? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 280 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 280 v v gs continuous 20 v v gsm transient 25 v i d25 t c = 25 c82a i d25 external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 240 a dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque (to-3p) 1 .13/10 nm/lb.in. weight 5.5 g g = gate d = drain s = source tab = drain ds99302(01/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 280 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 1 a v gs = 0 v t j = 125 c 200 a r ds(on) v gs = 10 v, i d = 0.5 i d25 49 m ? pulse test, t 300 s, duty cycle d 2 % trenchgate power mosfet v dss = 280 v i d25 =82 a r ds(on) =44 m ? ? ? ? ? n-channel enhancement mode for plasma display application features z trench gate construction for low r ds(on) z international standard package z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-3p (ixtq) g d s (tab) advance technical infomation ixtq82n28t
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 82n28t symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 40 68 s c iss 5326 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 609 pf c rss 38 pf t d(on) 33 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 60 ns t d(off) r g = 4 ? (external) 46 ns t f 46 ns q g(on) 156 180 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 46 nc q gd 43 nc r thjc 0.23 k/w r thck 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 82 a i sm repetitive 240 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t jm i f = 25 a 250 ns -di/dt = 100 a/ s q rm v r = 100 v 3.0 c to-3p (ixtq) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2005 ixys all rights reserved ixtq 82n28t fig. 2. extended output characteristics @ 25 o c 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 01 23 456 78 910 v d s - volts i d - amperes v gs = 10v 8v 7v 4.5v 5v 5.5v 6v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 00.511.522.533.544.5 v d s - volts i d - amperes v gs = 10v 8v 7v 5.5v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 82a i d = 41a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 125 o c
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 82n28t fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 135v i d = 41a i g = 10ma fi g. 7 . i npu t ad m itt ance 0 20 40 60 80 100 120 140 160 180 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fi g. 8 . t ranscon d uc t ance 0 10 20 30 40 50 60 70 80 90 100 110 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 25 50 75 100 125 150 175 200 225 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 o c t c = 25 o c r ds(on) limit 10ms 25s
? 2005 ixys all rights reserved ixtq 82n28t fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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