schottky diodes built on submicron trench technology feature maximum junction temperature to + 175 c and low reverse leakage down to 3 ma key bene f i ts ? t j max = 175 c ? very low forward voltage drop (v f max: 0.530 v at 20 a, 125 c) ? extremely low reverse leakage (i r max: 7 ma at 45 v, 125 c) ? optimized v f vs. i r trade-off for high effciency ? increased ruggedness for reverse avalanche capability appl i cat i o n s ? pv cell bypass diodes ? high-effciency smps ? automotive aec-q101 qualifed ? high-frequency switching ? output rectifcation ? reverse battery protection datasheet is available on our web site at www.vishay.com for 20wt04fn - http://www.vishay.com/doc?94573 p r o d u c t s h e e t d i o d e s w w w . v i s h a y . c o m hig h -pe rforma n c e g en 5.0 s chottk y di od e s 20w t0 4fn v i s h a y i n t e r t e c h n o l o g y, i n c .
document number: 94573 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 20-jan-09 1 high performance schottky generation 5.0, 20 a 20UT04, 20wt04fn vishay high power products note (1) measured connecting 2 anode pins features ? 175 c high performance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? full lead (pb)-free and rohs compliant devices ? qualified for aec q101 applications ? specific for pv cells bypass diode ? high efficiency smps ? automotive ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc-to-dc systems ? increased power density systems product summary i f(av) 20 a v rrm 45 v maximum v f at 20 a at 125 c (1) 0.530 v i-pak (to-251aa) 20UT04 20wt04fn d-pak (to-252aa) base cathode anode anode cathode 4 3 2 1 base cathode anode anode cathode 4 3 2 1 major ratings and characteristics symbol characteristics values units v rrm 45 v v f 20 apk, t j = 125 c (typical, measured c onnecting 2 anode pins) 0.480 v t j range - 55 to 175 c voltage ratings parameter symbol test conditions 20UT04 20wt04fn units maximum dc reverse voltage v r t j = 25 c 45 v www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94573 2 revision: 20-jan-09 20UT04, 20wt04fn vishay high power products high performance schottky generation 5.0, 20 a note (1) measured connecting 2 anode pins notes (1) pulse width < 300 s, duty cycle < 2 % (2) only 1 anode pin connected absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 153 c, rectangular waveform 20 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied (1) 900 a 10 ms sine or 6 ms rect. pulse 220 non-repetitive avalanche energy e as t j = 25 c, i as = 7 a, l = 4.4 mh 108 mj repetitive avalanche current i ar limited by frequency of operation and time pulse duration so that t j < t j max. i as at t j max. as a function of time pulse i as at t j max. a electrical specifications parameter symbol test conditions typ. max. units forward voltage drop v fm (1, 2) 10 a t j = 25 c 0.505 0.540 v 20 a 0.570 0.610 10 a t j = 125 c 0.415 0450 20 a 0.520 0.580 reverse leakage current i rm (1) t j = 25 c v r = rated v r - 100 a t j = 125 c - 7 ma junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 1900 - pf series inductance l s measured lead to lead 5 mm from package body - - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case r thjc dc operation 1.2 c/w typical thermal resistance, case to heatsink r thcs 0.3 approximate weight 2 g 0.07 oz. marking device case style i-pak 20UT04 case style d-pak 20wt04fn ' p s u f d i o j d b m r v f t u j p o t
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