hexfet ? power mosfet IRL1104 pd -91805 l logic-level gate drive l advanced process technology l ultra low on-resistance l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated v dss = 40v r ds(on) = 0.008 w i d = 104a ? s d g 10/19/99 parameter min. typ. max. units r q jc junction-to-case CCCC CCCC 0.9 r q cs case-to-sink, flat, greased surface CCCC 0.50 CCCC c/w r q ja junction-to-ambient CCCC CCCC 62 thermal resistance description parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 104 ? i d @ t c = 100c continuous drain current, v gs @ 10v 74 a i dm pulsed drain current ? 416 p d @t c = 25c power dissipation 167 w linear derating factor 1.1 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy ? 340 mj i ar avalanche current ? 62 a e ar repetitive avalanche energy ? 17 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. www.irf.com 1 to-220ab
IRL1104 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.04 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.008 v gs = 10v, i d = 62a ? CCC CCC 0.012 v gs = 4.5v, i d = 52a ? v gs(th) gate threshold voltage 1.0 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance 53 CCC CCC s v ds = 25v, i d = 62a CCC CCC 25 v ds = 40v, v gs = 0v CCC CCC 250 v ds = 32v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 16v gate-to-source reverse leakage CCC CCC -100 v gs = -16v q g total gate charge CCC CCC 68 i d = 62a q gs gate-to-source charge CCC CCC 24 nc v ds = 32v q gd gate-to-drain ("miller") charge CCC CCC 33 v gs = 4.5v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 18 CCC v dd = 20v t r rise time CCC 257 CCC i d = 62a t d(off) turn-off delay time CCC 32 CCC r g = 3.6 w , v gs = 4.5v t f fall time CCC 64 CCC r d = 0.4 w , see fig. 10 ? between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 3445 CCC v gs = 0v c oss output capacitance CCC 1065 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 270 CCC ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) na s d g i dss drain-to-source leakage current r ds(on) static drain-to-source on-resis- i gss l d internal drain inductance CCC 4.5 CCC l s internal source inductance CCC 7.5 CCC ns a nh w parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 62a, v gs = 0v ? t rr reverse recovery time CCC 84 126 ns t j = 25c, i f = 62a q rr reverse recovery charge CCC 223 335 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) a CCC CCC 416 CCC CCC 104 ? s d g source-drain ratings and characteristics ? v dd = 15v, starting t j = 25c, l = 0.18mh r g = 25 w , i as =62a. (see figure 12) ? calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to design tip # 93-4 ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? pulse width 300s; duty cycle 2%. ? i sd 62a, di/dt 217a/s, v dd v (br)dss , t j 175c notes:
IRL1104 www.irf.com 3 fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 104a 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 2.0 4.0 6.0 8.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j 25
IRL1104 4 www.irf.com fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage 0 20 40 60 80 0 2 4 6 8 10 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 62 a v = 20v ds v = 32v ds 1 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j
IRL1104 www.irf.com 5 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package
IRL1104 6 www.irf.com q g q gs q gd v g charge fig 13a. basic gate charge waveform d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12c. maximum avalanche energy vs. drain current fig 13b. gate charge test circuit 4.5 v fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 10v 5 25 50 75 100 125 150 175 0 200 400 600 800 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 25a 44a 62a
IRL1104 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
IRL1104 8 www.irf.com to-220ab package details dimensions are shown in millimeters (inches) to-220ab part marking lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 a b . 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 10/99
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/
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