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rev.1.0 _01 ultra-small package high-precision voltage detector s-1000 series seiko instruments inc. 1 the s-1000 series is a seri es of high-precision voltage detectors developed using cmos process. the detection voltage is fixed internally with an accuracy of 1.0%. it operates with low current consumption of 350 na typ. two output forms, nch open-drain and cmos output, are available. cmos voltage detecto r, s-1000 series is the most suitable for the portable equipm ents with ultra low current consumption, high precision and corresponding to the small package. ? features ? ultra-low current consumption 350 na typ. (v dd = detection voltage + 1.5 v) ? high-precision detection voltage 1.0% ? operating voltage range 0.95 to 5.5 v ? hysteresis characteristics 5% typ. ? detection voltage 1.5 to 4.6 v (0.1 v step) ? output form nch open-drain output (active ?l?) cmos output (active ?l?) ? applications ? power monitor for microcomputers and reset for cpus. ? power monitor for portable equipments such as cellular phones, digital still cameras and pdas. ? constant voltage power monitor for came ras, video equipments and communication devices. ? packages package name drawing code package tape reel sc-82ab np004-a np004-a np004-a sot-23-5 mp005-a mp005-a mp005-a snt-4a pf004-a pf004-a pf004-a
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 2 seiko instruments inc. ? block diagrams 1. nch open-drain output products vss *1 *1 + ? out vdd v ref *1. parasitic diode figure 1 2. cmos output products *1 ? + out vss vdd *1 *1 v ref *1. parasitic diode figure 2
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 3 ? product name structure the detection voltage, output fo rm and packages for s-1000 series can be selected at the user's request. refer to the " 1. product name " for the construction of the product name and " 2. product name list " for the full product names. 1. product name 1. 1 sc-82ab, sot-23-5 packages s-1000 x xx - xxxx package name (abbreviation) and packing specifications *1 n4t1: sc-82ab, tape m5t1: sot-23-5, tape detection voltage value 15 ~ 46 (e.g. when the detection voltage is 1.5 v, it is expressed as 15.) output form n: nch open-drain output (active ?l?) c: cmos output (active ?l?) *1. refer to the taping specifications at the end of this book. 1. 2 snt-4a package s-1000 x xx - i4t1 g fixed package name (abbreviation) and packing specifications *1 i4t1: snt-4a, tape detection voltage value 15 ~ 46 (e.g. when the detection voltage is 1.5 v, it is expressed as 15.) output form n: nch open-drain output (active ?l?) c: cmos output (active ?l?) *1. refer to the taping specifications at the end of this book.
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 4 seiko instruments inc. 2. product name list 2. 1 nch open-drain output products table 1 detection voltage range sc-82ab sot-23-5 snt-4a 1.5 1.0% s-1000n15-n4t1 s-1000n15-m5t1 s-1000n15-i4t1g 1.6 1.0% s-1000n16-n4t1 s-1000n16-m5t1 s-1000n16-i4t1g 1.7 1.0% s-1000n17-n4t1 s-1000n17-m5t1 s-1000n17-i4t1g 1.8 1.0% s-1000n18-n4t1 s-1000n18-m5t1 s-1000n18-i4t1g 1.9 1.0% s-1000n19-n4t1 s-1000n19-m5t1 s-1000n19-i4t1g 2.0 1.0% s-1000n20-n4t1 s-1000n20-m5t1 s-1000n20-i4t1g 2.1 1.0% s-1000n21-n4t1 s-1000n21-m5t1 s-1000n21-i4t1g 2.2 1.0% s-1000n22-n4t1 s-1000n22-m5t1 s-1000n22-i4t1g 2.3 1.0% s-1000n23-n4t1 s-1000n23-m5t1 s-1000n23-i4t1g 2.4 1.0% s-1000n24-n4t1 s-1000n24-m5t1 s-1000n24-i4t1g 2.5 1.0% s-1000n25-n4t1 s-1000n25-m5t1 s-1000n25-i4t1g 2.6 1.0% s-1000n26-n4t1 s-1000n26-m5t1 s-1000n26-i4t1g 2.7 1.0% s-1000n27-n4t1 s-1000n27-m5t1 s-1000n27-i4t1g 2.8 1.0% s-1000n28-n4t1 s-1000n28-m5t1 s-1000n28-i4t1g 2.9 1.0% s-1000n29-n4t1 s-1000n29-m5t1 s-1000n29-i4t1g 3.0 1.0% s-1000n30-n4t1 s-1000n30-m5t1 s-1000n30-i4t1g 3.1 1.0% s-1000n31-n4t1 s-1000n31-m5t1 s-1000n31-i4t1g 3.2 1.0% s-1000n32-n4t1 s-1000n32-m5t1 s-1000n32-i4t1g 3.3 1.0% s-1000n33-n4t1 s-1000n33-m5t1 s-1000n33-i4t1g 3.4 1.0% s-1000n34-n4t1 s-1000n34-m5t1 s-1000n34-i4t1g 3.5 1.0% s-1000n35-n4t1 S-1000N35-M5T1 s-1000n35-i4t1g 3.6 1.0% s-1000n36-n4t1 s-1000n36-m5t1 s-1000n36-i4t1g 3.7 1.0% s-1000n37-n4t1 s-1000n37-m5t1 s-1000n37-i4t1g 3.8 1.0% s-1000n38-n4t1 s-1000n38-m5t1 s-1000n38-i4t1g 3.9 1.0% s-1000n39-n4t1 s-1000n39-m5t1 s-1000n39-i4t1g 4.0 1.0% s-1000n40-n4t1 s-1000n40-m5t1 s-1000n40-i4t1g 4.1 1.0% s-1000n41-n4t1 s-1000n41-m5t1 s-1000n41-i4t1g 4.2 1.0% s-1000n42-n4t1 s-1000n42-m5t1 s-1000n42-i4t1g 4.3 1.0% s-1000n43-n4t1 s-1000n43-m5t1 s-1000n43-i4t1g 4.4 1.0% s-1000n44-n4t1 s-1000n44-m5t1 s-1000n44-i4t1g 4.5 1.0% s-1000n45-n4t1 s-1000n45-m5t1 s-1000n45-i4t1g 4.6 1.0% s-1000n46-n4t1 s-1000n46-m5t1 s-1000n46-i4t1g
