solid state devices, inc. sft5333a features: data sheet #: tr0054b maximum ratings symbol units value v ebo 6 volts emitter-base voltag e v cbo 100 volts collector-base voltag e i c 2 collector current collector-emitter voltag e v ceo 70 amps volts o c w mw/ o c o c/w ? radiation tolerant ? fast switching, 150ns max t(on) ? high frequency, ft 85mhz min. ? bvceo 70volts min. ? low saturation voltage. ? 200 o c operating, gold eutectic die attach. ? designed for complementary use with sft4300a. to-5 2 amp 100 volts high speed pnp transistor operating and storage temperature t j, t stg -65 to +200 15 150 thermal resistance, junction to case r q q jc 6.6 total device dissipation @ t c =100 o c derate above 100 o c p d i b 1 base current amps electrical characteristics symbol units min max v 70 - bv ceo collector-emitter breakdown voltage (i c =30ma dc ) v 100 - collector-base breakdown voltage (i c =200ua dc ) v 6 - bv ebo emitter-base breakdown voltage (i e =200ua dc ) m m a m m a - 1 75 i cbo collector cutoff current (v cb =90v dc, t c =25 o c) (v cb =90v dc , t c =100 o c) m m a - 5 i ceo collector cutoff current (v ce =40v dc ) bv cbo designer's data sheet 14830 valley view avenue * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release.
solid state devices, inc. sft5333a case outline: to-5 14830 valley view avenue * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 min max electrical characteristics symbol units m m a emitter cutoff current (v eb =6v dc ) - i ebo 1 250 dc current gain * (i c =1.0a dc , v ce =5v dc ) (i c =2.0a dc , v ce =5v dc ) 40 40 0.45 1.0 collector-emitter saturation voltage * (i c =1.0a dc , i b =100ma dc ) (i c =2.0a dc , i b =200ma dc ) v ce(sat) v dc h fe base-emitter voltage * (i c =2.0a dc , v ce =4v dc ) - 1.5 v dc v be (on) current gain bandwidth product (i c =1.0a dc , v ce =10v dc, f =10mhz) 85 - mhz ft 75 pf output capacitance (v cb =30v dc , i e =0a dc, f =1.0mhz) - c ob 300 pf input capacitance (v be =6v dc , i c =0a dc, f =1.0mhz) - c ib (v cc =20v dc , i c =1.0a dc , v eb(off) =3.7v dc , i b1 =i b2 =100ma dc , r l =20 ohms) turn off time * pulse test: pulse width = 300us, duty cycle = 2% t (on) 150 ns t (off) 450 ns turn on time pin 1: emitter pin 3: collector pin 2: base
|
