silicon double balanced hmic? mixer chip MA4EX180L m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 chip layout electrical specifications @ +25c silicon double balanced hmic? mixer chip 1300 - 1900 mhz MA4EX180L features ? fully monolithic mixer chip ? 6.6 db typical conversion loss at 1600 mhz ? +3 to +7 dbm lo drive ? dc ? 500 mhz if bandwidth ? silicon low barrier schottky diodes ? rugged, glass encapsulated description m/a-com?s MA4EX180L is a silicon monolithic double balanced mixer. the circuit uses m/a-com?s unique hmic ? silicon/glass process to achieve low loss passive elements while retaining the advantages of low barrier silicon schottky diodes. the die is fully passivated with an additional polymer layer for scratch protection. applications m/a-com has designed these mixers for use in high volume wireless and cellular applications where small size and repeatability are required. typical applications include frequency conversion, modulation and demodulation for receivers and transmitters in both portable cellular and base station applications. parameters freq range test conditions units min. typ. max. conversion loss 1600 mhz 1300 - 1900 mhz lo drive = +5 dbm rf = -10 dbm, if = 60 mhz db db ? ? 6.6 8.5 ? ? lo - rf isolation 1600 mhz 1300 - 1900 mhz lo drive = +5 dbm rf level = -10 dbm db db ? ? 39 36 ? ? lo - if isolation 1600 mhz 1300 - 1900 mhz lo drive = +5 dbm rf level = -10 dbm db db ? ? 35 34 ? ? lo vswr 1600 mhz 1300 - 1900 mhz lo drive = +5 dbm rf level = -10 dbm ? ? 1.9 2.8 ? ? rf vswr 1600 mhz 1300 - 1900 mhz lo drive = +5 dbm rf level = -10 dbm ? ? 1.2 3.0 ? ? if vswr dc - 500 mhz lo drive = +5 dbm @ 1365mhz if level = -10 dbm ? ? 1.6 ? ? input ip3 1600 mhz 1300 - 1900 mhz lo drive = +5 dbm if = 60 mhz dbm dbm ? ? +9.0 +8.0 ? ? input 1 db compression 1600 mhz 1300 - 1900 mhz lo drive = +5 dbm if = 60 mhz dbm dbm ? ? +1.4 +1.4 ? ? if 1 db bandwidth mhz 0 400 ?
silicon double balanced hmic ? mixer chip MA4EX180L m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 absolute maximum rating 1 1. exceeding these limits may cause permanent damage. typical performance curves conversion loss input ip3 isolation conversion loss with lo drive level variation (lo drive = +5 dbm, rf = -10 dbm, if = 60 mhz) -8.6 -8.4 -8.2 -8.0 -7.8 -7.6 -7.4 -7.2 -7.0 -6.8 -6.6 -6.4 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 rf frequency (mhz) conversion loss (db) -9.0 -8.5 -8.0 -7.5 -7.0 -6.5 -6.0 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 rf frequency (mhz) conversion loss (db) lo = 7dbm lo = 5dbm lo = 3dbm -70 -60 -50 -40 -30 -20 -10 0 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 rf frequency (mhz) isolation (db) lo to if lo to rf return loss 0 2 4 6 8 10 12 14 16 18 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 rf frequency (mhz) input ip 3 (dbm) -35 -30 -25 -20 -15 -10 -5 0 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 rf frequency (mhz) return loss (db) lo port rf port parameter maximum ratings operating temperature -40 c to +85 c storage temperature -65 c to +150 c incident lo power +20 dbm incident rf power +20 dbm mounting temperature +235 c for 10 seconds
silicon double balanced hmic ? mixer chip MA4EX180L m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00 handling and mounting information cleanliness the die should be handled in a clean environment. do not attempt to clean die after installation. electro-static sensitivity the schottky barrier diodes in these mixers can be damaged by static electricity. standard methods for the control of electrostatic discharge should be used. all chip handling equipment and personnel should be dc grounded. mounting the dice have ti-pt-au back metal, with a final gold thickness of 1 micron. they can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. the mounting surface must be clean and flat. eutectic die attachment we recommend an 80/20 gold-tin eutectic solder preform with a work surface temperature of 255 c and a tool tip temperature of 265 c. when hot gas is applied, the tool tip temperature should be 290 c. the chip should not be exposed to temperatures greater than 320 c for more than 20 seconds. no more than three seconds should be required for attachment. epoxy die attachment assembly should be preheated to 125-150 c. a minimum amount of epoxy should be used. a thin epoxy fillet should be visible around the perimeter of the chip after placement. cure epoxy per manufacturer ? s schedule. wire bonding the three bond pads on these die have a ti-pt-au metalization scheme, with a final gold thickness of 2.5 microns. the pads are 100 x 125 microns. thermosonic wedge wire bonding of 0.001 ? diameter gold wire is recommended with a stage temperature of 150 c and a force of 18 to 22 grams. ultrasonic energy should be adjusted to the minimum required. inches millimeters dim min max min max a .047 .051 1.21 1.29 b .039 .043 1.00 1.08 c .004 .006 .100 .150 d .004 ref. .100 ref. e .004 ref. .100 ref. f .016 ref. .420 ref. g .021 ref. .530 ref. h .004 ref. .100 ref. j .005 ref. .125 ref k .019 ref. .490 ref. 1. hatched areas indicate wire bonding pads. 2. bond pad material au. 3. backside metal au. lo if rf chip oultline drawing (od-s-1236) 1,2,3 schematic
silicon double balanced hmic ? mixer chip MA4EX180L m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v2.00
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