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 5 2. 2 cmos output products table 2 detection voltage range sc-82ab sot-23-5 snt-4a 1.5 1.0% s-1000c15-n4t1 s-1000c15-m5t1 s-1000c15-i4t1g 1.6 1.0% s-1000c16-n4t1 s-1000c16-m5t1 s-1000c16-i4t1g 1.7 1.0% s-1000c17-n4t1 s-1000c17-m5t1 s-1000c17-i4t1g 1.8 1.0% s-1000c18-n4t1 s-1000c18-m5t1 s-1000c18-i4t1g 1.9 1.0% s-1000c19-n4t1 s-1000c19-m5t1 s-1000c19-i4t1g 2.0 1.0% s-1000c20-n4t1 s-1000c20-m5t1 s-1000c20-i4t1g 2.1 1.0% s-1000c21-n4t1 s-1000c21-m5t1 s-1000c21-i4t1g 2.2 1.0% s-1000c22-n4t1 s-1000c22-m5t1 s-1000c22-i4t1g 2.3 1.0% s-1000c23-n4t1 s-1000c23-m5t1 s-1000c23-i4t1g 2.4 1.0% s-1000c24-n4t1 s-1000c24-m5t1 s-1000c24-i4t1g 2.5 1.0% s-1000c25-n4t1 s-1000c25-m5t1 s-1000c25-i4t1g 2.6 1.0% s-1000c26-n4t1 s-1000c26-m5t1 s-1000c26-i4t1g 2.7 1.0% s-1000c27-n4t1 s-1000c27-m5t1 s-1000c27-i4t1g 2.8 1.0% s-1000c28-n4t1 s-1000c28-m5t1 s-1000c28-i4t1g 2.9 1.0% s-1000c29-n4t1 s-1000c29-m5t1 s-1000c29-i4t1g 3.0 1.0% s-1000c30-n4t1 s-1000c30-m5t1 s-1000c30-i4t1g 3.1 1.0% s-1000c31-n4t1 s-1000c31-m5t1 s-1000c31-i4t1g 3.2 1.0% s-1000c32-n4t1 s-1000c32-m5t1 s-1000c32-i4t1g 3.3 1.0% s-1000c33-n4t1 s-1000c33-m5t1 s-1000c33-i4t1g 3.4 1.0% s-1000c34-n4t1 s-1000c34-m5t1 s-1000c34-i4t1g 3.5 1.0% s-1000c35-n4t1 s-1000c35-m5t1 s-1000c35-i4t1g 3.6 1.0% s-1000c36-n4t1 s-1000c36-m5t1 s-1000c36-i4t1g 3.7 1.0% s-1000c37-n4t1 s-1000c37-m5t1 s-1000c37-i4t1g 3.8 1.0% s-1000c38-n4t1 s-1000c38-m5t1 s-1000c38-i4t1g 3.9 1.0% s-1000c39-n4t1 s-1000c39-m5t1 s-1000c39-i4t1g 4.0 1.0% s-1000c40-n4t1 s-1000c40-m5t1 s-1000c40-i4t1g 4.1 1.0% s-1000c41-n4t1 s-1000c41-m5t1 s-1000c41-i4t1g 4.2 1.0% s-1000c42-n4t1 s-1000c42-m5t1 s-1000c42-i4t1g 4.3 1.0% s-1000c43-n4t1 s-1000c43-m5t1 s-1000c43-i4t1g 4.4 1.0% s-1000c44-n4t1 s-1000c44-m5t1 s-1000c44-i4t1g 4.5 1.0% s-1000c45-n4t1 s-1000c45-m5t1 s-1000c45-i4t1g 4.6 1.0% s-1000c46-n4t1 s-1000c46-m5t1 s-1000c46-i4t1g
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 6 seiko instruments inc. ? output forms 1. output forms in s-1000 series table 3 nch open-drain output products (active ?l?) cmos output products (active ?l?) s-1000 series ?n? is the last letter of the product name. e.g. s-1000n ?c? is the last letter of the product name. e.g. s-1000c 2. output form and their usage table 4 usage nch open-drain output products (active ?l?) cmos output products (active ?l?) different power supplies yes no active ?l? reset for cpus yes yes active ?h? reset for cpus no no detection voltage change by resistor divider yes no ? example for two power supplies ? example for one power supply v / d nch v / d nch v / d cmos cpu cpu cpu v dd1 v dd2 v dd v dd out out out v ss v ss v ss figure 3
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 7 ? pin configurations table 5 pin no. pin name pin description 1 out voltage detection output pin 2 vdd voltage input pin 3 nc *1 no connection 4 vss gnd pin 4 3 1 2 sc-82ab top view * 1. the nc pin is electrically open. the nc pin can be connected to vdd or vss. figure 4 table 6 pin no. pin name pin description 1 out voltage detection output pin 2 vdd voltage input pin 3 vss gnd pin 4 nc *1 no connection 5 nc *1 no connection sot-23-5 top view 5 4 3 2 1 * 1. the nc pin is electrically open. the nc pin can be connected to vdd or vss. figure 5 table 7 pin no. pin name pin description 1 out voltage detection output pin 2 vss gnd pin 3 nc *1 no connection 4 vdd voltage input pin snt-4a top view 1 4 2 3 * 1. the nc pin is electrically open. the nc pin can be connected to vdd or vss. figure 7
