march 2006 / d page 1 semiconductor tak cheong ? 500 mw do-35 hermetically sealed glass zener voltage regulators absolute maximum ratings t a = 25c unless otherwise noted parameter value units power dissipation 500 mw storage temperature range -65 to +200 c operating junction temperature +200 c lead temperature (1/16? from case for 10 seconds) +230 c these ratings are limiting values above which the serviceability of the diode may be impaired. specification features: ? zener voltage range 2.0 to 56 volts ? do-35 package (jedec) ? through-hole device type mounting ? hermetically sealed glass ? compression bonded construction ? all external surfaces are corrosion resistant and leads are readily solderable ? cathode indicated by polarity band electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( a) max v r (volts) tcbzx55c 2v0 1.88 2.11 5 100 1 600 100 1 tcbzx55c 2v2 2.08 2.33 5 100 1 600 100 1 tcbzx55c 2v4 2.28 2.56 5 85 1 600 50 1 tcbzx55c 2v7 2.51 2.89 5 85 1 600 10 1 tcbzx55c 3v0 2.8 3.2 5 85 1 600 4 1 tcbzx55c 3v3 3.1 3.5 5 85 1 600 2 1 tcbzx55c 3v6 3.4 3.8 5 85 1 600 2 1 tcbzx55c 3v9 3.7 4.1 5 85 1 600 2 1 tcbzx55c 4v3 4 4.6 5 75 1 600 1 1 tcbzx55c 4v7 4.4 5 5 60 1 600 0.5 1 tcbzx55c 5v1 4.8 5.4 5 35 1 550 0.1 1 tcbzx55c 5v6 5.2 6 5 25 1 450 0.1 1 tcbzx55c 6v2 5.8 6.6 5 10 1 200 0.1 2 tcbzx55c 6v8 6.4 7.2 5 8 1 150 0.1 3 tcbzx55c 7v5 7 7.9 5 7 1 50 0.1 5 tcbzx55c 8v2 7.7 8.7 5 7 1 50 0.1 6.2 tcbzx55c 9v1 8.5 9.6 5 10 1 50 0.1 6.8 tcbzx55c 10 9.4 10.6 5 15 1 70 0.1 7.5 tcbzx55c 11 10.4 11.6 5 20 1 70 0.1 8.2 tcbzx55c 12 11.4 12.7 5 20 1 90 0.1 9.1 tcbzx55c 13 12.4 14.1 5 26 1 110 0.1 10 tcbzx55c 15 13.8 15.6 5 30 1 110 0.1 11 tcbzx55c 16 15.3 17.1 5 40 1 170 0.1 12 tcbzx55c 18 16.8 19.1 5 50 1 170 0.1 13 tcbzx55c 20 18.8 21.1 5 55 1 220 0.1 15 tcbzx55c 22 20.8 23.3 5 55 1 220 0.1 16 cathode anode electrical symbol tcbzx55c2v0 through tcbzx55c75 series l 55t xxx device marking diagram l : logo device code : tcbzx55txxx t : vz tolerance b= 2% c= 5% axial lead do35
march 2006 / d page 2 semiconductor tak cheong ? electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( a) max v r (volts) tcbzx55c 24 22.8 25.6 5 80 1 220 0.1 18 tcbzx55c 27 25.1 28.9 5 80 1 220 0.1 20 tcbzx55c 30 28 32 5 80 1 220 0.1 22 tcbzx55c 33 31 35 5 80 1 220 0.1 24 tcbzx55c 36 34 38 5 80 1 220 0.1 27 tcbzx55c 39 37 41 2.5 90 0.5 500 0.1 28 tcbzx55c 43 40 46 2.5 90 0.5 600 0.1 32 tcbzx55c 47 44 50 2.5 110 0.5 700 0.1 35 tcbzx55c 51 48 54 2.5 125 0.5 700 0.1 38 tcbzx55c 56 52 60 2.5 135 0.5 1000 0.1 42 tcbzx55c 62 58 66 2.5 150 0.5 1000 0.1 47 tcbzx55c 68 64 72 2.5 160 0.5 1000 0.1 51 tcbzx55c 75 70 80 2.5 170 0.5 1000 0.1 56 v f forward voltage = 1.0 v maximum @ i f = 100 ma for all types