1625-1675the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibili ty for inaccuracies or omissions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user?s own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. sirenza microde vices does not authorize or warrant any sirenza microdevices product for use in life-support devices and/or systems. copyright 2003 s irenza microdevices, inc. all worldwide rights reserved. 303 s. technology court, phone: (800) smi-mmic http://ww w.sirenza.com broomfield, co 80021 1 eds-104259 rev e sirenza mi crodevices? xd010-04s-d4f 12w power module is a robust broadband 2-stage class a/ab amplifier, suitable for use as a power ampli- fier driver or output stage. the pow er transistors are fabricated using sirenza's latest, high performance ld mos process. it is a drop-in, no- tune, solution for high power applicati ons requiring high efficiency, excel- lent linearity, and unit-to-unit repeatabi lity. internal bias current compensa- tion ensures stable performance over a wide temperature range. it is internally matched to 50 ohms. key specifications symbol parameter unit min. typ. max. frequency frequency of operation mhz 350 - 600 p 1db output power at 1db compression, 450mhz w - 12 - gain gain at 10w output power, 450mhz db 30 32 - gain flatness peak to peak gain variation, 350 - 600mhz db - 1.0 2.0 irl input return loss 1w output power, 350 - 600mhz db 10 15 - efficiency drain efficiency at 10w cw, 350-600mhz % 26 30 - linearity 3 rd order imd at 10w pep (two tone), 450mhz & 451mhz dbc - -32 -28 delay signal delay from pin 1 to pin 4 ns - 2.5 - phase linearity deviation from linear phase (peak to peak) deg - 0.5 - frequency frequency of operation mhz 350 - 600 r th, j-l thermal resistance stage 1 (junction-to-case) oc/w 11 r th, j-2 thermal resistance stage 2 (junction-to-case) oc/w 4 xd010-04s-d4f 350-600 mhz class ab 12w power amplifier module product features applications ? available in rohs compliant packaging ? 50 w rf impedance ? 12w output p 1db ? single supply operation : nominally 28v ? high gain: 32 db at 450 mhz ? high efficiency: 30% at 450 mhz ? robust 8000v esd (hbm), class 3b ? xemos ii ldmos fets ? temperature compensation ? dtv ? public service ? wireless infrastructure ? military communications product description bias network temperature compensation v d2 d1 v rf out rf in stage 2 stage 1 1 23 4 case flange = ground test conditions z in = z out = 50 ? , v dd = 28.0v, i dq1 = 230 ma, i dq2 =150 ma, t flange = 25oc functional block diagram XD010-04S-D4FY pb rohs compliant & green package
xd010-04s-d4f 350-600 mhz 12w power amp module 303 s. technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 2 eds-104259 rev e pin description pin # function description 1 rf input module rf input. this pin is internally connected to dc grou nd. do not apply dc voltages to the rf leads. care must be taken to protect against video transients that may damage the active devices. 2v d1 this is the drain voltage for the first stage. nominally +28vdc 3v d2 this is the drain voltage for the 2 nd stage of the amplifier module. the 2 nd stage gate bias is temperature compensated to maintain constant quiscent drain current over the operating temperature range. see note 1. 4 rf output module rf output. this pin is internally connected to dc ground. do not apply dc voltages to the rf leads. care must be taken to protect against video transients that may damage the active devices. flange gnd exposed area on the bottom side of the package needs to be me chanically attached to the ground plane of the board for optimum thermal and rf performance. see mounting instru ctions in application note an-060 on sirenza?s web site. simplified device schematic absolute maximum ratings parameters value unit 1 st stage bias voltage (v d1 )35v 2 nd stage bias voltage (v d2 )35v rf input power +20 dbm load impedance for continuous operation with- out damage 5:1 vswr output device channel temperature +200 oc operating