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 8 seiko instruments inc. ? absolute maximum ratings table 8 (ta = 25 c unless otherwise specified) item symbol absolute maximum ratings unit power supply voltage v dd ? v ss 6 v output voltage nch open-drain output products v out v ss ? 0.3 to v ss + 6 v cmos output products v ss ? 0.3 to v dd + 0.3 v output current i out 50 ma power dissipation p d sc-82ab 200 mw sot-23-5 300 mw snt-4a 300 *1 mw operating ambient temperature topr ? 40 to + 85 c storage temperature tstg ? 40 to + 125 c *1. at mounted on jedec high heat dissipation printed circuit board caution the absolute maximum ra tings are rated values exceeding whic h the product could suffer physical damage. these values must therefore not be exceeded under any conditions.
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 9 ? electrical characteristics 1. nch open-drain output products table 9 (ta = 25 c unless otherwise specified) item symbol condition min. typ. max. unit measure- ment circuit detection voltage *1 ? v det ? ? v det(s) 0.99 ? v det(s) ? v det(s) 1.01 v 1 hysteresis width v hys ? ? v det 0.03 ? v det 0.05 ? v det 0.07 v 1 current consumption i ss v dd = ? v det(s) + 1.5 v s-1000n15 to 39 ? 350 900 na 2 v dd = 5.5 v s-1000n40 to 46 ? 350 900 na 2 operating voltage v dd ? 0.95 ? 5.5 v 1 output current i out output transistor, nch, v ds = 0.5 v, v dd = 1.2 v 1.36 2.55 ? ma 3 leakage current i leak output transistor, nch, v ds = 5.5 v, v dd = 5.5 v ? ? 100 na 3 response time t plh ? ? ? 60 s 1 detection voltage temperature coefficient *2 ?? v det ? ta ?? v det ta = ? 40 to + 85 c ? 100 350 ppm / c 1 *1. ? v det : actual detection voltage value, ? v det(s) : specified detection voltage value (the center value of the detection voltage range in table 1, 2 .) *2. the temperature change ratio in the detection voltage [m v / c] is calculated by using the following equation. ?? v det ? ta [mv/ c] *1 = ? v det ( s ) (typ.) [v] *2 ?? v det ? ta ?? v det [ppm/ c] *3 1000 *1. temperature change ratio of the detection voltage *2. specified detection voltage *3. detection voltage temperature coefficient
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 10 seiko instruments inc. 2. cmos output products table 10 (ta = 25 c unless otherwise specified) item symbol condition min. typ. max. unit measure - ment circuit detection voltage *1 ? v det ? ? v det(s) 0.99 ? v det(s) ? v det(s) 1.01 v 1 hysteresis width v hys ? ? v det 0.03 ? v det 0.05 ? v det 0.07 v 1 current consumption i ss v dd = ? v det(s) + 1.5 v s-1000c15 to 39 ? 350 900 na 2 v dd = 5.5 v s-1000c40 to 46 ? 350 900 na 2 operating voltage v dd ? 0.95 ? 5.5 v 1 output current i out output transistor, nch, v ds = 0.5 v, v dd = 1.2 v 1.36 2.55 ? ma 3 output transistor, pch, v ds = 0.5 v, v dd = 5.5 v 1.71 2.76 ? ma 4 response time t plh ? ? ? 60 s 1 detection voltage temperature coefficient *2 ?? v det ? ta ?? v det ta = ? 40 to + 85 c ? 100 350 ppm/ c 1 *1. ? v det : actual detection voltage value, ? v det(s) : specified detection voltage value (the center value of the detection voltage range in table 3, 4 .) *2. the temperature change ratio in the detection voltage [m v / c] is calculated by using the following equation. ?? v det ? ta [mv/ c] *1 = ? v det ( s ) (typ.) [v] *2 ?? v det ? ta ?? v det [ppm/ c] *3 1000 *1. temperature change ratio of the detection voltage *2. specified detection voltage *3. detection voltage temperature coefficient
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 11 ? measurement circuits 1. s-1000 series v v dd vdd vss out v r *1 100 k ? * 1. r is unnecessary for cmos output products. figure 7 2. s-1000 series a v dd vdd vss out figure 8 3. s-1000 series v v ds v dd vdd vss out v a figure 9 4. s-1000 series v v dd v ds vdd vss out v a figure 10
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 12 seiko instruments inc. ? timing chart 1. nch open-drain output products v out vdd vss r 100 k ? release voltage ( + v det ) detection voltage ( ? v det ) v dd v ss minimum operating voltage output from the out pin hysteresis width (v hys ) v dd v ss figure 11 2. cmos output products v out vdd vss release voltage ( + v det ) detection voltage ( ? v det ) v dd v ss minimum operating voltage hysteresis width (v hys ) output from the out pin v ss v dd remark for values of v dd less than minimum operating voltage, values of out terminal output is free in the shaded region. figure 12
