gbpc6005 thru gbpc610 vishay general semiconductor document number: 88613 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 glass passivated single-phase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit boards ? typical i r less than 0.5 a ? high surge current capability ? high case dielectric strength 1500 v rms ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for power supp ly, home appliances, office equipment, industrial automation applications. mechanical data case: gbpc6 epoxy meets ul 94v-0 flammability rating terminals: silver plated lead s, solderable per j-std-002 and jesd22-b102 e4 suffix for consumer grade polarity: as marked, positive lead by belevled corner mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) e4 primary characteristics i f(av) 6 a v rrm 50 v to 1000 v i fsm 175 a i r 5 a v f 1.0 v t j max. 150 c case style gbpc6 ~ ~ ~ ~ notes: (1) bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #6 screw (2) unit mounted on 5.5 x 6.0 x 0.11" thick (14 x 15 x 0.3 cm) aluminum plate (3) unit mounted on p.c.b. at 0.375" (9.5 mm) lead length with 0.5 x 0.5" (12 x 12 mm) copper pads maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gbpc 6005 gbpc 601 gbpc 602 gbpc 604 gbpc 606 gbpc 608 gbpc 610 unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms bridge input voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified output current at t c = 50 c (1)(2) t a = 40 c (3) i f(av) 6.0 3.0 a peak forward surge current single sine-wave superimposed on rated load i fsm 175 a rating for fusing (t < 8.3 ms) i 2 t 127 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
gbpc6005 thru gbpc610 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88613 revision: 15-apr-08 2 notes: (1) bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for ma ximum heat transfer with #6 screw (2) unit mounted on 5.5 x 6.0 x 0.11" thick (14 x 15 x 0.3 cm) aluminum plate (3) unit mounted on p.c.b. at 0.375" (9.5 mm) lead length with 0.5 x 0.5" (12 x 12 mm) copper pads ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gbpc 6005 gbpc 601 gbpc 602 gbpc 604 gbpc 606 gbpc 608 gbpc 610 unit maximum instantaneous forward voltage drop per diode 3.0 a v f 1.0 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 5.0 500 a typical junction capacitance per diode 4.0 v, 1 mhz c j 186 90 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gbpc 6005 gbpc 601 gbpc 602 gbpc 604 gbpc 606 gbpc 608 gbpc 610 unit typical thermal resistance (1) r ja r jc 22 7.3 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gbpc606-e4/51 3.2 51 100 paper box figure 1. derating curve output rectified current 0 50 100 150 0 2.0 4.0 6.0 8 .0 case temperat u re, t c heatsink mo u nting 5.5 x 6.0 x 0.11 " thk. (14 x 15 x 0.3 cm) al. plate 60 hz resisti v e or ind u cti v e load am b ient temperat u re, t a p.c.b. mo u nting 0.375" (9.5 mm) lead length temperat u re (c) figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 50 75 100 125 150 175 200 t j = t j max. single sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1.0 cycle
gbpc6005 thru gbpc610 vishay general semiconductor document number: 88613 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical forward characteristics per diode figure 4. typical reverse leak age characteristics per diode 10 0.4 1.0 1. 8 0.01 0.1 1 100 0.6 0. 8 1.2 1.6 1.4 t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 20 40 60 8 0 100 0.1 1 10 100 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) t j = 100 c t a = 125 c t j = 25 c 1000 figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance per diode 0.1 1 10 100 10 100 1000 50 - 400 v 600 - 1000 v re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.01 0.1 1 10 100 0.1 1 10 100 t - heatin g time (s) transient thermal impedance (c/ w ) case style gbpc6 polarity sho w n on side of case: positi v e lead b y b e v eled corne r 0.750 (19.05) mi n . 0.094 (2.4) x 45 ac ac 0.040 (1.02) typ. 0.200 (5.0 8 ) 0.160 (4.06) 0.445 (11.30) 0.405 (10.29) 0.042 (1.07) 0.03 8 (0.96) dia. 0.12 8 (3.25) 0.04 8 (1.22) 0.445 (11.30) 0.405 (10.29) 0.630 (16.00) 0.590 (14.9 8 ) 0.630 (16.00) 0.590 (14.9 8 ) hole for #6 scre w 0.15 8 (4.01) 0.142 (3.61) dia.
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