temperature range -20 to +90 oc storage temperature range -40 to +100 oc operation of this device beyond any one of these limits may cause per- manent damage. for reliable continuous operation see typical setup val- ues specified in the table on page one. caution: esd sensitive appropriate precaution in handling, packaging and testing devices must be observed. note 1: the internally generated gate voltage is thermally compen- sated to maintain constant quiescent current over the temper- ature range listed in the data sheet. no compensation is provided for gain changes with te mperature. this can only be accomplished with agc external to the module. note 2: internal rf decoupling is included on all bias leads. no addi- tional bypass elements are required, however some applica- tions may require energy storage on the drain leads to accommodate time-varying waveforms. note 3: this module was designed to hav e its leads hand soldered to an adjacent pcb. the maximum soldering iron tip tempera- ture should not exceed 700 f, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. refer to app note an060 (www.sirenza.com) for fur- ther installation instructions. temperature compensation bias network v d2 d1 v rf 1 q1 q2 2 3 4 case flange = ground in out rf quality specifications parameter unit typical esd rating human body model, jedec document - jesd22-a114-b v 8000 mttf 85 o c leadframe, 200 o c channel hours 1.2 x 10 6
xd010-04s-d4f 350-600 mhz 12w power amp module 303 s. technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 3 eds-104259 rev e typical performance curves 2 tone gain, efficiency, linearity and irl vs frequency vdd=28v, pout=10w pep, delta f=1 mhz 0 10 20 30 40 50 60 70 250 300 350 400 450 500 550 600 650 700 frequency (mhz) gain (db), efficiency (%) -70 -60 -50 -40 -30 -20 -10 0 imd(dbc), irl (db) gain efficiency im3 im5 im7 irl 2 tone gain, efficiency, linearity vs pout vdd=28v, freq=450 mhz, delta f=1 mhz 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 pout (w pep) gain (db), efficiency (%) -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 imd (dbc) gain efficiency im3 im5 im7 cw gain, efficiency, irl vs frequency vdd=28v, pout=10w 25 27.5 30 32.5 35 37.5 40 250 300 350 400 450 500 550 600 650 700 frequency (mhz) gain (db), efficiency (%) -25 -22.5 -20 -17.5 -15 -12.5 -10 input return loss (db ) gain efficiency irl cw gain, efficiency vs pout vdd=28v, freq=450 mhz 33.5 33.75 34 34.25 34.5 34.75 35 0 5 10 15 20 pout (w) gain (db) 0 10 20 30 40 50 60 efficiency (%) gain efficiency
xd010-04s-d4f 350-600 mhz 12w power amp module 303 s. technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 4 eds-104259 rev e test board schematic with module connections shown test board layout to receive gerber files, dxf drawings, a detailed bom, and assem bly recommendations for the test board with fixture, contact ap plications sup- port at support@sirenza.com. data sheet for evaluation circuit (xd010-eval) available from sirenza website. component description manufacturer pcb rogers 4350, e r = 3 . 5 thickness=30mils rogers j1, j2 sma, rf, panel mount tab w / flange johnson j3 mta post header, 6 pin, rect- angle, polarized, surface mount amp c1, c10 cap, 10 m f, 35v, 10%, tant, elect, d kemet c2, c20 cap, 0.1 m f, 100v, 10%, 1206 johanson c3, c30 cap, 1000pf, 100v, 10%, 1206 johanson c25, c26 cap, 68pf, 250v, 5%, 0603 atc c21, c22 cap, 0.1 m f, 100v, 10%, 0805 panasonic c23, c24 cap, 1000pf, 100v, 10%, 0603 avx mounting screws 4-40 x 0.250? various test board bill of materials
xd010-04s-d4f 350-600 mhz 12w power amp module 303 s. technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 5 eds-104259 rev e package outline drawing recommended pcb cutout and land ing pads for the d4f package note 3: dimensions are in inches refer to application note an-060 ?installation instructions for xd module series? for additional mounting info. app note ava ilbale at at www.sirenza.com
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