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 13 ? operation 1. basic operation: cmos output (active ?l?) (1) when the power supply voltage (v dd ) is higher than the release voltage ( + v det ), the nch transistor is off and the pch transistor is on to provide v dd (?h?) at the output. since the nch transistor n1 in figure 13 is off, the comparator input voltage is c b a dd c b r r r v ) r r ( + + ? + . (2) when the v dd goes below + v det , the output provides the v dd level, as long as the v dd remains above the detection voltage ? v det . when the v dd falls below ? v det (point a in figure 14 ), the nch transistor becomes on, the pch transistor becomes off, and the v ss level appears at the output. at this time the nch transistor n1 in figure 13 becomes on, the comparator input voltage is changed to b a dd b r r v r + ? . (3) when the v dd falls below the minimum operating voltage, the output becomes undefined, or goes to the v dd when the output is pulled up to the v dd . (4) the v ss level appears when the v dd rises above the minimum operating voltage. the v ss level still appears even when the v dd surpasses ? v det , as long as it does not exceed the release voltage + v det . (5) when the v dd rises above + v det (point b in figure 14 ), the nch transistor becomes off and the pch transistor becomes on to provide v dd level at the output. v ref pch nch n1 r c r b r a ? + out vss vdd *1 *1 *1 *1. parasiteic diode figure 13 operation 1
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 14 seiko instruments inc. hysteresis width (v hys ) a b v dd v ss minimum operating voltage output from the out pin v dd v ss (1) (2) (3) (5) (4) release voltage ( + v det ) detection voltage ( ? v det ) figure 14 operation 2 2. other characteristics 2. 1 temperature characteristics of detection voltage the shaded area in figure 15 shows the temperature characteristics of the detection voltage. ? 40 25 + 0.945 mv/c ? v det [v] 85 ta [c] ? 0.945 mv/c ? v det25 *1 *1. ? v det25 is an actual detection voltage value at 25c. figure 15 temperature characteristics of detection voltage ( example for ? v det = 2.7 v) 2. 2 temperature characteristics of release voltage the temperature change ta v det ? + ? of the release voltage is calculated by the temperature change ta v det ? ? ? of the detection voltage as follows: ta v v v ta v det det det det ? ? ? ? + = ? + ? the temperature changes of the release voltage and t he detection voltage have the same sign consequently.
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 15 2. 3 temperature characteristics of hysteresis voltage the temperature changes of the hyst eresis voltage is expressed as ta v ta v det det ? ? ? ? ? + ? and is calculated as follows: ta v v v ta v ta v det det hys det det ? ? ? ? = ? ? ? ? ? + ? ? standard circuit vdd out vss r * 1 100 k ? * 1. r is unnecessary for cmos output products. figure 16 caution the above connection diagram and constants do not guarantee correct operation. perform sufficient evaluation using the actual application to set the constants. ? explanation of terms 1. detection voltage ( ? v det ), release voltage ( + v det ) the detection voltage ( ? v det ) is a voltage at which the output turns to ?l?. the detection voltage varies slightly among products of the same specification. the variati on of detection voltage between the specified minimum ( ? v det ) min. and the maximum ( ? v det ) max. is called the detection voltage range (refer to figure 17 ). example: for the s-1000c15, the detection voltage lies in the range of 1.485 ( ? v det ) 1.515. this means that some s-1000c15s have 1.485 v for ? v det and some have 1.515 v. the release voltage is a voltage at which the output turns to ?h?. the release voltage varies slightly among products of the same specification. the variation of release voltages between the specified minimum ( + v det ) min. and the maximum ( + v det ) max. is called the release voltage range (refer to figure 18 ). the range is calculed from the actual detection voltage ( ? v det ) of a product and is expressed by ? v det 1.03 + v det ? v det 1.07. example: for the s-1000c15, the release voltage lies in the range of 1.530 ( + v det ) 1.621. this means that some s-1000c15s have 1.530 v for + v det and some have 1.621 v.
