1w high power laser diode description the sld323xt is a high power, gain-guided laser diode produced by mocvd method ? 1 . compared to the sld300 series, this laser diode has a high brightness output with a doubled optical density which can be achived by qw-sch structure ? 2 . fine adjustment of the oscillation wavelength is possible by controllingthe temperature using the built- in te cooler (peltier element). ? 1 mocvd: metal organic chemical vapor deposition ? 2 qw-sch: quantum well separate confinement heterostructure features high power recommended optical power output: po = 1.0w low operating current: iop = 1.4a (po = 1.0w) flat package with built-in photo diode, te cooler, and thermistor applications solid state laser excitation medical use material processes measurement structure algaas quantum well structure laser diode operating lifetime mttf 10,000h (effective value) at po = 1.0w, tth = 25? absolute maximum ratings (tth = 25?) optical power output pomax 1.1 w reverse voltage v r ld 2 v pd 15 v operating temperature (tth) topr ?0 to +30 ? storage temperature tstg ?0 to +85 ? ?1 e93208c19-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. sld323xt 12 t h ld te cooler pd p n 34 56 78 18 equivalent circuit no. 1 2 3 4 5 6 7 8 function te cooler (negative) thermistor lead 1 thermistor lead 2 laser diode (anode) laser diode (cathode) photodiode (cathode) photodiode (anode) te cooler (positive) pin configuration (top view) warranty this warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. sony quality assurance department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of sony, the product shall be replaced free of charge. laser diodes naturally have differing lifetimes which follow a weibull distribution. special warranties are also available. m-273
2 sld323xt electrical and optical characteristics (tth: thermistor temperature, tth = 25 c) item symbol conditions min. typ. max. unit ith iop vop p imon ? // ? x, ? y ?? d rth threshold current operating current operating voltage wavelength ? monitor current radiation angle positional accuracy differential efficiency thermistor resistance p o = 1.0w p o = 1.0w p o = 1.0w p o = 1.0w v r = 10v p o = 1.0w p o = 1.0w p o = 1.0w tth = 25 c 790 0.3 20 4 0.5 0.3 1.4 2.1 1.5 30 9 0.9 10 0.5 2.0 3.0 840 6.0 40 17 100 3 a a v nm ma degree degree m degree w/a k ? perpendicular parallel position angle ? wavelength selection classification type SLD323XT-1 sld323xt-2 sld323xt-3 wavelength (nm) 795 5 810 10 830 10 type sld323xt-21 sld323xt-24 sld323xt-25 wavelength (nm) 798 3 807 3 810 3
3 sld323xt example of representative characteristics optical power output vs. forward current characteristics i f forward current [ma] 0 400 800 1200 1600 2000 300 600 900 1200 1500 po optical power output [mw] tth = 10 c tth = 0 c tth = 25 c tth = 30 c optical power output vs. monitor current characteristics imon monitor current [ma] 01.5 0 500 1000 po optical power output [mw] tth = 10 c tth = 0 c tth = 25 c tth = 15 c tth = 30 c threshold current vs. temperature characteristics tth thermistor temperature [ c] 10 0 10 20 30 100 500 1000 ith threshold current [ma] tempareture dependence of far field pattern (parallel to junction) angle [degree] 90 60 30 0 30 60 90 radiation intensity (optional scale) p o = 1000mw tth = 25 c tth = 10 c tth = 5 c power dependence of far field pattern (parallel to junction) angle [degree] 90 60 30 0 30 60 90 radiation intensity (optional scale) tth = 25 c p o = 1000mw p o = 800mw p o = 600mw p o = 400mw p o = 200mw power dependence of far field pattern (perpendicular to junction) angle [degree] 90 60 300 306090 radiation intensity (optional scale) tth = 25 c p o = 1000mw p o = 800mw p o = 600mw p o = 400mw p o = 200mw
