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insulated gate bipolar transistor with ultrafast soft recovery diode IRGP4063DPBF
1 www.irf.com 04/01/11 e g n-channel c v ces = 600v i c = 48a, t c = 100c t sc 5 s, t j(max) = 175c v ce(on) typ. = 1.65v features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ?5 s short circuit soa ? square rbsoa ? 100% of the parts tested for 4x rated current (i lm ) ? positive v ce (on) temperature co-efficient ? ultra fast soft recovery co-pak diode ? tight parameter distribution ? lead free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi g c e gate collector emitter g c e to-247ac c absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 96 i c @ t c = 100c continuous collector current 48 i cm pulse collector current 144 i lm clamped inductive load current 192 a i f @ t c = 25c diode continous forward current 96 i f @ t c = 100c diode continous forward current 48 i fm diode maximum forward current 192 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 330 w p d @ t c = 100c maximum power dissipation 170 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.45 c/w r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 0.92 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ???
IRGP4063DPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 200 h, r g = 10 . this is only applied to to-247ac package. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 150 a ct6 v (br)ces / t j temperature coeff. of breakdown voltage ?0.30?v/c v ge = 0v, i c = 1ma (25c-175c) ct6 ?1.652.14 i c = 48a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter saturation voltage ? 2.0 ? v i c = 48a, v ge = 15v, t j = 150c 9,10,11 ?2.05? i c = 48a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 1.4ma 9, 10, v ge(th) / tj threshold voltage temp. coefficient ? -21 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) 11, 12 gfe forward transconductance ? 32 ? s v ce = 50v, i c = 48a, pw = 80 s i ces collector-to-emitter leakage current ? 1.0 150 a v ge = 0v, v ce = 600v ? 450 1000 v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.95 2.91 v i f = 48a 8 ?1.45? i f = 48a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 95 140 i c = 48a 24 q ge gate-to-emitter charge (turn-on) ? 28 42 nc v ge = 15v ct1 q gc gate-to-collector charge (turn-on) ? 35 53 v cc = 400v e on turn-on switching loss ? 625 1141 i c = 48a, v cc = 400v, v ge = 15v ct4 e off turn-off switching loss ? 1275 1481 j r g = 10 , l = 200 h, l s = 150nh, t j = 25c e total total switching loss ? 1900 2622 energy losses include tail & diode reverse recovery t d(on) turn-on delay time ? 60 78 i c = 48a, v cc = 400v, v ge = 15v ct4 t r rise time ? 40 56 ns r g = 10 h, l s = 150nh, t j = 25c t d(off) turn-off delay time ? 145 176 t f fall time ? 35 46 e on turn-on switching loss ? 1625 ? i c = 48a, v cc = 400v, v ge =15v 13, 15 e off turn-off switching loss ? 1585 ? j r g =10 h, l s =150nh, t j = 175c ct4 e total total switching loss ? 3210 ? energy losses include tail & diode reverse recovery wf1, wf2 t d(on) turn-on delay time ? 55 ? i c = 48a, v cc = 400v, v ge = 15v 14, 16 t r rise time ? 45 ? ns r g = 10 , l = 200 h, l s = 150nh ct4 t d(off) turn-off delay time ? 165 ? t j = 175c wf1 t f fall time ? 45 ? wf2 c ies input capacitance ? 3025 ? pf v ge = 0v 23 c oes output capacitance ? 245 ? v cc = 30v c res reverse transfer capacitance ? 90 ? f = 1.0mhz t j = 175c, i c = 192a 4 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 10 , v ge = +15v to 0v scsoa short circuit safe operating area 5 ? ? s v cc = 400v, vp =600v 22, ct3 rg = 10 , v ge = +15v to 0v wf4 erec reverse recovery energy of the diode ? 845 ? j t j = 175c 17, 18, 19 t rr diode reverse recovery time ? 115 ? ns v cc = 400v, i f = 48a 20, 21 i rr peak reverse recovery current ? 40 ? a v ge = 15v, rg = 10 h, l s = 150nh wf3 conditions
IRGP4063DPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 25 50 75 100 125 150 175 200 t c (c) 0 10 20 30 40 50 60 70 80 90 100 i c ( a ) 0 25 50 75 100 125 150 175 200 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc
IRGP4063DPBF 4 www.irf.com fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 8 - typ. diode forward characteristics tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 9 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 v f (v) 0 20 40 60 80 100 120 140 160 180 200 i f ( a ) -40c 25c 175c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 0 5 10 15 v ge (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) t j = 25c t j = 175c
IRGP4063DPBF www.irf.com 5 fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 48a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 48a; v ge = 15v fig. 17 - typ. diode i rr vs. i f t j = 175c fig. 18 - typ. diode i rr vs. r g t j = 175c 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 rg ( ) 1000 1500 2000 2500 3000 3500 4000 4500 5000 e n e r g y ( j ) e off e on 0 25 50 75 100 125 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 i f (a) 0 5 10 15 20 25 30 35 40 45 i r r ( a ) r g = 10 r g = 22 r g = 47 r g = 100 0 25 50 75 100 125 r g ( ) 10 15 20 25 30 35 40 45 i r r ( a ) 0 50 100 150 i c (a) 0 1000 2000 3000 4000 5000 6000 e n e r g y ( j ) e off e on
IRGP4063DPBF 6 www.irf.com fig. 19 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 48a; t j = 175c fig. 20 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 48a; l = 600 h fig. 21 - typ. diode e rr vs. i f t j = 175c fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 0 200 400 600 800 1000 di f /dt (a/ s) 10 15 20 25 30 35 40 45 i r r ( a ) 0 20 40 60 80 100 i f (a) 0 100 200 300 400 500 600 700 800 900 e n e r g y ( j ) r g = 10 r g = 22 r g = 47 r g = 100 8 1012141618 v ge (v) 4 6 8 10 12 14 16 18 t i m e ( s ) 50 100 150 200 250 300 350 400 c u r r e n t ( a ) 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 255075100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v 0 500 1000 1500 di f /dt (a/ s) 1000 1500 2000 2500 3000 3500 4000 q r r ( n c ) 10 22 100 47 48a 24a 96a
IRGP4063DPBF www.irf.com 7 fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 0.020330 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.2774 0.000908 0.3896 0.003869 0.2540 0.030195 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri
IRGP4063DPBF 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v dc 4x dut vcc r sh
IRGP4063DPBF www.irf.com 9 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -40 -30 -20 -10 0 10 20 30 40 50 60 -0.15 -0.05 0.05 0.15 0.25 time (s) i rr (a) peak i rr q rr t rr 10% peak i rr -100 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 time (s) v ce (v) -100 0 100 200 300 400 500 600 i ce (a) v ce i ce -100 0 100 200 300 400 500 600 700 -0.40 0.10 0.60 1.10 time(s) v ce (v) -20 0 20 40 60 80 100 120 140 i ce (a) e off loss 5% v ce 5% i ce 90% i ce tf -100 0 100 200 300 400 500 600 700 6.20 6.40 6.60 6.80 7.00 time (s) v ce (v) -20 0 20 40 60 80 100 120 140 i ce (a) e on test current 90% test 10% test current 5% v ce tr
IRGP4063DPBF 10 www.irf.com ir world headquarters: 101 n. sepulveda blvd.., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/11 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-247ac package is not recommended for surface mount application.

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