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2006, 2007 features ? the device is an ideal choice fo r low noise, high-gain amplification nf = 0.6 db typ. @ v ce = 2 v, i c = 6 ma, f = 2.0 ghz ? maximum stable power gain: msg = 20.5 db typ. @ v ce = 2 v, i c = 15 ma, f = 2.0 ghz ? sige hbt technology (uhs3) adopted: f max = 110 ghz ? this product is improvem ent of esd of nesg3032m14. ? 4-pin lead-less minimold (m14, 1208 pkg) ordering information part number order number package quantity supplying form nesg3033m14 nesg3033m14-a 50 pcs (non reel) nesg3033m14-t3 nesg3033m14-t3-a 4-pin lead-less minimold (m14, 1208 pkg) (pb-free) note 10 kpcs/reel ? 8 mm wide embossed taping ? pin 1 (collector), pin 4 (emitter) face the perforation side of the tape note with regards to terminal solder (the solder contai ns lead) plated products (conv entionally plated), contact your nearby sales office. remark to order evaluation samples, contact your nearby sales office. unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo note 1 5.0 v collector to emitter voltage v ceo 4.3 v base current i b note 1 12 ma collector current i c 35 ma total power dissipation p tot note 2 150 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c notes 1. v cbo and i b are limited by the permissible cu rrent of the protection element. 2. mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pwb the mark shows major revised points. the revised points can be easily s earched by copying an "" in the pdf file and specifying it in the "find what:" field. data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. npn silicon germanium rf transistor nesg3033m14 npn sige rf transistor for low noise, high-gain amplification 4-pin lead-less minimold (m14, 1208 pkg) document no. pu10640ej02v0ds (2nd edition) date published may 2007 ns printed in japan
recommended operating range (t a = +25 c) parameter symbol min. typ. max. unit input power p in ? ? 0 dbm base feedback resister r b ? ? 100 k remark when the voltage return bias circuit like the figure below is used, a current increase is seen because the esd protection element is turned on when recommended range of motion in the above table is exceeded. however, there is no influence of reliability, including deterioration. r b bias choke data sheet pu10640ej02v0ds 2 nesg3033m14
electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ma ? ? 100 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ma ? ? 100 na dc current gain h fe note 1 v ce = 2 v, i c = 6 ma 220 300 380 ? rf characteristics insertion power gain ? s 21e ? 2 v ce = 2 v, i c = 15 ma, f = 2.0 ghz 15.0 17.5 ? db noise figure nf v ce = 2 v, i c = 6 ma, f = 2.0 ghz, z s = z sopt , z l = z lopt ? 0.60 0.85 db associated gain g a v ce = 2 v, i c = 6 ma, f = 2.0 ghz, z s = z sopt , z l = z lopt ? 17.5 ? db reverse transfer capacitance c re note 2 v cb = 2 v, i e = 0 ma, f = 1 mhz ? 0.15 0.25 pf maximum stable power gain msg note 3 v ce = 2 v, i c = 15 ma, f = 2.0 ghz 17.5 20.5 ? db gain 1 db compression output power p o (1 db) v ce = 3 v, i c (set) = 20 ma, f = 2.0 ghz, z s = z sopt , z l = z lopt ? 12.5 ? dbm 3rd order intermodulation distortion output intercept point oip 3 v ce = 3 v, i c (set) = 20 ma, f = 2.0 ghz, z s = z sopt , z l = z lopt ? 24.0 ? dbm notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacit ance when the emitter grounded 3. msg = h fe classification rank fb marking zl h fe value 220 to 380 s 21 s 12 data sheet pu10640ej02v0ds 3 nesg3033m14
typical characteristics (t a = +25 c, unless otherwise specified) 250 200 150 100 50 0 25 50 75 100 125 150 f = 1 mhz 0.3 0.2 0.1 012345 v ce = 1 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 3 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 2 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 35 i b = 20 a 120 a 200 a 140 a 160 a 180 a 80 a 60 a 40 a 100 a 40 20 25 30 15 5 10 012345 mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage collector current i c (ma) base to emitter voltage v be (v) base to emitter voltage collector current vs. collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage remark the graphs indicate nominal characteristics. data sheet pu10640ej02v0ds 4 nesg3033m14
1 000 100 10 1 0.1 10 100 v ce = 1 v 1 000 100 10 1 0.1 10 100 v ce = 3 v 1 000 100 10 1 0.1 10 100 v ce = 2 v dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current remark the graphs indicate nominal characteristics. data sheet pu10640ej02v0ds 5 nesg3033m14
v ce = 3 v f = 2 ghz 30 5 10 15 20 25 0 10 1 100 v ce = 1 v i c = 15 ma 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 v ce = 3 v i c = 15 ma 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 v ce = 2 v i c = 15 ma 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 msg mag msg mag msg mag gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) v ce = 1 v f = 2 ghz 30 5 10 15 20 25 0 10 1 100 v ce = 2 v f = 2 ghz 30 5 10 15 20 25 0 10 1 100 remark the graphs indicate nominal characteristics. data sheet pu10640ej02v0ds 6 nesg3033m14
