atf-58143 low noise enhancement mode pseudomorphic hemt in a surface mount plastic package data sheet description avago technologies atf?58143 is a high dynamic range, low noise e ? phemt housed in a 4?lead sc? 70 (sot?343) surface mount plastic package. the combination of high gain, high linearity and low noise makes the atf ? 58143 ideal as low noise ampli ? fer for cellular/pcs/wcdma base stations, wireless lo ? cal loop, and other applications that require low noise and high linearity performance in the 450 mhz to 6 ghz frequency range. surface mount package sot-343 features ? low noise and high linearity performance ? enhancement mode technology [1] ? excellent uniformity in product specifcations ? low cost surface mount small plastic package sot ? 343 (4 lead sc? 70) in tape ?and? reel packaging option available ? lead ? free option available specifcations 2 ghz; 3v, 30 ma (typ.) ? 30.5 dbm output 3 rd order intercept ? 19 dbm output power at 1 db ? 0.5 db noise fgure ? 16.5 db associated gain applications ? q1 lna for cellular/pcs/wcdma base stations ? q1, q2 lna and pre ? driver amplifer for 3C4 ghz wll ? other low noise and high linearity applications at 450 mhz to 6 ghz note: 1. enhancement mode technology requires positive vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. pin connections and package marking note: top view. package marking provides orientation and identifcation 8f = device code x = date code character identifes month of manufacture. source drain gate source 8fx attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 1a) refer to avago technologies application note a004r: electrostatic discharge damage and control.
2 atf-58143 absolute maximum ratings [1] symbol parameter units absolutemaximum v ds drain ? sourcevoltage [2] v 5 v gs gate ? sourcevoltage [2] v ? 5to1 v gd gatedrainvoltage [2] v ? 5to1 i ds draincurrent [2] ma 100 p diss totalpowerdissipation [3] mw 500 p inmax. rf inputpower (vds=3v , ids =30ma) (vds=0v, ids=0ma) (vds=4v, ids=30ma) dbm dbm dbm +20 +20 +20 i gs gatesourcecurrent ma 2 [5] t ch channeltemperature c 150 t stg storagetemperature c ? 65to150 jc thermalresistance [4] c/w 162 notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. assumes dc quiescent conditions. 3. source lead temperature is 25c. derate 6.2 mw/c for t l > 33c. 4. thermal resistance measured using 150c liquid crystal measure ? ment method. 5. the device can handle +13 dbm rf input power provided i gs is limited to 2 ma. i gs at p 1db drive level is bias circuit dependent. see applications section for additional information. product consistency distribution charts [6, 7] figure 1. typical i-v curves (v gs =0.1v per step) v ds (v) i ds (ma) 0 7 1 2 3 4 5 6 120 100 80 60 40 20 0 0.7v 0.6v 0.5v 0.4v 0.3v -150 -125 -100 -75 -50 -25 0 0.3 0.4 0.5 0.6 nf (db) 0.7 0.8 cpk=2.735 stdev=0.049 figure 2. nf @ 3v, 30 ma. usl = 0.9, nominal = 0.5 gain (db) 15 16 17 18 cpk=1.953 stdev=0.2610 figure 3. gain @ 3v, 30 ma. usl = 18.5, lsl = 15, nominal = 16.5 oip3 (dbm) 28 29 30 31 32 34 33 cpk=1.036 stdev=0.509 figure 4. oip3 @ 3v, 30 ma. lsl = 29, nominal = 30.5 notes: 6. distribution data sample size is 500 samples taken from 3 diferent wafers. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. measurements made on production test board. this circuit represents a trade ? of between an optimal noise match and a realizeable match based on production test equipment. circuit losses have been de ? embedded from actual measurements.