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 16 seiko instruments inc. detection voltage range detection voltage v dd ( ? v det ) min. ( ? v det ) max. out release voltage release voltage range v dd ( + v det ) min. ( + v det ) max. out figure 17 detection voltage (cmos output products) figure 18 release voltage (cmos output products) 2. hysteresis width (v hys ) the hysteresis width is the voltage difference between the detection voltage and the release voltage (the voltage at point b ? the voltage at point a = v hys in figure 14 ). the existence of the hysteresis width prevents malfunction caused by noise on input signal. 3. through-type current the through-type current refers to the current that flows instantaneously at the time of detection and release of a voltage detector. the through-type current is large in cmos out put products, small in nch open-drain output products. 4. oscillation in applications where a resistor is connected to the voltage detector input ( figure 19 ), taking a cmos active ?l? product for example, the through-type current which is generated when the output goes from ?l? to ?h? (release) causes a voltage drop equal to [through-type current] [input resistance] across the resistor. when the input voltage drops below the detection voltage ( ? v det ) as a result, the output voltage goes to low level. in this state, the through-type current stops and its resultant voltage drop disappears, and the output goes from ?l? to ?h?. the through-type current is then generated again, a voltage drop appears, and repea ting the process finally induces oscillation. out vss vdd r b r a v in s-1000c figure 19 an example for bad implem entation of input voltage divider
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 17 ? precautions ? if the input impedance is high, oscillati on may occur due to the through-type cu rrent etc. in coms output products, impedance should not be connected to the input pin. in nch open drain output products, input impedance is recommended to be 800 ? or less. however be sure to perform sufficient evatuation under the actual usage conditions for selection, including evaluation of temperature characteristics. ? in cmos output products oscillation may occur when a pull- down resistor is used, and falling speed of the power supply voltage (v dd ) is slow near the detection voltage. ? when designing for mass production using an application circui t described herein, the product deviation and temperature characteristics should be taken into cons ideration. sii shall not bear any res ponsibility for the products on the circuits described herein. ? do not apply an electrostatic discharge to this ic that ex ceeds the performance ratings of the built-in electrostatic protection circuit. ? sii claims no responsibility for any and all disputes arising out of or in connecti on with any infringement of the products including this ic upon patents owned by a third party.
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 18 seiko instruments inc. ? typical characteristics (typical data) 1. detection voltage (v det ) ? temperature (ta) -40 -20 0 20 40 60 80 1.59 v det [v] 1.58 1.57 1.56 1.55 1.54 1.53 1.52 1.50 1.49 s-1000c15 ta [ c ] +v det -v det -40 -20 020406080 4.85 4.80 4.75 4.70 4.65 4.60 4.55 4.50 4.45 4.40 v det [v] s-1000c46 ta [ c ] -v det +v det 2. hysteresis voltage width ? (v hys ) - temperature (ta) -40 -20 0 20 40 60 80 8.0 7.0 6.0 5.0 4.0 3.0 v hys [%] s-1000c15 ta [ c ] -40 -20 0 20 40 60 80 8.0 7.0 6.0 5.0 4.0 3.0 v hys [%] s-1000c46 ta [ c ] 3. current consumption (i ss ) ? input voltage (v dd ) 0 2.0 1.0 3.0 4.0 5.0 6.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 i ss [ a] s-1000c15 v dd [v] ta = 25 c 0 2.0 1.0 3.0 4.0 5.0 6.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 i ss [ a] s-1000c46 v dd [v] ta = 25 c 4. current consumption (i ss ) ? temperature (ta) -40 -20 0 20 40 60 80 0.8 0.6 0.4 0.2 0.0 i ss [ a] s-1000c15 v dd = 3.0 v ta [ c ] -40 -20 0 20 40 60 80 0.8 0.6 0.4 0.2 0.0 i ss [ a] s-1000c46 v dd = 5.5 v ta [ c ]
