1 nov-03-1997 bsm 111 ar simopac ? module ? single switch power mosfet module ? n channel, enhancement mode ? avalanche rated ? package with insulated metal base plate ? built in gate series resistor type v ds i d r ds(on) max package ordering code bsm 111 ar 100 v 200 a 0.0085 w ssw mos 1 C67076-S1013-A20 maximum ratings parameter symbol values unit drain source voltage v ds 100 v drain-gate voltage r gs = 20 k w v dgr 100 gate source voltage v gs 20 continuous drain current t c = 25 c i d 200 a dc drain current, pulsed t c = 25 c i dpuls 600 power dissipation t c = 25 c p to t 700 w chip temperature t jmax 150 c storage temperature t stg -40 ... + 125 thermal resistance chip - case r thjc 0.18 k/w thermal resistance case - heat sink r thca 0.05 insulation test voltage, t = 1min v is 2.5 kv ac creepage distance, drain-source 16 mm clearance, drain-source 11 din humidity category, din 40 040 f din humidity category, din iec 68-1 40 / 125 / 56
2 nov-03-1997 bsm 111 ar electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) 2.1 3 4 v drain-source on-resistance v gs = 10 v, i d = 130 a r ds(on) - 0.007 0.0085 w zero gate voltage drain current v ds = 100 v, v gs = 0 v, t j = 25 c v ds = 100 v, v gs = 0 v, t j = 125 c i dss - - 300 50 1000 100 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na reverse diode inverse diode continuous forward current t c = 25 c i s - - 200 a inverse diode direct current,pulsed t c = 25 c i sm - - 600 inverse diode forward voltage v gs = 0 v, i f = 400 a v sd 0.65 1.2 1.4 v reverse recovery time v r = 30 v, i f = l s, d i f /d t = 100 a/s t rr - 350 - ns reverse recovery charge v r = 30 v, i f = l s, d i f /d t = 100 a/s q rr - 3.5 - c
3 nov-03-1997 bsm 111 ar electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = 130 a g fs 60 75 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 10 14 nf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 3 4.5 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 1.8 2.7 turn-on delay time v dd = 50 v, v gs = 10 v, i d = 130 a r gs = 3.3 w t d(on) - 280 - ns rise time v dd = 50 v, v gs = 10 v, i d = 130 a r gs = 3.3 w t r - 220 - turn-off delay time v dd = 50 v, v gs = 10 v, i d = 130 a r gs = 3.3 w t d(off) - 220 - fall time v dd = 50 v, v gs = 10 v, i d = 130 a r gs = 3.3 w t f - 60 -
4 nov-03-1997 bsm 111 ar power dissipation p tot = | ( t c ) parameter: t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 50 100 150 200 250 300 350 400 450 500 550 600 650 w 750 p tot drain current i d = | ( t c ) parameter: v gs 3 10 v , t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 160 180 a 220 i d safe operating area i d = | ( v ds ) parameter: single puls , t c = 25 c , t j 150 c 0 10 1 10 2 10 3 10 a i d 10 0 10 1 10 2 v v ds r ds(on) = v ds / i d dc 10 ms 1 ms 100 s t p = 62.0 s transient thermal impedance z th jc = | ( t p ) parameter: d = t p / t -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
5 nov-03-1997 bsm 111 ar typ. output characteristics i d = |( v ds ) parameter: t p = 80 s , t j = 25 c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v 8.0 v ds 0 50 100 150 200 250 300 350 a 450 i d v gs [v] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 8.0 i i 9.0 j j 10.0 k k 15.0 l p tot = 700 w l 20.0 gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v 4.6 v gs(th) -60 -20 20 60 100 c 160 t j 2% typ 98% typ. transfer characteristic i d = f ( v gs ) parameter: t p = 80 s, v ds = 25 v 0 1 2 3 4 5 v 7 v gs 0 20 40 60 80 100 120 140 160 a 200 i d forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s 0 10 1 10 2 10 3 10 a i f 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
6 nov-03-1997 bsm 111 ar drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = 130 a , v gs = 10 v -60 -20 20 60 100 c 160 t j 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 0.022 0.024 w 0.028 r ds (on) typ 98% drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 c 160 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 116 v 120 v (br)dss typ. gate charge v gs = | ( q gate ) parameter: i d puls = 300 a 0 100 200 300 400 500 600 700 nc 900 q gate 0 2 4 6 8 10 12 v 16 v gs ds max v 0,8 ds max v 0,2 typ. capacitances c = f (v ds ) parameter: v gs = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ds -1 10 0 10 1 10 2 10 nf c c rss c oss c iss
7 nov-03-1997 bsm 111 ar circuit diagramm package outlines dimension in mm weight: 130 g
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