? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 600 v v dgr t j = 25 c to 150 c, r gs = 1m - 600 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 10 a i dm t c = 25 c, pulse width limited by t jm - 40 a i a t c = 25 c - 10 a e as t c = 25 c30mj p d t c = 25 c 300 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-268 4 g to-247 6 g ds98849c(01/10) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 600 v v gs(th) v ds = v gs , i d = - 250 a - 3.0 - 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 0.8 ?v dss , v gs = 0v - 25 a t j = 125 c -1 ma r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 1 standard power mosfet p-channel enhancement mode avalanche rated ixth10p60 ixtt10p60 v dss = - 600v i d25 = - 10a r ds(on) 1 g = gate d = drain s = source tab = drain to-247 (ixth) to-268 (ixtt) g s d (tab) s g d (tab) d features z international standard packages z avalanche rated z low package inductance z rugged polysilicon gate cell structure advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment
ixth10p60 ixtt10p60 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 5 9 s c iss 4700 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 430 pf c rss 135 pf t d(on) 33 ns t r 27 ns t d(off) 85 ns t f 35 ns q g(on) 160 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 46 nc q gd 92 nc r thjc 0.42 c/w r thcs to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v -10 a i sm repetitive, pulse width limited by t jm - 40 a v sd i f = i s , v gs = 0v, note 1 - 3 v t rr 500 ns ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 4.7 (external) i f = i s , -di/dt = -100a/ s e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixtt) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2010 ixys corporation, all rights reserved ixth10p60 ixtt10p60 v gs - volts -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 i d - amperes -12 -10 -8 -6 -4 -2 0 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes -12 -10 -8 -6 -4 -2 0 t j - degrees c -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.0 0.5 1.0 1.5 2.0 2.5 i d - amperes -20 -15 -10 -5 0 r ds(on) - normalized 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds - volts -20 -15 -10 -5 0 i d - amperes -15 -10 -5 0 v ds - volts -15 -10 -5 0 i d - amperes -20 -15 -10 -5 0 -5v v gs = -10v t j = 125 o c t j = 25 o c -6v -5v t j = 25 o c t j = 25 o c t j = 150 o c -6v v gs = -10v -9v -8v -7v v gs = -10v -9v -8v t j = 125 o c t j = -40 o c i d = -10a i d = -5a v gs = -10v -7v fig. 1. output characteristics at 25 o c fig. 2. output characteristics at 125 o c fig. 3. r ds(on) vs. drain current fig. 4. r ds(on) vs. t j fig. 5. drain current vs. case temperature fig. 6. admittance curves
ixth10p60 ixtt10p60 ixys reserves the right to change limits, test conditions, and dimensions. q g - nanocoulombs 0 25 50 75 100 125 v ge - volts -10 -8 -6 -4 -2 0 pulse width - seconds 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.01 0.1 1 v ds - volts -40 -35 -30 -25 -20 -15 -10 -5 0 capacitance - pf 200 300 500 2000 3000 5000 100 1000 10000 crss coss ciss f = 1mhz d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle d=0.2 v sd - volts 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - amperes 0 5 10 15 20 t j = 125 o c t j = 25 o c v ds = -300v i d = -5a i g = -1ma fig. 7. source current vs source-to-drain voltage fig. 8. capacitance curves fig. 9. gate charge characteristic curve fig. 11. maximum thermal impedance ixys ref: t_10p60(7b)1-08-10 fig. 10. forward-bias safe operating area 0.1 1.0 10.0 100.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s r ds(on) limit - - - - 100ms - - 1ms 10ms - dc
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