mitsubishi rf mosfet module ra 08n1317 m 135 - 175 mhz 8 w 9.6 v , 2 stage amp. for portable radio ra 08n1317 m mitsubishi electric 5 april 2004 1 / 9 electrostatic sensitive device observe handling precautions description the ra 08n1317 m is a 8 - watt rf mosfet amplifier module for 9.6 - volt portable radios that operate in the 135 - to 175 - mhz range. the battery can be connected directly to the drain of the enhancement - mode mosfet transistors. without the gate vo ltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal attenuates up to 60 db. the output power and drain current increase as the gate voltage increases. with a gate voltage around 2.5 v (minimum), output power and drain current increases substantially. the nominal output power becomes available at 3 v (typical) and 3. 5v (maximum). at v gg = 3. 5v, the typical gate current is 1 ma. this module is designed for non - linear fm modulation, but may also be used for linear modulati on by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. features ? enhancement - mode mosfet transistors (i dd @ 0 @ v dd = 9.6 v, v gg =0v) ? p out > 8 w @ v dd = 9.6 v, v gg = 3. 5v, p in = 2 0mw ? h t > 50 % @ p out = 8w (v gg control), v dd = 9.6 v, p in = 2 0mw ? broadband frequency range: 135 - 175 mhz ? low - power control current i gg = 1 ma (typ) at v gg = 3. 5v ? module size: 30 x 10 x 5.4 mm ? linear operation is possible by setting the quiescent drain current with the gate voltage a nd controlling the output power with the input power ordering information: order number supply form ra 08n1317 m - 01 antistatic tray, 25 modules/tray block diagram 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) 3 2 4 1 5 package code: h46s
mitsubishi rf power module ra 08n1317 m ra 08n1317 m mitsubishi electric 5 april 2004 2 / 9 electrostatic sensitive device observe handling precautions maximum ratings ( t case =+25 c , unless otherwise specified ) symbol parameter conditions rating unit v dd d rain voltage v gg =0 v , p in =0w 16 v v dd drain voltage v gg <3.5 v 13.2 v v gg gate voltage v dd <9.6 v, p in <2 0 m w 4 v p in input power 30 mw p out output power f= 135 - 175 mhz, z g =z l =50 w 10 w t case(op) operation case temperature range - 30 to + 90 c t stg storage te mperature range - 40 to +110 c the above parameters are independently guaranteed. electrical characteristics ( t case =+25 c , z g =z l =50 w , unless otherwise specified ) symbol parameter conditions min typ max unit f frequency range 135 175 mhz p out output p ower v dd = 9.6 v,v gg = 3.5 v , p in = 2 0mw 8 w h t total efficiency 50 % 2f o 2 nd harmonic - 25 dbc r in input vswr 4:1 ? i gg gate current p o ut =8w (v gg control), v dd =9.6v, p in =20mw 1 ma ? stability v dd =4. 8 - 13.2 v , p in =10 - 30mw, p o ut <8w (v gg c ontrol) , loa d vswr=4:1 no parasitic oscillation ? ? load vswr tolerance v dd = 13 .2v, p in = 2 0mw, p out = 8 w (v gg c ontrol), l oad vswr =20:1 no degradation or destroy ? all parameters, conditions, ratings, and limits are subject to change without notice.
mitsubishi rf power module ra 08n1317 m ra 08n1317 m mitsubishi electric 5 april 2004 3 / 9 electrostatic sensitive device observe handling precautions output power, total efficiency, 2 nd , 3 rd harmonics versus frequency and input vswr versus frequency output power, power gain and output power, power gain and drain current versus input power drain current versus input power 0 2 4 6 8 10 12 14 130 140 150 160 170 180 frequency f(mhz) output power p out (w) input vswr r in (-) 0 20 40 60 80 100 120 140 total efficiency h t (%) v dd =9.6v p in =20mw p out @v gg =3.5v h t @p out =8w r in @p out =8w 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 1 2 3 4 5 drain current i dd (a) f=135mhz, v dd =9.6v, v gg =3.5v p out i dd gp 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 1 2 3 4 5 drain current i dd (a) f=160mhz, v dd =9.6v, v gg =3.5v p out gp i dd -70 -60 -50 -40 -30 -20 130 140 150 160 170 180 frequency f(mhz) harmonics (dbc) v dd =9.6v p in =20mw 2 nd @p out =8w 3 rd @p out =8w output power, power gain and drain current versus input power output power and drain current output power and drain current versus drain voltage versus drain voltage 0 5 10 15 20 25 2 4 6 8 10 12 drain voltage v dd (v) output power p out (w) 0 1 2 3 4 5 drain current i dd (a) p out f=135mhz, v gg =3.5v, p in =20mw i dd 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 1 2 3 4 5 drain current i dd (a) f=175mhz, v dd =9.6v, v gg =3.5v p out gp i dd 0 5 10 15 20 25 2 4 6 8 10 12 drain voltage v dd (v) output power p out (w) 0 1 2 3 4 5 drain current i dd (a) p out f=160mhz, v gg =3.5v, p in =20mw i dd typical performance ( t case =+25c, z g =z l =50 w , unless otherwise specified )
