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october 2011 doc id 019030 rev 2 1/14 14 STS26N3LLH6 n-channel 30 v, 0.0038 ? , 26 a, so-8 stripfet? vi deepgate? power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) high avalanche ruggedness low gate drive power losses very low switching gate charge applications switching applications description this product utilizes the 6th generation of design rules of st?s proprietary stripfet? technology, with a new gate structure.the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram type v dss r ds(on) max i d STS26N3LLH6 30 v 0.0044 ? 26 a 1 3 4 5 2 7 6 8 so-8 table 1. device summary order code marking packag packaging STS26N3LLH6 26g3l so-8 tape and reel www.st.com
contents STS26N3LLH6 2/14 doc id 019030 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STS26N3LLH6 electrical ratings doc id 019030 rev 2 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs (1) 1. continuous mode gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 26 a i d drain current (continuous) at t c =100 c 16.25 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 104 a p tot total dissipation at t amb = 25 c 2.7 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-amb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-ambient 47 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current 40 a e as single pulse avalanche energy (starting t j =25 c, i d =i av ) 525 mj
electrical characteristics STS26N3LLH6 4/14 doc id 019030 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v v ds = 30 v, t c =125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 13 a v gs = 4.5 v, i d = 13 a 0.0038 0.0047 0.0044 0.0053 ? ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 4040 740 425 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 26 a v gs =4.5 v figure 19 - 40 13 16 - nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain -1.4 - ?
STS26N3LLH6 electrical characteristics doc id 019030 rev 2 5/14 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15 v, i d = 13 a, r g =4.7 ?, v gs =4.5 v figure 13 - 17 18 75 46 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 26 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 104 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd =13 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =13 a, di/dt = 100 a/s, v dd =20 v, tj=150 c figure 15 - 34 35 2.1 ns nc a
electrical characteristics STS26N3LLH6 6/14 doc id 019030 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.01 0.1 1 v d s (v) 10 (a) 10 m s 100 m s 1 s 100 am10015v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on resistance i d 150 100 50 0 0 2 v d s (v) 4 (a) 200 250 5v 4v 3 v v g s =10v 3 00 3 50 am04976v1 i d 150 100 50 0 0 4 v g s (v) 8 (a) 2 6 10 200 250 3 00 3 50 v d s =1v am04977v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.94 0.96 0.9 8 1.00 1.02 1.04 125 150 1.06 am04979v1 r d s (on) 2.5 2.0 1.5 1 0 20 i d (a) (m ? ) 3 .0 3 .5 4.0 4.5 40 60 8 0 5.0 5.5 v g s =10v am04905v1
STS26N3LLH6 electrical characteristics doc id 019030 rev 2 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =15v i d =26a 100 12 am049 8 0v1 c 3 100 2100 1100 100 0 10 v d s (v) (pf) 5 4100 15 ci ss co ss cr ss 20 25 5100 6100 am049 8 1v1 v g s (th) 0.6 0.4 0.2 0 -50 0 t j (c) (norm) -25 0. 8 75 25 50 100 125 150 1.0 1.2 am049 8 2v1 r d s (on) 1.2 0.6 0.4 0 -50 0 t j (c) (norm) -25 75 25 50 100 125 150 0.2 0. 8 1.0 1.4 1.6 am049 83 v1 v s d 0 40 i s d (a) (v) 20 60 8 0 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =25c t j =150c am049 8 4v1
test circuits STS26N3LLH6 8/14 doc id 019030 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STS26N3LLH6 test circuits doc id 019030 rev 2 9/14 figure 19. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd
package mechanical data STS26N3LLH6 10/14 doc id 019030 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STS26N3LLH6 package mechanical data doc id 019030 rev 2 11/14 table 9. so-8 mechanical data dim. mm min. typ. max. a 1.75 a1 0.10 0.25 a2 1.25 b 0.28 0.48 c 0.17 0.23 d4.804.905.00 e5.806.006.20 e1 3.80 3.90 4.00 e1.27 h 0.25 0.50 l 0.40 1.27 l1 1.04 k0 8 ccc 0.10
package mechanical data STS26N3LLH6 12/14 doc id 019030 rev 2 figure 20. so-8 drawing 001602 3 _rev_e
STS26N3LLH6 revision history doc id 019030 rev 2 13/14 5 revision history table 10. document revision history date revision changes 08-jul-2011 1 first release. 19-oct-2011 2 document stat us promoted from preliminary data to datasheet.
STS26N3LLH6 14/14 doc id 019030 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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