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 19 5. nch transistor output current (i out ) ? v ds 6. pch transistor output current (i out ) ? v ds 1.0 2.0 3.0 4.0 i out [ma] 20.0 15.0 10.0 5.0 0 0 v ds [v] ta = 25 c s-1000c46 / s-1000n46 v dd = 3.6 v v dd = 2.4 v v dd = 1.2 v v dd = 1.0 v i out [ma] 20.0 15.0 10.0 5.0 0 0 v ds [v] ta = 25 c s-1000c15 1.0 2.0 3.0 4.0 v dd = 4.6 v v dd = 3.6 v v dd = 2.4 v v dd = 1.9 v 7. nch transistor output current (i out ) 8. pch transistor output current (i out ) i out [ma] 8.0 6.0 4.0 2.0 s-1000c46 / s-1000n46 1.0 2.0 3.0 4.0 5.0 v dd [v] v ds = 0.5 v 0 0 ta = -40 c ta = 25 c ta = 85 c i out [ma] 4.0 3.0 2.0 1.0 0 0 v dd [v] v ds = 0.5 v s-1000c15 2.0 4.0 6.0 8.0 ta = -40 c ta = 25 c ta = 85 c 9. minimum operating voltage - input voltage (v dd ) v out [v] 0.8 0.6 0.4 0.2 0 0 s-1000n15 0.2 0.4 0.6 0.8 1.0 v dd [v] pll-up to v dd pll-up resistance : 100 k ? ta = -40 c ta = 25 c ta = 85 c v out [v] 2.0 2.5 3.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 v dd [v] pll-up to 3.0 v pll-up resistance : 100 k ? s-1000n15 ta = -40 c ta = 25 c ta = 85 c v out [v] 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 v dd [v] s-1000n46 pll-up to v dd pll-up resistance : 100 k ? ta = -40 c ta = 25 c ta = 85 c v out [v] 6.0 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 v dd [v] s-1000n46 pll-up to 5.5 v pll-up resistance : 100 k ? ta = -40 c ta = 25 c ta = 85 c
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 20 seiko instruments inc. v out (v) pull-up pull-up 0.1 0 v dd (v) v ddmin 1.0 2.0 2.5 1.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.60 v ddmin [v] 0.55 0.50 0.45 0.40 0.35 0.30 pull-up [v] s-1000n15 pll-up resistance : 100 k ? ta = -40 c ta = 25 c ta = 85 c remark v ddmin. is defined by the v dd voltage at which v out goes below 10% of pull-up voltage when the v dd increase from 0 v. 1.0 2.0 2.5 1.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.60 v ddmin [v] 0.55 0.50 0.45 0.40 0.35 0.30 pull-up [v] pll-up resistance : 100 k ? s-1000n46 ta = 85 c ta = 25 c ta = -40 c figure 20 10. dynamic response - c out 0.0001 0.001 0.01 0.1 response time [ms] load capacitance [ f] ta = 25 c s-1000n15 pll-up to v dd pll-up resistance : 100 k ? 0.00001 0.01 0.001 0.1 1 10 100 t plh t phl 0.00001 0.0001 0.001 0.01 0.001 0.1 1 0.01 0.1 response time [ms] load capacitance [ f] ta = 25 c s-1000c15 t plh t phl 0.00001 0.0001 0.001 0.01 0.001 0.1 1 10 0.01 0.1 response time [ms] load capacitance [ f] ta = 25 c pll-up to v dd pll-up resistance : 100 k ? 100 t plh t phl s-1000n46 0.00001 0.0001 0.001 0.01 0.001 0.1 1 0.01 0.1 response time [ms] load capacitance [ f] ta = 25 c s-1000c46 t plh t phl
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 21 out vss vdd s-1000 series v r *1 100 k ? c out v dd v *1. r is unnecessary for cmos output products. figure 22 measurement circuit for response time v ih output voltage input voltagae v il v dd t phl t plh v ih = 5.5 v, v il = 0.95 v 1 1 s v dd 10% v dd 90% figure 21 measurement condition for response time caution the above connection diagram and constants do not guarantee correct operation. perform sufficient evaluation using the actual application to set the constants. ? application circuit examples 1. microcomputer reset circuits if the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. when power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. reset circuits shown in figures 23, 24 can be easily constructed with the help of the s-1000 series, that has low operating voltage, a high-precision detection voltage and hysteresis. vss vdd microcomputer s-1000c vss (only for nch open-drain products) vdd1 vdd2 microcomputer s-1000n figure 23 reset circuit example(s-1000c) figure 24 reset circuit example (s-1000n) caution the above connection diagram and constants do not guarantee correct operation. perform sufficient evaluation using the actual application to set the constants.
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 22 seiko instruments inc. 2. power-on reset circuit a power-on reset circuit can be constructed usin g nch open-drain output product of s-1000 series. ( nch open-drain products) out vin vss vdd s-1000n r *1 c *1 di *2 *1. r should be 75 k ? or less, and c should be 0.01 f or more to prevent oscillation. if c is not connected, r should be 800 ? or less. *2. diode di instantaneously discharges t he charge stored in the capacitor (c) at the power falling, di can be removed when the delay of the falling time is not important. figure 25 v dd (v) t (s) out (v) t (s) figure 26 remark when the power rises sharply as shown in the figure 27 left, the output may goes to the high level for an instant in the undefined region where the output voltage is undefined since the power voltage is less than the minimum operation voltage. v dd (v) t (s) out (v) t (s) figure 27 caution the above connection diagram and constants do not guarantee correct operation. perform sufficient evaluation using the actual application to set the constants.