mitsubishi rf power module ra 08n1317 m ra 08n1317 m mitsubishi electric 5 april 2004 4 / 9 electrostatic sensitive device observe handling precautions output power and drain current versus drain voltage output power and drain current output power and drain current versus gate voltage versus gate voltage output power and drain current versus gate voltage 0 2 4 6 8 10 12 14 1 1.5 2 2.5 3 3.5 4 gate voltage v gg (v) output power p out (w) 0 1 2 3 4 5 6 7 drain current i dd (a) p out f=135mhz, v dd =9.6v, p in =20mw i dd 0 5 10 15 20 25 2 4 6 8 10 12 drain voltage v dd (v) output power p out (w) 0 1 2 3 4 5 drain current i dd (a) p out f=175mhz, v gg =3.5v, p in =20mw i dd 0 2 4 6 8 10 12 14 1 1.5 2 2.5 3 3.5 4 gate voltage v gg (v) output power p out (w) 0 1 2 3 4 5 6 7 drain current i dd (a) p out f=160mhz, v dd =9.6v, p in =20mw i dd 0 2 4 6 8 10 12 14 1 1.5 2 2.5 3 3.5 4 gate voltage v gg (v) output power p out (w) 0 1 2 3 4 5 6 7 drain current i dd (a) p out f=175mhz, v dd =9.6v, p in =20mw i dd typical performance ( t case =+25c, z g =z l =50 w , unless otherwise specified )
mitsubishi rf power module ra 08n1317 m ra 08n1317 m mitsubishi electric 5 april 2004 5 / 9 electrostatic sensitive device observe handling precautions outline drawing (mm) 1 rf i nput (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case) (4.4) 6.1 1 13.7 1 18.8 1 23.9 1 30.0 0.2 26.6 0.2 21.2 0.2 6.0 1 2.3 0.4 (1.7) 3.0 0.2 ?0.45 0.15 3.5 0.2 1.5 0.2 2 - r1.5 0.1 6.0 0.2 10.0 0.2 3 2 5 3.0 0. 2 4 6.0 0.2 7.4 0.2 1 (5.4) ( 1 9.2) 0 . 0 5 +0.04/ - 0
mitsubishi rf power module ra 08n1317 m ra 08n1317 m mitsubishi electric 5 april 2004 6 / 9 electrostatic sensitive device observe handling precautions 1 rf i nput (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case) c1, c2 : 4700pf, 22uf in parallel directional coupler attenuator power meter spectrum analyzer signal generator attenuator pre - amplifier power meter directional coupler dut 5 4 3 2 1 z g =50 w z l =50 w c1 c2 - + dc power supply v gg + - dc power supply v dd test block diagram attenuator equivalent circuit 2 3 1 5 4
mitsubishi rf power module ra 08n1317 m ra 08n1317 m mitsubishi electric 5 april 2004 7 / 9 electrostatic sensitive device observe handling precautions precautions, recommendations, and application information: construction: this mod ule consists of an alumina substrate soldered onto a copper flange. for mechanical protection, a plastic cap is attached with silicone. the mosfet transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. wire leads soldered onto the alumina substrate provide the dc and rf connection. following conditions must be avoided: a) bending forces on the alumina s ubstrate (for example, by driving screws or from fast thermal changes) b) mechanical stress on the w ire leads (for example, by first soldering then driving screws or by thermal expansion) c) d efluxing solvents reacting with the resin coating on the mosfet chips (for example, trichlorethylene) d) frequent on/off switching that causes thermal expansion of the resin e) esd, surge, overvoltage in combination with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages down to 1000v. appr opriate esd precautions are required. mounting: heat sink flatness must be less than 50 m (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). a thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature dif ference to the heat sink. the module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. m3 screws are recommended with a tightening torque of 0.4 to 0.6 nm. soldering and defluxing: this module is designed for manual soldering. the leads must be soldered after the module is screwed onto the heat sink. the soldering temperature must be lower than 260c for a maximum of 10 seconds, or lower than 350c for a maximum of three seconds. ethyl alcohol is recommend for removing flux. trichlorethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). thermal design of the heat sink: at p out = 8 w, v dd = 9.6 v and p in = 2 0mw each stage transistor operat ing conditions are : stage p in (w) p out (w) r th(ch - case) (c/w) i dd @ h t = 50 % (a) v dd (v) 1 st 0.0 2 1.5 4.0 0. 28 2 nd 1.5 8.0 2.4 1.38 9.6 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch - case) are: t ch1 = t case + ( 9.6 v x 0. 28 a ? 1.5 w + 0.0 2 w) x 4.0 c/w = t case + 4.8 c t ch2 = t case + ( 9.6 v x 1.38 a ? 8.0 w + 1.5 w) x 2.4 c/w = t case + 16.2 c for long - term reliability, it is best to keep the module case temperature (t case ) below 90c. for an ambient temperatur e t air =60c and p out = 8 w , the required thermal resistance r th (case - air) = ( t case - t air ) / ( (p out / h t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case - air) = (90c - 60c) / ( 8 w/ 50 % ? 8 w + 0.0 2 w) = 3.74 c/w when mounti ng the module with the thermal resistance of 3.74 c/w, the channel temperature of each stage transistor is: t ch1 = t air + 34.8 c t ch2 = t air + 46.2 c the 175c maximum rating for the channel temperature ensures application under derated conditions.
