silicon double balanced hmic? mixer MA4EX180L-1225 m/a-com division of amp incorporated n north america: tel. (800) 366-2266, fax (800) 618-8883 n asia/pacific: tel.+85 2 211 1 8088, fax +85 2 2111 8087 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 features low cost miniature plastic package low conversion loss: 6.5 db at 1550 mhz 7.5 db at 1800 mhz +3 to +7 dbm lo drive hmic? process silicon low barrier schottky diodes dc -400 mhz if bandwidth description m/a-coms MA4EX180L-1225 is a silicon monolithic 1300 - 1900 mhz double balanced mixer in a low cost miniature surface mount sot-25 package. the dies uses m/a-coms unique hmic? silicon/glass process to achieve low loss passive ele- ments while retaining the advantages of low barrier silicon schot- tky diodes. applications these mixers are well suited for high volume wireless applications where small size and repeatability are required. typical applica- tions include frequency conversion, modulation, and demodula- tion for receivers and transmitters in both portable pcs and base station applications. sot-25 outline pin configuration electrical specifications @ +25c silicon double balanced hmic? mixer 1300 - 1900 mhz MA4EX180L-1225 pin function pin function 1gnd4 rf 2gnd5 lo 3if ordering information model no. package MA4EX180L-1225 bulk MA4EX180L-1225t tape and reel 1 2 3 5 4 parameter frequency range test conditions units min. typ. max. conversion loss 1550 mhz 1300-1900 mhz lo drive = +5 dbm, f lo = f rf + f if rf = -10 dbm, if = 60 mhz db db 6.5 7.5 7.5 9.0 l - r isolation 1550 mhz 1300-1900 mhz lo drive = +5 dbm rf level = -10 dbm db db 18 21 15 l - i isolation 1550 mhz 1300-1900 mhz lo drive = +5 dbm rf level = -10 dbm db db 23 22 r - i isolation 1550 mhz 1300-1900 mhz lo drive = +5 dbm rf level = -10 dbm db db 17 16 lo vswr 1550 mhz 1300-1900 mhz lo drive = +5 dbm rf level = -10 dbm 2.0 2.2 rf vswr 1550 mhz 1300-1900 mhz lo drive = +5 dbm rf level = -10 dbm 1.3 2.0 if vswr dc - 400 mhz lo drive = +5 dbm if level = -10 dbm 1.5 input ip3 1550 mhz 1300-1900 mhz lo drive = +5 dbm, tone scaling = 10 mhz if = 60 mhz, f rl = f lo -f if dbm dbm 9.0 9.0 +10.5 +12.0 input 1 db compression 1550 mhz 1300-1900 mhz lo drive = +5 dbm if = 60 mhz dbm dbm +1.4 +1.9 if 1 db bandwidth 0-400 mhz lo = 1500 mhz @ +5 dbm mhz 400
silicon double balanced hmic? mixer MA4EX180L-1225 m/a-com division of amp incorporated n north america: tel. (800) 366-2266, fax (800) 618-8883 n asia/pacific: tel.+85 2 211 1 8088, fax +85 2 2111 8087 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 case style 0 5 10 15 20 25 30 1300 1400 1500 1600 1700 1800 1900 frequency (m hz) isolation (db) 4 6 8 10 12 14 16 1300 1450 1600 1750 1900 frequency (m hz) absolute power (dbm) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1300 1400 1500 1600 1700 1800 1900 frequency (mhz) vswr 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 frenquency (m hz) loss (db) absolute maximum rating 1 parameter maximum ratings operating temperature -40c to +85c storage temperature -65c to +150c incident lo power +20 dbm incident rf power +20 dbm 1. exceeding these limits may cause permanent damage. typical performance curves conversion loss isolation typical vswr third order intercept point (lo drive = +5 dbm, rf = -10 dbm, if = 60 mhz) r-i l-r l-i rf vswr lo vswr if vswr schematic rf if lo sot-25 sot-25 1,2 h c e typ. 5 x f b d g j a inches millimeters dim min max min max a 0.1103 0.1181 2.8 3.10 b 0.1023 0.1181 2.6 3.00 c 0.0355 0.0512 0.9 1.30 d 0.0591 0.0669 1.5 1.7 e 0.0374 typ. 0.95 typ. f 0.0138 0.0197 0.35 0.5 g 0.0031 0.0079 0.08 0.20 h 0.0020 0.0059 0.05 0.15 j 0.0138 0.0216 0.35 0.55 1. dimensions do not include mold flash, protrusion or gate burrs which shall not exceed 0.0098 in (.25mm) per side. 2. lead coplanarity is 0.003 (0.08) max.
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