0.5 ? 0.03 ? 0.05 ? 0.1 ? 0.3 ? 0.01 ? 0.03 ? 0.1 ? 0.3 ? 1 ? 5 ta = 100c ? 25 25 common emitter i c /i b = 40 ? 3
2sa1160 2004-07-07 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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