v ce = 1 v f = 3 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) collector current i c (ma) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) maximum stable power gain msg (db) insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) insertion power gain, mag, msg vs. collector current collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) v ce = 1 v f = 0.5 ghz msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 1 v f = 2 ghz mag msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 1 v f = 1 ghz mag msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 2 v f = 0.5 ghz msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 1 v f = 5 ghz 25 20 15 10 5 0 ?5 1 10 100 mag |s 21e | 2 remark the graphs indicate nominal characteristics. data sheet pu10640ej02v0ds 7 nesg3033m14
v ce = 3 v f = 0.5 ghz msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum stable power gain msg (db) v ce = 2 v f = 1 ghz msg |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 3 v f = 1 ghz |s 21e | 2 msg 30 25 20 15 10 5 0 1 10 100 v ce = 2 v f = 5 ghz mag |s 21e | 2 30 25 20 15 10 5 0 1 10 100 v ce = 2 v f = 2 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg v ce = 2 v f = 3 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg remark the graphs indicate nominal characteristics. data sheet pu10640ej02v0ds 8 nesg3033m14
collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) v ce = 3 v f = 3 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg v ce = 3 v f = 5 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag v ce = 3 v f = 2 ghz |s 21e | 2 30 25 20 15 10 5 0 1 10 100 mag msg remark the graphs indicate nominal characteristics. data sheet pu10640ej02v0ds 9 nesg3033m14
20 15 10 5 0 ?5 50 40 10 20 30 0 ?20 ?10 ?5 0 ?15 5 p out i c v ce = 3 v, f = 2 ghz i cq = 20 ma (rf off) input power p in (dbm) output power, collector current vs. input power output power p out (dbm) collector current i c (ma) measuring method : measured at power matched with external sleeve tuner. (the load resistance is not inserted between the base dc power supply and bias tee.) collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) 4 2 1 3 0 20 5 10 15 0 1 10 100 v ce = 2 v f = 2 ghz g a nf remark the graphs indicate nominal characteristics. s-parameters s-parameters/noise parameters are provided on our web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.ncsd.necel.com/microwave/index.html data sheet pu10640ej02v0ds 10 nesg3033m14
evaluation circuit example (f = 1.575 ghz lna) c1 c3 r1 l1 r3 c4 r2 l2 c2 tr. (nesg3033m14) gnd v cc nesg3033m14 gps_lna in notes 1. 15 24 mm, t = 0.2 mm double sided copper clad glass epoxy pwb. 2. au plated on pattern 3. : through holes data sheet pu10640ej02v0ds 11 nesg3033m14
evaluation circuit (f = 1.575 ghz lna) in c3 l1 out c2 v cc l2 c4 c1 r1 27 pf 5.6 nh 82 k 1 000 pf r3 3.9 nh r2 100 5.1 3 v 1 000 pf 6 pf microstrip w = 0.15 mm l = 0.5 mm 2 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. component list symbol parts part number maker value c1 chip capacitor grm1552c1h270jz01 murata 27 pf c2 chip capacitor grm1552c1h6r0jz01 murata 6 pf c3, c4 chip capacitor grm155b11h102ka01 murata 1 000 pf l1 chip inductor aml1005h5n6sts fdk 5.6 nh l2 chip inductor aml1005h3n9sts fdk 3.9 nh r1 chip resistor mcr01mzpj823 rohm 82 k r2 chip resistor mcr01mzpj5r1 rohm 5.1 r3 chip resistor mcr01mzpj101 rohm 100 data sheet pu10640ej02v0ds 12 nesg3033m14
example of characteristics for 1.575 ghz lna evaluation board electrical characteristics (t a = +25 c, v cc = 3 v, i c = 6.1 ma, f = 1.575 ghz) parameter symbol value unit noise figure nf 0.65 db gain g a 17.4 db input return loss rl in 10.1 db output return loss rl out 14.4 db gain 1 db compression output power p o (1 db) 0.7 dbm typical characteristics (t a = +25 c, unless otherwise specified) v cc = 3 v, f = 1.575 ghz i cq = 6 ma (rf off) 15 10 5 0 ?5 ?10 25 20 5 10 15 0 ?25 ?10 ?5 0 ?15 5 p out i c ?20 note input power p in (dbm) output power, collector current vs. input power output power p out (dbm) collector current i c (ma) note a current increase is seen because the esd protection element is turned on. however, there is no influence of deterioration etc. on reliability. remark the graph indicates nominal characteristics. data sheet pu10640ej02v0ds 13 nesg3033m14
package dimensions 4-pin lead-less minimold (m 14, 1208 pkg) (unit: mm) pin connections 1. collector 2. emitter 3. base 4. nc (connected with pin 2) note zl 0.50.05 0.11 +0.1 ?0.05 1.2 +0.07 ?0.05 0.8 0.8 +0.07 ?0.05 1.00.05 0.150.05 43 12 note a nc pin is non-connection in the mold package (w hen nc-pin is open state, it will get an influences of floating capacitance. theref ore, we recommend connect to nc pin and emitter pin). data sheet pu10640ej02v0ds 14 nesg3033m14
the information in this document is current as of may, 2007. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific": nesg3033m14

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