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 23 3. change of detection voltage in nch open-drain output products of the s-1000 series, det ection voltage can be changed using resistance dividers or diodes as shown in figures 28 to 29 . in figure 28 , hysteresis width also changes. (nch open-drain output products) r a *1 out vin vss vdd + ? s-1000n r b c *1 det b b a v r r r voltagae detection ? ? + = hys b b a v r r r width hysterisis ? + = (nch open-drain output product) v f1 out vin vss vdd s-1000n v f2 detection voltage = v f1 +v f2 +( ? v det ) figure 29 *1. r a should be 75 k ? or less, and c should be 0.01 f or more to prevent oscillation. if c is not connected, r a should be 800 ? or less. caution if r a and r b are large, the hysteresis width may aloso be larger than the value given by the above equation due to the through-type current (which flows slightly in an nch open-drain product). figure 28 caution the above connection diagram and constants do not guarantee correct operation. perform sufficient evaluation using the actual application to set the constants.
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 24 seiko instruments inc. ? marking specifications (1) sc-82ab (1) to (3): product abbreviation (refer to list of product names and product abbreviations ) sc-82ab top view (1) (2) (3) 1 2 4 3 list of product names and product abbreviations (a) nch open-drain output products product abbreviation product abbreviation product name (1) (2) (3) product name (1) (2) (3) s-1000n15-n4t1 p l a s-1000n31-n4t1 p l q s-1000n16-n4t1 p l b s-1000n32-n4t1 p l r s-1000n17-n4t1 p l c s-1000n33-n4t1 p l s s-1000n18-n4t1 p l d s-1000n34-n4t1 p l t s-1000n19-n4t1 p l e s-1000n35-n4t1 p l u s-1000n20-n4t1 p l f s-1000n36-n4t1 p l v s-1000n21-n4t1 p l g s-1000n37-n4t1 p l w s-1000n22-n4t1 p l h s-1000n38-n4t1 p l x s-1000n23-n4t1 p l i s-1000n39-n4t1 p l y s-1000n24-n4t1 p l j s-1000n40-n4t1 p l z s-1000n25-n4t1 p l k s-1000n41-n4t1 p l 2 s-1000n26-n4t1 p l l s-1000n42-n4t1 p l 3 s-1000n27-n4t1 p l m s-1000n43-n4t1 p l 4 s-1000n28-n4t1 p l n s-1000n44-n4t1 p l 5 s-1000n29-n4t1 p l o s-1000n45-n4t1 p l 6 s-1000n30-n4t1 p l p s-1000n46-n4t1 p l 7 (b) cmos output products product abbreviation product abbreviation product name (1) (2) (3) product name (1) (2) (3) s-1000c15-n4t1 p k a s-1000c31-n4t1 p k q s-1000c16-n4t1 p k b s-1000c32-n4t1 p k r s-1000c17-n4t1 p k c s-1000c33-n4t1 p k s s-1000c18-n4t1 p k d s-1000c34-n4t1 p k t s-1000c19-n4t1 p k e s-1000c35-n4t1 p k u s-1000c20-n4t1 p k f s-1000c36-n4t1 p k v s-1000c21-n4t1 p k g s-1000c37-n4t1 p k w s-1000c22-n4t1 p k h s-1000c38-n4t1 p k x s-1000c23-n4t1 p k i s-1000c39-n4t1 p k y s-1000c24-n4t1 p k j s-1000c40-n4t1 p k z s-1000c25-n4t1 p k k s-1000c41-n4t1 p k 2 s-1000c26-n4t1 p k l s-1000c42-n4t1 p k 3 s-1000c27-n4t1 p k m s-1000c43-n4t1 p k 4 s-1000c28-n4t1 p k n s-1000c44-n4t1 p k 5 s-1000c29-n4t1 p k o s-1000c45-n4t1 p k 6 s-1000c30-n4t1 p k p s-1000c46-n4t1 p k 7
ultra-small package high-precision voltage detector rev.1.0 _01 s-1000c series seiko instruments inc. 25 (2) sot-23-5 (1) to (3) : product abbreviation (refer to list of product names and product abbreviations ) (4) : lot number 5 4 1 3 2 (1) (2) (3) (4) sot-23-5 top view list of product names and product abbreviations (a) nch open-drain output products product abbreviation product abbreviation product name (1) (2) (3) product name (1) (2) (3) s-1000n15-m5t1 p l a s-1000n31-m5t1 p l q s-1000n16-m5t1 p l b s-1000n32-m5t1 p l r s-1000n17-m5t1 p l c s-1000n33-m5t1 p l s s-1000n18-m5t1 p l d s-1000n34-m5t1 p l t s-1000n19-m5t1 p l e S-1000N35-M5T1 p l u s-1000n20-m5t1 p l f s-1000n36-m5t1 p l v s-1000n21-m5t1 p l g s-1000n37-m5t1 p l w s-1000n22-m5t1 p l h s-1000n38-m5t1 p l x s-1000n23-m5t1 p l i s-1000n39-m5t1 p l y s-1000n24-m5t1 p l j s-1000n40-m5t1 p l z