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| Datasheet File OCR Text: |
| geometry process details principal device types cmlsh05-4 gross die per 4 inch wafer 28,028 process cpd96v schottky diode 500ma low v f schottky diode chip process epitaxial planar die size 20 x 20 mils die thickness 7.1 mils anode bonding pad area 16.4 x 16.4 mils top side metalization al - 20,000? back side metalization au - 12,000? www.centralsemi.com r5 (22-march 2010)
process cpd96v typical electrical characteristics www.centralsemi.com r5 (22-march 2010) |
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