agilent msa-0236 cascadable silicon bipolar mmic amplifier data sheet features ? cascadable 50 ? gain block ? 3 db bandwidth: dc to 2.7 ghz ? 12.0 db typical gain at 1.0 ghz ? unconditionally stable (k>1) ? cost effective ceramic microstrip package ? lead-free option available description the msa-0236 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is designed for use as a general purpose 50 ? gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent perfor- mance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. typical biasing configuration c block c block r bias v cc > 7 v v d = 5 v rfc (optional) in out msa 4 1 2 3 36 micro-x package
2 msa-0236 absolute maximum ratings parameter absolute maximum [1] device current 60 ma power dissipation [2,3] 325 mw rf input power +13 dbm junction temperature 150 c storage temperature [4] C65 to 150 c thermal resistance [2,5] : jc = 145 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6.9 mw/ c for t c > 153 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 11.5 12.5 13.5 ? g p gain flatness f = 0.1 to 1.6 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 2.7 input vswr f = 0.1 to 3.0 ghz 1.2:1 output vswr f = 0.1 to 3.0 ghz 1.4:1 nf 50 ? noise figure f = 1.0 ghz db 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 4.5 ip 3 third order intercept point f = 1.0 ghz dbm 17.0 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.5 5.0 5.5 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 18 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 25 ma, z o = 50 ? units min. typ. max. vswr ordering information part numbers no. of devices comments msa-0236-blk 100 bulk msa-0236-blkg 100 bulk msa-0236-tr1 1000 7" reel msa-0236-tr1g 1000 7" reel note: order part number with a g suffix if lead-free option is desired.
3 msa-0236 typical scattering parameters (z o = 50 ? , t a = 25 c, i d = 25 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .08 170 12.6 4.25 176 C18.6 .118 2 .16 C6 0.2 .08 163 12.5 4.23 171 C18.5 .119 2 .15 C10 0.4 .08 147 12.5 4.19 161 C18.4 .120 4 .15 C21 0.6 .08 130 12.4 4.14 152 C18.3 .121 4 .15 C30 0.8 .07 112 12.2 4.09 143 C18.1 .125 7 .15 C39 1.0 .07 91 12.1 4.02 134 C18.0 .126 10 .15 C46 1.5 .06 47 11.6 3.80 112 C17.3 .137 11 .13 C66 2.0 .03 C1 11.0 3.53 91 C16.3 .153 10 .11 C89 2.5 .03 C115 10.2 3.24 75 C15.4 .169 12 .09 C111 3.0 .09 C157 9.3 2.92 57 C15.1 .176 8 .08 C127 3.5 .16 C175 8.3 2.60 39 C14.4 .190 3 .09 C129 4.0 .20 173 7.2 2.29 23 C14.1 .198 C2 .11 C118 5.0 .27 136 5.2 1.81 C6 C13.5 .211 C11 .15 C117 6.0 .41 94 3.2 1.44 C33 C13.5 .212 C24 .11 C148 s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 25 ma. i d (ma) figure 3. power gain vs. current. 4 6 8 10 12 14 0 2 4 6 8 10 12 14 g p (db) 15 25 30 40 35 20 gain flat to dc 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 0 2 4 6 8 10 12 p 1 db (dbm) i d = 40 ma i d = 18 ma i d = 25 ma v d (v) figure 2. device current vs. voltage. 0 10 20 30 40 i d (ma) 023456 1 t c = +125 c t c = +25 c t c = ?5 c 2 3 4 5 6 7 8 11 12 13 7 ?5 ?5 +25 +85 +125 8 6 5 4 3 2 p 1 db (dbm) nf (db) g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. mounting surface temperature, f = 1.0 ghz, i d = 25 ma. nf g p p 1 db 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz i d = 18 ma i d = 25 ma i d = 40 ma
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2005 agilent technologies, inc. obsoletes 5988-4736en april 4, 2005 5989-2738en 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) 36 micro-x package dimensions
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