advanced power p-channel enhancement mode electronics corp. power mosfet fast switching characteristic bv dss -20v lower gate charge r ds(on) 37m small footprint & low profile package i d - 6.2a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice thermal data 201111081 parameter total power dissipation operating junction temperature range storage temperature range 2 -55 to 150 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 -4.9 pulsed drain current 1 -24 halogen-free product 1 AP2613GY-HF rating - 20 + 8 -6.2 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extre mely efficient and cost-effectiveness device. the sot-26 package is widely used for all commercial-indust rial applications. g d s d d d d g s sot-26
AP2613GY-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-4a - 31 37 m v gs =-2.5v, i d =-3a - 42 50 m v gs =-1.8v, i d =-1a - 60 75 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 -0.7 -1 v g fs forward transconductance v ds =-5v, i d =-4a - 15 - s i dss drain-source leakage current v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 8v, v ds =0v - - + 100 na q g total gate charge i d =-4a - 13 21 nc q gs gate-source charge v ds =-10v - 1.7 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4 - nc t d(on) turn-on delay time v ds =-10v - 10 - ns t r rise time i d =-1a - 17 - ns t d(off) turn-off delay time r g =3.3 - 45 - ns t f fall time v gs =-5v - 33 - ns c iss input capacitance v gs =0v - 1050 1680 pf c oss output capacitance v ds =-10v - 180 pf c rss reverse transfer capacitance f=1.0mhz - 160 - pf r g gate resistance f=1.0mhz - 7.3 14.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-4a, v gs =0v, - 27 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 156 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2
AP2613GY-HF 65m fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+08 fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -4a v gs = -4.5v 0 5 10 15 20 25 0 2 4 6 8 10 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -5.0v -4.5v -3.5v -2.5v v g = -1.8v 0 5 10 15 20 25 0 2 4 6 8 10 -v ds , drain-to-source voltage (v) -i d , drain current (a) -5.0v -4.5v -3.5v -2.5v v g = -1.8v t a = 1 5 0 o c 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) i d =-4.2a t a =25 o c 25 35 45 55 65 75 85 95 1 2 3 4 5 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =-1a t a =25 o c i d = -250ua
AP2613GY-HF 65m fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedan ce fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0 2 4 6 8 0 4 8 12 16 20 24 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -4a v ds = -10v 100 300 500 700 900 1100 1300 1 5 9 13 17 21 25 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 156 /w t t 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) 0 1 2 3 4 5 6 7 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) 0 4 8 12 16 20 0 1 2 3 4 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v t j =-40 o c 0.02
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