s-1000n25-m5t1 p l k s-1000n41-m5t1 p l 2 s-1000n26-m5t1 p l l s-1000n42-m5t1 p l 3 s-1000n27-m5t1 p l m s-1000n43-m5t1 p l 4 s-1000n28-m5t1 p l n s-1000n44-m5t1 p l 5 s-1000n29-m5t1 p l o s-1000n45-m5t1 p l 6 s-1000n30-m5t1 p l p s-1000n46-m5t1 p l 7 (b) cmos output products product abbreviation product abbreviation product name (1) (2) (3) product name (1) (2) (3) s-1000c15-m5t1 p k a s-1000c31-m5t1 p k q s-1000c16-m5t1 p k b s-1000c32-m5t1 p k r s-1000c17-m5t1 p k c s-1000c33-m5t1 p k s s-1000c18-m5t1 p k d s-1000c34-m5t1 p k t s-1000c19-m5t1 p k e s-1000c35-m5t1 p k u s-1000c20-m5t1 p k f s-1000c36-m5t1 p k v s-1000c21-m5t1 p k g s-1000c37-m5t1 p k w s-1000c22-m5t1 p k h s-1000c38-m5t1 p k x s-1000c23-m5t1 p k i s-1000c39-m5t1 p k y s-1000c24-m5t1 p k j s-1000c40-m5t1 p k z s-1000c25-m5t1 p k k s-1000c41-m5t1 p k 2 s-1000c26-m5t1 p k l s-1000c42-m5t1 p k 3 s-1000c27-m5t1 p k m s-1000c43-m5t1 p k 4 s-1000c28-m5t1 p k n s-1000c44-m5t1 p k 5 s-1000c29-m5t1 p k o s-1000c45-m5t1 p k 6 s-1000c30-m5t1 p k p s-1000c46-m5t1 p k 7
ultra-small package high-precision voltage detector s-1000 series rev.1.0 _01 26 seiko instruments inc. (3) snt-4a (1) to (3): product abbreviation (refer to list of product names and product abbreviations ) 1 snt-4a top view (1) (2) (3) 2 4 3 list of product names and product abbreviations (a) nch open-drain output products product abbreviation product abbreviation product name (1) (2) (3) product name (1) (2) (3) s-1000n15-i4t1g p l a s-1000n31-i4t1g p l q s-1000n16-i4t1g p l b s-1000n32-i4t1g p l r s-1000n17-i4t1g p l c s-1000n33-i4t1g p l s s-1000n18-i4t1g p l d s-1000n34-i4t1g p l t s-1000n19-i4t1g p l e s-1000n35-i4t1g p l u s-1000n20-i4t1g p l f s-1000n36-i4t1g p l v s-1000n21-i4t1g p l g s-1000n37-i4t1g p l w s-1000n22-i4t1g p l h s-1000n38-i4t1g p l x s-1000n23-i4t1g p l i s-1000n39-i4t1g p l y s-1000n24-i4t1g p l j s-1000n40-i4t1g p l z s-1000n25-i4t1g p l k s-1000n41-i4t1g p l 2 s-1000n26-i4t1g p l l s-1000n42-i4t1g p l 3 s-1000n27-i4t1g p l m s-1000n43-i4t1g p l 4 s-1000n28-i4t1g p l n s-1000n44-i4t1g p l 5 s-1000n29-i4t1g p l o s-1000n45-i4t1g p l 6 s-1000n30-i4t1g p l p s-1000n46-i4t1g p l 7 (b) cmos output products product abbreviation product abbreviation product name (1) (2) (3) product name (1) (2) (3) s-1000c15-i4t1g p k a s-1000c31-i4t1g p k q s-1000c16-i4t1g p k b s-1000c32-i4t1g p k r s-1000c17-i4t1g p k c s-1000c33-i4t1g p k s s-1000c18-i4t1g p k d s-1000c34-i4t1g p k t s-1000c19-i4t1g p k e s-1000c35-i4t1g p k u s-1000c20-i4t1g p k f s-1000c36-i4t1g p k v s-1000c21-i4t1g p k g s-1000c37-i4t1g p k w s-1000c22-i4t1g p k h s-1000c38-i4t1g p k x s-1000c23-i4t1g p k i s-1000c39-i4t1g p k y s-1000c24-i4t1g p k j s-1000c40-i4t1g p k z s-1000c25-i4t1g p k k s-1000c41-i4t1g p k 2 s-1000c26-i4t1g p k l s-1000c42-i4t1g p k 3 s-1000c27-i4t1g p k m s-1000c43-i4t1g p k 4 s-1000c28-i4t1g p k n s-1000c44-i4t1g p k 5 s-1000c29-i4t1g p k o s-1000c45-i4t1g p k 6 s-1000c30-i4t1g p k p s-1000c46-i4t1g p k 7

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the information described herein is subject to change without notice. seiko instruments inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. the application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. when the products described herein are regulated products subject to the wassenaar arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. use of the information described herein for other purposes and/or reproduction or copying without the express permission of seiko instruments inc. is strictly prohibited. the products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of seiko instruments inc. although seiko instruments inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. the user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.

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