2sa1773 / 2sc4616 no.3399-1/5 features large current capacity (i c =2a). high breakdown voltage (v ceo 400v). specifications ( ) : 2sa1773 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)400 v collector-to-emitter voltage v ceo (--)400 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)2 a collector current (pulse) i cp (--)4 a collector dissipation p c 1w t c =25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)300v, i e =0a (--)1.0 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1.0 a dc current gain h fe v ce =(--)10v, i c =(--)100ma 40* 200* gain-bandwidth product f t v ce =(--)10v, i c =(--)100ma (40)60 mhz output capacitance cob v cb =(--)30v, f=1mhz (25)15 pf continued on next page. * : the 2sa1773 / 2sc4616 are classified by 100ma h fe as follws: rank c d e h fe 40 to 80 60 to 120 100 to 200 www.semiconductor-sanyo.com/network ordering number : en3399d 80509cb tk im tc-00002035 / 93003tn (kt)/83198ha (kt)/30395ts/12894th ax-8287/d251mh/5300ta (koto) x-6470, 6459 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 2sa1773 / 2sc4616 2sa1773 : pnp epitaxial planar silicon transistor 2sc4616 : npn triple diffused planar silicon transistor high-voltage driver applications
2sa1773 / 2sc4616 no.3399-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation voltage v ce (sat) i c =(--)500ma, i b =(--)50ma (--)1.0 v base-to-emitter saturation voltage v be (sat) i c =(--)500ma, i b =(--)50ma (--)1.0 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)400 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)400 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)5 v turn-on time t on see specified test circuit. (0.12)0.085 s strage time t stg see specified test circuit. (3.0)4.0 s fall time t f see specified test circuit. (0.3)0.6 s package dimensions package dimensions unit : mm (typ) unit : mm (typ) 7518-003 7003-003 switching time test circuit 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-fa v r r l v ce =150v v be =--5v i c =10i b1 = --10i b2 =500ma r l =300 , r b =20 , at i c =500ma for pnp, the polarity is reversed. + + 50 input output r b 100 f 470 f pw=20 s i b1 d.c. 1% i b2
2sa1773 / 2sc4616 no.3399-3/5 gain-bandwidth product, f t -- mhz f t -- i c f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz collector current, i c -- ma dc current gain, h fe h fe -- i c collector current, i c -- ma collector current, i c -- ma dc current gain, h fe h fe -- i c i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma 2sa1773 v ce =--10v ta=75 c --25 c --2.0 --1.6 --1.2 --0.4 --0.8 --1.8 --1.4 --1.0 --0.2 --0.6 0 2.0 1.6 1.2 0.4 0.8 1.8 1.4 1.0 0.2 0.6 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.2 --1.0 itr04607 2sc4616 v ce =10v itr04608 25 c ta=75 c --25 c 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 25 c i b =0ma itr04606 --200 --160 --120 --80 --40 0 0 --4 --8 --12 --16 --20 200 160 120 80 40 0 048121620 i b =0ma --0.2ma --0.4ma --0.6ma --0.8ma --1.0ma --1.2ma --1.4ma --1.6ma --1.8ma --2.0ma 2sa1773 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma 2sc4616 itr04605 2sa1773 v ce =--10v 3 100 10 2 7 5 7 5 3 2 7 5 325 3 --10 7 --100 25 37 --1000 7 5 325 3 10 7 100 25 37 1000 itr04611 2sc4616 v ce =10v 3 100 10 2 7 5 7 5 3 2 itr04612 ta=75 c --25 c 2sa1773 v ce =--10v itr04609 100 7 7 5 3 5 3 2 3 2 10 7 7 7 5 --1000 --10 3 3253 23 2 5 --100 100 7 7 5 3 5 3 2 3 2 10 7 7 7 5 1000 10 3 3253 23 2 5 100 ta=75 c -- 2 5 c 25 c 2sc4616 v ce =10v itr04610 25 c
2sa1773 / 2sc4616 no.3399-4/5 v be (sat) -- i c collector current, i c -- ma collector current, i c -- ma collector current, i c -- ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- ma v ce (sat) -- i c v be (sat) -- i c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v cob -- v cb cob -- v cb output capacitance, cob -- pf switching time, sw time -- s sw time -- i c collector current, i c -- ma switching time, sw time -- s sw time -- i c ta=75 c 25 c --25 c 2sc4616 i c / i b =10 --10 --100 23 5 35 2357 7 7 --1000 --1.0 7 5 3 3 3 2 2 7 5 --0.1 1.0 7 5 3 3 3 2 2 7 5 0.1 10 100 23 5 35 2357 7 7 1000 ta= 75 c 25 c --25 c itr04615 itr04616 2sa1773 i c / i b =10 2 2323 7 --10 35 5 7 --100 7 --1000 2 2 3 7 7 5 2 3 7 5 3 5 10 1.0 0.1 2 2 3 7 7 5 2 3 7 5 3 5 10 1.0 0.1 itr04613 2sa1773 v cc =--150v 10i b1 =--10i b2 =i c t stg t on t f 2 2323 57 10 35 5 7 100 7 1000 itr04614 2sc4616 v cc =150v 10i b1 =--10i b2 =i c t stg t on t f --10 --1.0 --10 --100 --1000 ta=--25 c 75 c 3 3 2 7 5 7 5 10 1.0 3 3 2 7 5 7 5 35 2357 2357 7 10 100 1000 3 5 2 3 57 2 3 57 7 2sa1773 i c / i b =10 itr04617 25 c ta=--25 c 75 c itr04618 25 c 2sc4616 i c / i b =10 itr04620 3 2 3 2 7 5 7 5 10 100 3 2 3 3 2 7 5 7 5 10 100 --1.0 37 73 2 --10 22 7 --100 55 1.0 37 73 2 10 22 7 100 55 itr04619 2sa1773 f=1mhz 2sc4616 f=1mhz
2sa1773 / 2sc4616 no.3399-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of august, 2009. specifications and information herein are subject to change without notice. collector-to-emitter voltage, v ce -- v a s o collector current, i c -- ma collector-to-emitter voltage, v ce -- v a s o collector current, i c -- ma collector dissipation, p c -- w case temperature, tc -- c 0 18 15 10 12 14 16 8 6 4 2 20 060 40 80 100 140 120 160 p c -- tc collector dissipation, p c -- w ambient temperature, ta -- c 0 1.2 1.0 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 p c -- ta no heat sink --1000 5 7 3 2 --100 5 7 3 2 5 7 3 2 5 7 3 2 --10 --1.0 --1.0 --0.1 25 37 --10 25 37 --100 25 37 25 3 10ms dc operation (ta=25 c) dc operation (tc=25 c) 1ms i c = --2a itr04621 2sa1773 it14853 itr04624 itr04623 1.0 0.1 25 37 10 25 37 100 25 37 2 7 5 3 1.0 1000 7 5 2 3 100 5 7 3 2 10 5 7 3 5 7 3 2 2 10ms dc operation (tc=25 c) 1ms i cp =4a i c =2a dc operation (ta=25 c) 2sc4616 i cp = --4a 2sa1773 / 2sc4616 2sa1773 / 2sc4616 tc=25 c single pulse tc=25 c single pulse
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