4 sld323xt temperature dependence of far field pattern (perpendicular to junction) angle [degree] 90 60 30 0 30 60 90 radiation intensity (optional scale) p o = 1000mw tth = 25 c tth = 10 c tth = 5 c 790 800 820 810 p wavelength [nm] dependence of wavelength tth thermistor temperature [ c] 100 102030 po = 1000mw 0 0.5 1.0 d differential efficiency [mw/ma] differential efficiency vs. temperature characteristics tth thermistor temperature [ c] 100 102030 0 10 5 0 50 ? t temperature difference [ c] ? t: tc tth tth: thermistor temperature tc: case temperature te cooler characteristics 1 q absorbed heat [w] 100 tc = 33 c 2.0a 1.5a 2.5a 2.0a 0.5a 1.0a 1.5a ? t vs v t ? t v s q 0.5a 5 4 3 2 1 0 v t pin voltage [v] 1.0a i t = 2.5a rth thermistor resistance [k ? ] 50 10 5 1 100 10203040506070 thermistor characteristics tth thermistor temperature [ c] 10 5 5 4 3 2 1 0 50 ? t temperature difference [ c] te cooler characteristics 2 q absorbed heat [w] v t pin voltage [v] 100 tth = 25 c i t = 2.5a 2.0a 1.5a 1.0a 2.5a 2.0a 1.5a 1.0a 0.5a ? t vs v ? t vs q 0 0.5a te cooler characteristics
5 sld323xt wavelength [nm] 802 0.2 0.4 0.6 0.8 1.0 810 808 806 804 relative rediant intensity tth = 25 c po = 400mw wavelength [nm] 802 0.2 0.4 0.6 0.8 1.0 810 808 806 804 relative rediant intensity tth = 25 c po = 800mw wavelength [nm] 802 0.2 0.4 0.6 0.8 1.0 810 808 806 804 relative rediant intensity tth = 25 c po = 1000mw wavelength [nm] 802 0.2 0.4 0.6 0.8 1.0 810 808 806 804 relative rediant intensity tth = 25 c po = 600mw power dependence of spectrum
6 sld323xt wavelength [nm] 795 0.2 0.4 0.6 0.8 1.0 820 815 810 805 790 800 relative radiant intensity tth = 10 c wavelength [nm] 795 0.2 0.4 0.6 0.8 1.0 820 815 810 805 790 800 relative radiant intensity tth = 25 c wavelength [nm] 795 0.2 0.4 0.6 0.8 1.0 820 815 810 805 790 800 relative radiant intensity tth = 30 c wavelength [nm] 795 0.2 0.4 0.6 0.8 1.0 820 815 810 805 790 800 relative radiant intensity tth = 0 c temperature dependence of spectrum (po = 1000mw)
7 sld323xt notes on operation care should be taken for the following points when using this product. (1) this product corresponds to a class 4 product under iec60825-1 and jis standard c6802 "laser product emission safety standards". (2) eye protection against laser beams take care not to allow laser beams to enter your eyes under any circumstances. for observing laser beams, always use safety goggles that block laser beams. usage of ir scopes, ir cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) gallium arsenide this product uses gallium arsenide (gaas). this is not a problem for normal use, but gaas vapors may be potentially hazardous to the human body. therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. in addition, the following disposal methods are recommended when disposing of this product. 1. engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) prevention of surge current and electrostatic discharge laser diodes are most sensitive to electrostatic discharge among semiconductors. when a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. therefore, be extremely careful about overcurrent and electrostatic discharge. (5) use for special applications this product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. consult your sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. laser radiation avoid eye or skin exposure to direct or scattered radiation laser diode laser diode avoid exposure laser radiation is emitted from this aperture. this product complies with 21 cfr part 1040.10 and 1040.11 sony corporation 6-7-35 kitashinagawa, shinagawa-ku,tokyo 141-0001 japan maximum output over 1 w wavelength 600 - 950 nm class iv laser product
8 sld323xt package outline unit: mm m-273 (lo-10) sony code eiaj code jedec code package structure m-273(lo-10) 33.0 0.05 15.0 0.05 5.0 4 ?r1.2 0.3 window glass 8 ? 0.6 2.54 ? 7.5 0.1 14.0 28.0 0.5 38.0 0.5 19.0 ld chip 28.0 0.5 16.5 0.1 3.0 7.5 0.2 11.35 0.1 0.65max 10.4 reference plane ? ? distance between pilot hole and emittng area 4 ? 3.0 0 + 0.05 + 2.0 8.0 ?1.0 package mass 43g sony corporation
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