e l ek tr on isch e b a u e lemen te SMG3407 - 4 .1a, -30 v ,r ds(on) 52m p-channel enhancement mode power mos.fet [ description the device is suitable for use as a load switch or in pwm applications. provide excellent on-resistance with low gate change. the smg 3407 uses advanced trench technology to features dim min max a 2.70 3.10 b 1. 4 0 1. 6 0 c 1.00 1.30 d 0.35 0.50 g 1.70 2. 1 0 h 0.00 0.10 j 0.10 0.26 k 0. 2 0 0. 6 0 l 0.85 1. 1 5 s 2. 40 2.8 0 all dimension in mm sc-59 http://www.secosgmbh.com/ any changing of specification will not be informed individual s g d b l a 1 3 2 top view h c j k gate source drain d g s 01 -jun-2002 rev. a page 1 of 4 rohs compliant product * small package outline * rohs compliant * low er gate charge a b s o l u t e m a x i m u m r a t i n g s p a r a m e t e r s y m b o l r a t i n g s u n i t d r a i n - s o u r c e v o l t a g e v d s - 3 0 v g a t e - s o u r c e v o l t a g e v g s 2 0 v c o n t i n u o u s d r a i n c u r r e n t 3 i d @ t a = 2 5 : - 4 . 1 a c o n t i n u o u s d r a i n c u r r e n t 3 i d @ t a = 7 0 : - 3 . 5 a p u l s e d d r a i n c u r r e n t 1 i d m - 2 0 a p o w e r d i s s i p a t i o n p d @ t a = 2 5 : 1 . 3 8 w l i n e a r d e r a t i n g f a c t o r 0 . 0 1 w / : o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e t j , t s t g - 5 5 ~ + 1 5 0 : t h e r m a l d a t a p a r a m e t e r s y m b o l r a t i n g s u n i t t h e r m a l r e s i s t a n c e j u n c t i o n - a m b i e n t 3 m a x . r t h j - a 9 0 : / w free datasheet http:///
h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l 01 -jun-2002 rev. a page 2 of 4 e l ek tr on isch e b a u e lemen te SMG3407 - 4 .1 a, -30 v ,r ds(on) 5 2 m p-channel enhancement mode power mos.fet [ e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 : : : : u n l e s s o t h e r w i s e s p e c i f i e d ) p a r a m e t e r s y m b o l m i n . t y p . m a x . u n i t t e s t c o n d i t i o n s d r a i n - s o u r c e b r e a k d o w n v o l t a g e b v d s s - 3 0 - - v v g s = 0 , i d = - 2 5 0 u a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) - 1 . 0 - - 3 . 0 v v d s = v g s , i d = - 2 5 0 u a f o r w a r d t r a n s c o n d u c t a n c e g f s - 8 . 2 - s v d s = - 5 v , i d = - 4 a g a t e - s o u r c e l e a k a g e c u r r e n t i g s s - - 1 0 0 n a v g s = 2 0 v d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 : ) - - - 1 u a v d s = - 3 0 v , v g s = 0 d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 5 5 : ) i d s s - - - 5 u a v d s = - 2 4 v , v g s = 0 - - 5 2 v g s = - 1 0 v , i d = - 4 . 1 a s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) - - 8 7 m v g s = - 4 . 5 v , i d = - 3 . 0 a t o t a l g a t e c h a r g e 2 q g - 7 - g a t e - s o u r c e c h a r g e q g s - 3 . 1 - g a t e - d r a i n ( m i l l e r ) c h a n g e q g d - 3 - n c i d = - 4 a v d s = - 1 5 v v g s = - 4 . 5 v t u r n - o n d e l a y t i m e 2 t d ( o n ) - 8 . 6 - r i s e t i m e t r - 5 - t u r n - o f f d e l a y t i m e t d ( o f f ) - 2 8 . 2 - f a l l t i m e t f - 1 3 . 5 - n s v d s = - 1 5 v v g s = - 1 0 v r g = 3 r l = 3 . 6 i n p u t c a p a c i t a n c e c i s s - 7 0 0 8 4 0 o u t p u t c a p a c i t a n c e c o s s - 1 2 0 - r e v e r s e t r a n s f e r c a p a c i t a n c e c r s s - 7 5 - p f v g s = 0 v v d s = - 1 5 v f = 1 . 0 m h z g a t e r e s i s t a n c e r g - 1 0 - f = 1 . 0 m h z s o u r c e - d r a i n d i o d e p a r a m e t e r s y m b o l m i n . t y p . m a x . u n i t t e s t c o n d i t i o n s f o r w a r d o n v o l t a g e 2 v s d - - - 1 . 0 v i s = - 1 . 0 a , v g s = 0 v r e v e r s e r e c o v e r y t i m e 2 t r r - 2 7 - n s r e v e r s e r e c o v e r y c h a r g e q r r - 1 5 - n c i s = - 4 a , v g s = 0 v d i / d t = 1 0 0 a / s c o n t i n u o u s s o u r c e c u r r e n t ( b o d y d i o d e ) i s - - - 2 . 2 a v d = v g = 0 v , v s = - 1 . 0 v n o t e s : 1 . p u l s e w i d t h l i m i t e d b y m a x . j u n c t i o n t e m p e r a t u r e . 2 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . 3 . s u r f a c e m o u n t e d o n 1 i n 2 c o p p e r p a d o f f r 4 b o a r d ; 2 7 0 / w w h e n m o u n t e d o n m i n . c o p p e r p a d . :
01-jun-2002 rev. a page 3 of 4 c h a r a c t e r i s t i c s c u r v e f i g 1. t yp i c al o u t p u t c h ar ac t e r i s t i c s f i g 2. t yp i c al o u t p u t c h ar ac t e r i s t i c s f i g 3. o n - r e s i s t an c e v . s . g a t e v ol t age fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature fig 5. forward characteristics of reverse diode http://www.secosgmbh.com/ any changing of specification will not be informed individual e l ek tr on isch e b a u e lemen te SMG3407 - 4 .1 a, -30 v ,r ds(on) 5 2 m p-channel enhancement mode power mos.fet [ 0 . 0 0 0 0 0 1 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 0 1
01 -jun-2002 rev. a page 4 of 4 http://www.secosgmbh.com/ any changing of specification will not be informed individual elektronische bauelemente SMG3407 -4 .1 a, -30v,r ds(on) 52 m p-channel enhancement mode power mos.fet [ f i g 7 . m a x i m u m s a f e o p e r a t i n g a r e a f i g 8 . s i n g l e p u l s e p o w e r r a t i n g j u n c t i o n - t o - a m b i e n t v . s . j u n c t i o n t e m p e r a t u r e f i g 9 . g a t e c h a r g e c h a r a c t e r i s t i c s f i g 1 0 . t y p i c a l c a p a c i t a n c e c h a r a c t e r i s t i c s f i g 1 1 . n o r m a l i z e d m a x i m u m t r a n s i e n t t h e r m a l i m p e d a n c e
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