v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( a) max v r (volts) tcbzx55b 2v4 2.35 2.45 5 85 1 600 50 1 tcbzx55b 2v7 2.65 2.75 5 85 1 600 10 1 tcbzx55b 3v0 2.94 3.06 5 85 1 600 4 1 tcbzx55b 3v3 3.23 3.37 5 85 1 600 2 1 tcbzx55b 3v6 3.53 3.67 5 85 1 600 2 1 tcbzx55b 3v9 3.82 3.98 5 85 1 600 2 1 tcbzx55b 4v3 4.21 4.39 5 75 1 600 1 1 tcbzx55b 4v7 4.61 4.79 5 60 1 600 0.5 1 tcbzx55b 5v1 5.00 5.20 5 35 1 550 0.1 1 tcbzx55b 5v6 5.49 5.71 5 25 1 450 0.1 1 tcbzx55b 6v2 6.08 6.32 5 10 1 200 0.1 2 tcbzx55b 6v8 6.66 6.94 5 8 1 150 0.1 3 tcbzx55b 7v5 7.33 7.63 5 7 1 50 0.1 5 tcbzx55b 8v2 8.04 8.36 5 7 1 50 0.1 6.2 tcbzx55b 9v1 8.92 9.28 5 10 1 50 0.1 6.8 tcbzx55b 10 9.80 10.20 5 15 1 70 0.1 7.5 tcbzx55b 11 10.78 11.22 5 20 1 70 0.1 8.2 tcbzx55b 12 11.76 12.24 5 20 1 90 0.1 9.1 tcbzx55b 13 12.74 13.26 5 26 1 110 0.1 10 tcbzx55b 15 14.70 15.30 5 30 1 110 0.1 11 tcbzx55b 16 15.68 16.32 5 40 1 170 0.1 12 tcbzx55b 18 17.64 18.36 5 50 1 170 0.1 13 tcbzx55b 20 19.60 20.40 5 55 1 220 0.1 15 tcbzx55b 22 21.56 22.44 5 55 1 220 0.1 16 tcbzx55b 24 23.52 24.48 5 80 1 220 0.1 18 tcbzx55b 27 26.46 27.54 5 80 1 220 0.1 20 tcbzx55b 30 29.40 30.60 5 80 1 220 0.1 22 tcbzx55b 33 32.34 33.66 5 80 1 220 0.1 24 tcbzx55b 36 35.28 36.72 5 80 1 220 0.1 27 tcbzx55b 39 38.22 39.78 2.5 90 0.5 500 0.1 28 tcbzx55b 43 42.14 43.86 2.5 90 0.5 600 0.1 32 tcbzx55b 47 46.06 47.94 2.5 110 0.5 700 0.1 35 tcbzx55b 51 49.98 52.02 2.5 125 0.5 700 0.1 38 tcbzx55b 56 54.88 57.12 2.5 135 0.5 1000 0.1 42 tcbzx55b 62 60.76 63.24 2.5 150 0.5 1000 0.1 47 tcbzx55b 68 66.64 69.36 2.5 160 0.5 1000 0.1 51 tcbzx55b 75 73.50 76.50 2.5 170 0.5 1000 0.1 56 v f forward voltage = 1.0 v maximum @ i f = 100 ma for all types
march 2006 / d page 3 semiconductor tak cheong ? notes: 1. the type numbers listed have zener voltage min/max limits as shown. 2. for detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighte r voltage tolerances, contact your nearest tak cheong electronics representative. 3. the zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current ( i zt or i zk ) is superimposed to i zt or i zk. ordering information device package quantity tcbzx55cxxx tcbzx55bxxx bulk 10,000 tcbzx55cxxxtb tcbzx55bxxxtb tape and ammo 5,000 tcbzx55cxxxtr tcbzx55bxxxtr tape and reel 10,000 tcbzx55cxxx tcbzx55bxxx others (?contact tak cheong sales representatives)
march 2006 / d page 4 semiconductor tak cheong ? package outline package case outline do-35 do-35 millimeters inches dim min max min max a 0.46 0.55 0.018 0.022 b 3.05 5.08 0.120 0.200 c 25.40 38.10 1.000 1.500 d 1.53 2.28 0.060 0.090 notes: 1. all dimensions are within jedec standard. 2. do35 polarity denoted by cathode band.
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