3 atf-58143 electrical specifcations t a = 25c, rf parameters measured in a test circuit for a typical device symbol parameter and test condition units min. typ. [2] max. vgs operational gate voltage vds = 3v, ids = 30 ma v 0.4 0.51 0.75 vth threshold voltage vds = 3v, ids = 4 ma v 0.18 0.38 0.52 idss saturated drain current vds = 3v, vgs = 0v a 1 5 gm transconductance vds = 3v, mmho 230 410 560 gm = ? idss/ ? vgs; ? vgs = 0.75 C 0.7 = 0.05v igss gate leakage current vgd = vgs = ? 3v a 200 nf noise figure [1] f = 2 ghz vds = 3v, ids = 30 ma db 0.5 0.9 f = 900 mhz vds = 3v, ids = 30 ma db 0.3 f = 2 ghz vds = 4v, ids = 30 ma db 0.5 f = 900 mhz vds = 4v, ids = 30 ma db 0.3 ga associated gain [1] f = 2 ghz vds = 3v, ids = 30 ma db 15 16.5 18.5 f = 900 mhz vds = 3v, ids = 30 ma db 23.1 f = 2 ghz vds = 4v, ids = 30 ma db 17.7 f = 900 mhz vds = 4v, ids = 30 ma db 22.5 oip3 output 3 rd order f = 2 ghz vds = 3v, ids = 30 ma dbm 29 30.5 intercept point [1] f = 900 mhz vds = 3v, ids = 30 ma dbm 28.6 f = 2 ghz vds = 4v, ids = 30 ma dbm 31.5 f = 900 mhz vds = 4v, ids = 30 ma dbm 31.0 p1db 1db compressed f = 2 ghz vds = 3v, ids = 30 ma dbm 19 output power [1] f = 900 mhz vds = 3v, ids = 30 ma dbm 18 f = 2 ghz vds = 4v, ids = 30 ma dbm 21 f = 900 mhz vds = 4v, ids = 30 ma dbm 19 notes: 1. measurements obtained using production test board described in figure 5. 2. typical values determined from a sample size of 500 parts from 3 wafers. figure 5. block diagram of 2 ghz production test board used for noise figure, associated gain, p1db and oip3 measurements. this circuit represents a trade-of between an optimal noise match and associated impedance matching circuit losses. rfin rfout output matching 0.7 db loss input matching 0.6 db loss 28.2 + j9.4 51 ? j3.3
4 atf-58143 typical performance curves 3 v 4 v 3 v 4 v 3 v 4 v 3 v 4 v figure 7. fmin vs. ids and vds tuned for max oip3 and fmin at 2 ghz. ids (ma) fmin (db) 0 70 10 20 30 40 50 60 0.7 0.6 0.5 0.4 0.3 0.2 figure 8. fmin vs. ids and vds tuned for max oip3 and fmin at 900 mhz. ids (ma) fmin (db) 0 70 10 20 30 40 50 60 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 figure 9. gain vs. ids and vds tuned for max oip3 and fmin at 2 ghz. ids (ma) gain (db) 0 70 10 20 30 40 50 60 19 18 17 16 15 14 13 12 figure 10. gain vs. ids and vds tuned for max oip3 and fmin at 900 mhz. ids (ma) gain (db) 0 70 10 20 30 40 50 60 25 24 23 22 21 20 19 18 figure 11. oip3 vs. ids and vds tuned for max oip3 and fmin at 2 ghz. ids (ma) oip3 (dbm) 0 70 10 20 30 40 50 60 42 37 32 27 22 17 12 3 v 4 v figure 12. oip3 vs. ids and vds tuned for max oip3 and fmin at 900 mhz. ids (ma) oip3 (dbm) 0 70 10 20 30 40 50 60 40 35 30 25 20 15 3 v 4 v figure 6. close-up of production test board. c4 j2 c2 l1 c5 at f-58143 s ava go technologies c3 j1 g s c1 r1 c1 : 2.7 pf cap (0603) : 1 pf cap (0603) : 1200 pf cap (0603) : 120 pf cap (0402) : 1200 pf cap (0603) : 49.9 ohm (0603) : 56 nh (0603) : 0 ohm, jumper (0805) : 0 ohm, jumper (0805) : 0 ohm, jumper (0402) : 0 ohm, jumper (0402) c2 c3 c4 c5 r1 l1 j1 j2 j3 j4 a