mitsubishi rf power module ra 08n1317 m ra 08n1317 m mitsubishi electric 5 april 2004 8 / 9 electrostatic sensitive device observe handling precautions output power control: depending on linearity, the following two methods are recommended to control the output power: a) non - linear fm modulation: by the gate voltage (v gg ). when the gate voltage is close to zero, the rf input signal is attenuated up to 60 db and only a small leakage current flows from the battery into the drain. around v gg = 2.5 v, the output power and drain current increases substantially. around v gg = 3 v (typical) to v gg = 3. 5v (maximum), the nominal output power becomes available. b) linear am modulation: by rf input power p in . the gate voltage is used to set the drain?s quiescent current for the required linearity. oscillation: to test rf characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain , a 4.700 pf chip capacitor, located close to the module, and a 22 f (or more) electrolytic capacitor. when an amplifier circuit around this module shows oscillation, the following may be checked: a) do the bias decoupling capacitors have a low inductance pass to the case of the module? b) is the load impedance z l =50 w ? c) is the source impedance z g =50 w ? frequent on/off switching: in base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can res ult in reduced or no output power. the bond wires in the resin will break after long - term thermally induced mechanical stress. quality: mitsubishi electric is not liable for failures resulting from base station operation time or operating conditions exce eding those of mobile radios. this module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. currently, most returned modules show failures such as esd, substrate crack, and transistor burnout, whic h are caused by improper handling or exceeding recommended operating conditions. few degradation failures are found. mitsubishi electric corporation puts the maximum effort into mak ing semiconductor products better and more reliable, but there is always the possibility that trouble may occur. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material, or (iii) prevention against any malfunction or mishap. keep safety first in your circuit designs!
ra 08n1317 m mitsubishi electric 5 april 2004 9 / 9 sales contact japan: mitsubishi electric corporation semiconductor sales promotion department 2 - 2 - 3 marunouchi, chiyoda - ku tokyo, japan 100 email: sod.sophp@hq.melco.co.jp phone: +81 - 3 - 3218 - 4854 fax: +81 - 3 - 3218 - 4861 germany: mitsubishi electric europe b.v. semiconductor gothaer strasse 8 d - 40880 ratingen, germany email: semis.info@meg.mee.com phone: +49 - 2102 - 486 - 0 fax: +49 - 2102 - 486 - 4140 hong kong: mitsubishi electric hong kong ltd. semiconductor division 41/f. manulife tower, 169 electric road north point, hong kong email: scdinfo@mehk.com phone: +852 2510 - 0555 fax: +852 2510 - 9822 france: mitsubishi electric europe b.v. semiconductor 25 boule vard des bouvets f - 92741 nanterre cedex, france email: semis.info@meg.mee.com phone: +33 - 1 - 55685 - 668 fax: +33 - 1 - 55685 - 739 singapore: mitsubishi electric asia pte ltd semiconductor division 307 alexandra road #3 - 01/02 mitsubishi electric building, singapor e 159943 email: semicon@asia.meap.com phone: +65 64 732 308 fax: +65 64 738 984 italy: mitsubishi electric europe b.v. semiconductor centro direzionale colleoni, palazzo perseo 2, via paracelso i - 20041 agrate brianza, milano, italy email: semis.info@meg.me e.com phone: +39 - 039 - 6053 - 10 fax: +39 - 039 - 6053 - 212 taiwan: mitsubishi electric taiwan company, ltd., semiconductor department 9f, no. 88, sec. 6 chung shan n. road taipei, taiwan, r.o.c. email: metwnssi@metwn.meap.com phone: +886 - 2 - 2836 - 5288 fax: +886 - 2 - 2 833 - 9793 u.k.: mitsubishi electric europe b.v. semiconductor travellers lane, hatfield hertfordshire, al10 8xb, england email: semis.info@meuk.mee.com phone: +44 - 1707 - 278 - 900 fax: +44 - 1707 - 278 - 837 u.s.a.: mitsubishi electric & electronics usa, inc. electr onic device group 1050 east arques avenue sunnyvale, ca 94085 email: customerservice@edg.mea.com phone: 408 - 730 - 5900 fax: 408 - 737 - 1129 canada: mitsubishi electric sales canada, inc. 4299 14th avenue markham, ontario, canada l3r oj2 phone: 905 - 475 - 77 28 fax: 905 - 475 - 1918 australia: mitsubishi electric australia, semiconductor division 348 victoria road rydalmere, nsw 2116 sydney, australia email: semis@meaust.meap.com phone: +61 2 9684 - 7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 fax: +61 2 9684 - 7208 +61 2 9684 7245
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