a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982-1200 fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv cbo i c = 100 ma 50 v bv ceo i c = 40 ma 25 v bv cer i c = 50 ma r be = 22 w 50 v bv ebo i e = 10 ma 3.5 v i cbo v cb = 24 v 2.0 ma h fe v ce = 10 v i c = 200 ma 20 100 --- c ob v cb = 24 v f = 1.0 mhz 40 50 pf p out g p h h c v cc = 24 v p in = 5.3 w f = 960 mhz 30 7.5 45 50 w db % npn silicon rf power transistor SD1425 description: the asi SD1425 is designed for class ab linear base station applications in the 800-900 mhz frequency range. features include : gold metalization input matching common emitter emitter ballast resistors maximum ratings i c 5.0 a v cbo 50 v v ces 45 v p diss 43 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c q q jc 3.0 o c/w package style .230 6l flg 1,3,4,6 = emitter 2 = base 5 = collector
a d v a n c e d s e m i c o n d u c t o r, i n c. 7525 ethel avenue north hollywood, ca 91605 (818) 982-1202 telex : 18-2651 fax (818) 765-3004 error! reference source not found.
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