5 atf-58143 typical performance curves, continued figure 13. p1db vs. idq and vds tuned for max oip3 and fmin at 2 ghz. [1] idq (ma) p1db (dbm) 0 70 10 20 30 40 50 60 24 22 20 18 16 14 12 3 v 4 v figure 14. p1db vs. idq and vds tuned for max oip3 and fmin at 900 mhz. [1] idq (ma) p1db (dbm) 0 70 10 20 30 40 50 60 23 22 21 20 19 18 17 16 15 3 v 4 v figure 15. fmin vs. frequency and temp. tuned for max oip3 and fmin at 3v, 30 ma. frequency (ghz) fmin (db) 0 6 1 2 3 4 5 1.5 1.0 0.5 0 25c -40c 85c 25c -40c 85c figure 16. gain vs. frequency and temp. tuned for max oip3 and fmin at 3v, 30 ma. note: 1. when plotting p1db, the drain current was allowed to vary dependent on the rf input power. frequency (ghz) gain (db) 0 6 2 3 4 5 1 30 25 20 15 10 5 figure 17. oip3 vs. frequency and temp. tuned for max oip3 and fmin at 3v, 30 ma. frequency (ghz) opi3 (dbm) 0 6 2 3 4 5 1 35 30 25 20 15 10 figure 18. p1db vs. frequency and temp. tuned for max oip3 and fmin at 3v, 30 ma. frequency (ghz) p1db (dbm) 0 6 2 3 4 5 1 20.0 19.5 19.0 18.5 18.0 17.5 17.0 16.5 16.0 25c -40c 85c 25c -40c 85c
6 atf-58143 typical scattering parameters, v ds = 3v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.1 0.98 ?17.1 27.29 23.14 168.7 ?40.10 0.010 80.8 0.67 ?12.1 33.69 0.5 0.81 ?92.0 25.25 18.31 123.7 ?28.10 0.039 45.7 0.42 ?46.6 26.68 0.9 0.75 ?126.4 21.87 12.40 103.4 ?26.12 0.049 34.8 0.32 ?66.7 23.99 1.0 0.73 ?132.2 21.18 11.46 99.8 ?25.87 0.051 33.4 0.31 ?72.3 23.52 1.5 0.69 ?153.2 18.38 8.31 85.1 ?24.70 0.058 29.4 0.25 ?90.8 21.54 1.9 0.66 ?165.9 16.74 6.88 75.4 ?23.86 0.064 27.4 0.23 ?103.6 20.30 2.0 0.65 ?169.3 16.40 6.61 73.1 ?23.65 0.066 26.9 0.22 ?106.0 20.03 2.5 0.63 176.3 14.83 5.51 61.9 ?22.71 0.073 24.4 0.19 ?118.1 18.77 3.0 0.61 160.7 13.51 4.74 50.9 ?21.87 0.081 21.1 0.17 ?133.3 17.69 3.5 0.61 147.4 12.35 4.15 40.4 ?21.10 0.088 17.7 0.15 ?145.4 16.73 4.0 0.62 133.8 11.28 3.66 30.2 ?20.45 0.095 13.5 0.13 ?155.7 15.86 4.5 0.64 123.7 10.32 3.28 20.5 ?19.86 0.102 9.3 0.13 ?175.4 15.09 5.0 0.66 112.5 9.41 2.96 11.1 ?19.39 0.107 4.9 0.13 166.2 14.40 5.5 0.68 103.7 8.61 2.70 2.1 ?18.87 0.114 0.7 0.14 152.8 13.74 6.0 0.69 93.0 7.84 2.47 ?7.3 ?18.44 0.120 ?4.4 0.14 140.7 13.14 7.0 0.71 77.2 6.47 2.11 ?24.8 ?17.63 0.131 ?14.6 0.17 120.7 12.06 8.0 0.74 58.3 5.14 1.81 ?43.1 ?17.13 0.139 ?26.1 0.19 95.4 11.14 9.0 0.78 39.7 3.77 1.54 ?60.7 ?16.67 0.147 ?37.0 0.24 70.1 10.22 10.0 0.84 25.1 2.55 1.34 ?78.8 ?16.21 0.155 ?50.2 0.34 52.4 9.39 11.0 0.87 10.2 1.25 1.16 ?97.1 ?16.04 0.158 ?64.2 0.41 37.3 8.65 12.0 0.89 ?3.9 0.19 1.02 ?114.0 ?15.72 0.164 ?78.3 0.46 21.5 7.96 13.0 0.90 ?20.0 ?1.09 0.88 ?132.2 ?15.86 0.161 ?93.6 0.52 2.5 7.39 14.0 0.93 ?31.4 ?2.53 0.75 ?148.3 ?16.22 0.154 ?106.5 0.58 ?14.1 6.85 15.0 0.96 ?43.9 ?4.00 0.63 ?162.8 ?16.73 0.146 ?118.2 0.66 ?26.0 6.36 16.0 0.94 ?54.2 ?5.46 0.53 ?176.5 ?17.15 0.139 ?128.6 0.72 ?36.3 5.85 17.0 0.96 ?65.1 ?7.14 0.44 168.6 ?17.68 0.131 ?142.4 0.74 ?49.0 5.27 18.0 0.93 ?79.8 ?8.81 0.36 153.8 ?18.36 0.121 ?155.6 0.77 ?64.8 4.77 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.12 0.39 17.775 0.04 25.33 0.9 0.18 0.37 46.9 0.04 22.26 1.0 0.20 0.36 53.525 0.04 21.54 1.5 0.32 0.32 80 0.04 19.16 1.9 0.43 0.30 101 0.04 17.65 2.0 0.45 0.30 107.7 0.04 17.33 2.4 0.51 0.29 125.2 0.04 16.23 3.0 0.58 0.31 154.475 0.05 14.77 3.9 0.75 0.35 ?156.95 0.06 13.39 5.0 0.87 0.42 ?120.93 0.09 11.92 5.8 1.01 0.50 ?100.83 0.15 11.07 6.0 1.04 0.53 ?97.15 0.18 10.93 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 3v, i ds = 30 ma figure 19. msg/mag and s 21 vs. frequency at 3v, 30 ma. frequency (ghz) msg/mag and s 21 (db) 0 20 10 15 5 40 35 30 25 20 15 10 5 0 -5 -10 -15 s 21 msg
7 atf-58143 typical scattering parameters, v ds = 4v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.1 0.99 ?16.3 28.16 25.6 169.65 ?41.08 0.01 81.1 0.65 ?10.17 34.62 0.5 0.83 ?94.5 25.82 19.5 125.68 ?28.95 0.04 46.2 0.45 ?54.83 27.39 0.9 0.76 ?133.1 22.52 13.4 104.58 ?27.00 0.04 33.9 0.33 ?76.45 24.76 1 0.75 ?139.7 21.83 12.3 100.73 ?26.74 0.05 32.0 0.31 ?80.28 24.29 1.5 0.72 ?162.2 18.94 8.9 85.42 ?25.79 0.05 26.9 0.24 ?95.17 22.37 1.9 0.71 ?172.7 17.18 7.2 75.68 ?25.25 0.05 24.8 0.21 ?104.27 21.21 2 0.70 ?174.9 16.79 6.9 73.47 ?25.09 0.06 24.4 0.21 ?106.18 20.94 2.5 0.69 173.5 14.67 5.4 59.58 ?24.15 0.06 21.7 0.18 ?117.35 19.41 3 0.68 161.6 13.05 4.5 46.88 ?23.33 0.07 19.0 0.16 ?124.85 18.19 4 0.67 141.9 11.00 3.5 28.55 ?22.14 0.08 14.1 0.13 ?137.33 16.57 5 0.69 123.1 9.29 2.9 10.32 ?21.13 0.09 7.3 0.12 ?42.65 15.21 6 0.73 108.9 7.73 2.4 ?7.48 ?20.28 0.10 ?1.3 0.13 158.73 14.00 7 0.76 96.3 6.16 2.0 ?23.78 ?19.80 0.10 ?9.7 0.17 125.87 12.98 8 0.79 82.4 4.74 1.7 ?39.33 ?19.32 0.11 ?16.9 0.20 104.88 12.03 9 0.82 71.2 3.63 1.5 ?55.93 ?18.49 0.12 ?26.7 0.25 83.12 11.06 10 0.85 60.1 2.63 1.4 ?73.30 ?17.74 0.13 ?39.3 0.31 61.03 10.19 11 0.87 47.2 1.52 1.2 ?90.53 ?17.31 0.14 ?52.2 0.38 41.33 9.42 12 0.89 36.2 0.38 1.0 ?106.67 ?17.12 0.14 ?64.5 0.44 22.65 8.75 13 0.91 26.6 ?0.80 0.9 ?121.58 ?17.09 0.14 ?75.2 0.49 6.28 8.15 14 0.93 17.2 ?2.01 0.8 ?135.15 ?17.15 0.14 ?84.2 0.54 ?7.48 7.57 15 0.94 9.2 ?3.24 0.7 ?148.98 ?17.22 0.14 ?94.3 0.59 ?22.78 6.99 16 0.94 1.2 ?4.43 0.6 ?164.25 ?17.36 0.14 ?106.1 0.64 ?39.22 6.46 17 0.92 ?10.5 ?5.79 0.5 ?59.55 ?17.68 0.13 ?119.3 0.68 ?53.35 5.94 18 0.91 17.6 ?6.74 0.5 170.70 ?17.94 0.13 ?127.5 0.69 ?71.73 5.60 freq f min opt opt r n/50 g a ghz db mag. ang. db 0.5 0.14 0.38 9.7 0.03 24.85 0.9 0.23 0.36 44.4 0.04 22.21 1.0 0.25 0.35 54.0 0.04 21.51 1.5 0.35 0.32 78.7 0.04 19.21 1.9 0.47 0.3 100.7 0.04 17.71 2.0 0.49 0.3 105.4 0.04 17.39 2.4 0.55 0.28 124.0 0.04 16.25 3.0 0.61 0.3 153.9 0.05 14.86 3.9 0.78 0.35 ?157.2 0.07 13.51 5.0 0.91 0.42 ?120.8 0.1 12.05 5.8 1.05 0.49 ?101.2 0.16 11.14 6.0 1.11 0.53 ?97.4 0.19 11.14 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise fgure measurements made at 16 diferent impedances using an atn np5 test system. from these measurements f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the efect of four plated through via holes con ? necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 4v, i ds = 30 ma figure 20. msg/mag and s 21 vs. frequency at 4v, 30 ma. frequency (ghz) msg/mag and s 21 (db) 0 20 10 15 5 40 35 30 25 20 15 10 5 0 -5 -10 s 21 msg
8 package dimensions outline 43 (sot-343/sc70 4 lead) notes: 1. all dimensions are in mm. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold fash and metal blurr. 4. all specifcations comply to eiaj sc70. 5. die is facing up for mold and facing down for trim/form, i.e., reverse trim/form. 6. package surface to be mirror fnish. symbol min.(mm) max.(mm) e 1.15 1.35 d 1.85 2.25 he 1.80 2.40 a 0.80 1.10 a2 0.80 1.00 a1 0.00 0.10 b 0.25 0.40 b1 0.55 0.70 c 0.10 0.20 l 0.10 0.46 ordering information part number no. of devices container atf ?58143? tr1g 3000 7 reel atf ?58143? tr2g 10000 13reel atf ?58143? blkg 100 antistatic bag recommended pcb pad layout for avago's sc70 4l/sot-343 products (dimensions in inches/mm) device orientation user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view 8fx 8fx 8fx 8fx
tape dimensions for outline 4t description symbol size (mm) size (inches) cavity length a o 2.40 0.10 0.094 0.004 width b o 2.40 0.10 0.094 0.004 depth k o 1.20 0.10 0.047 0.004 pitch p 4.00 0.10 0.157 0.004 bottom hole diameter d 1 1.00 + 0.25 0.039 + 0.010 perforlation diameter d 1.50 + 0.10 0.061 + 0.002 pitch p o 4.00 0.10 0.157 0.004 position e 1.75 0.10 0.069 0.004 carrier tape width w 8.00 + 0.30 ? 0.10 0.315 + 0.012 thickness t 1 0.254 0.02 0.0100 0.0008 cover tape width c 5.40 0.010 0.205 + 0.004 thickness t t 0.062 0.001 0.0025 0.0004 distance cavity to perforation (width direction) f 3.50 0.05 0.138 0.002 cavity to perforation (length direction) p 2 2.00 0.05 0.079 0.002 for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2009 avago technologies. all rights reserved. obsoletes 5989-3749en av02-0672en - september 9, 2009 p p 0 p 2 f w c d 1 d e a 0 an t 1 (carrier tape thickness) t t (cover tape thickness) an b 0 k o
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