rev.4.00, may 19.2005, page 1 of 6 hat2204c silicon n channel mos fet power switching rej03g0448-0400 rev.4.00 may 19.2005 features ? low on-resistance r ds(on) = 26m ? typ.(at v gs = 4.5 v) ? low drive current ? high density mounting ? 1.8 v gate drive device outline renesas package code: pwsf0006ja-a (package name: cmfpak - 6) 1. source 2. drain 3. drain 4. drain 5. drain 6. gate 1 2 3 6 5 4 g d s 6 1 5 d 2 d 3 d 4 index band absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 12 v gate to source voltage v gss 8 v drain current i d 3.5 a drain peak current i d (pulse) note1 14 a body - drain diode reverse drain current i dr 3.5 a channel dissipation pch note2 900 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr4 40 x 40 x 1.6mm)
hat2204c rev.4.00, may 19.2005, page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 12 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 8 i g = 10 a, v ds = 0 gate to source leakage current i gss ? ? 10 a v gs = 6.4 v, v ds = 0 drain to source leakage current i dss ? ? 1 a v ds = 12 v, v gs = 0 gate to source cutoff voltage v gs(off) 0.3 ? 1.2 v v ds = 10 v, i d = 1 ma r ds(on) ? 26 34 m ? i d = 1.8 a, v gs = 4.5 v note3 r ds(on) ? 34 44 m ? i d = 1.8 a, v gs = 2.5 v note3 drain to source on state resistance r ds(on) ? 45 69 m ? i d = 1.8 a, v gs = 1.8 v note3 forward transfer admittance |yfs| 8.5 13 ? s i d = 1.8 a, v ds = 10 v note3 input capacitance ciss ? 770 ? pf output capacitance coss ? 115 ? pf reverse transfer capacitance crss ? 50 ? pf v ds = 10 v v gs = 0 f = 1 mhz turn - on delay time td(on) ? 10 ? ns rise time tr ? 9.5 ? ns turn - off delay time td(off) ? 36 ? ns fall time tf ? 5 ? ns i d = 1.8 a, v gs = 4.5 v v ds = 10 v, r l = 5.6 ? , rg = 4.7 ? total gate charge qg ? 9 ? nc gate to source charge qgs ? 1.5 ? nc gate to drain charge qgd ? 2 ? nc v dd = 10 v v gs = 4.5 v i d = 3.5 a body - drain diode forward voltage v df ? 0.8 1.1 v i f = 3.5 a, v gs = 0 note3 notes: 3. pulse test
hat2204c rev.4.00, may 19.2005, page 3 of 6 main characteristics 1.6 1.2 0.8 0.4 0 50 100 150 200 30 10 3 1 0.3 0.1 0.1 0.3 0.03 1 3 10 30 100 20 16 12 8 4 0 2 46810 20 16 12 8 4 0 12345 0.03 0.01 100 1.4 v tc = 75 c 25 c ? 25 c power dissipation pch (w) ambient temperature ta (c) power vs.temperature dreating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain vurrent i d (a) typical output characteristics pulse test gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 2.5 v 120 80 40 0 24 6 810 0.1 10 1 100 100 1000 10 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (mv) drain current i d (a) drain to source on state resistance vs. drain current 160 i d = 3.5 a 1.8 a 1 a pulse test v gs = 1.8 v pulse test 1.8 v test condition when using the glass epoxy board.(fr4 40 x 40 x 1.6 mm) 4.5 v 1.6 v v gs = 1.2 v 4.5 v 2.5 v ta = 25c,1 shot pulse when using the fr4 board. dc ope ration 10 s operation in this area is limited by r ds(on) 100 s s m 0 1 = w p s m 1
hat2204c rev.4.00, may 19.2005, page 4 of 6 100 80 60 40 20 ? 25 0 25 50 75 100 125 150 0 0.3 0.1 3 30 100 100 30 10 3 1 0.3 0.1 110 case temperature tc (c) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) 25 c tc = ? 25 c 75 c v ds = 10 v pulse test v gs = 1.8 v pulse test 1, 1.8, 3.5 a 0 4812 3000 1000 10000 100 300 40 0 8 30 6 20 4 10 2 4 8 12 16 20 0 1000 100 1 10 0.1 0.3 1 3 10 30 100 30 10 3 1 v gs = 0 f = 1 mhz ciss coss crss i d = 3.5 a v dd v gs capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics drain current i d (a) switching time t (ns) switching characteristics v dd = 12 v 10 v 5 v t d(on) t d(off) t r t f 3.5 a 2610 0 0.4 0.8 1.2 1.6 2.0 20 8 v gs = 0 , -5 v source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) pulse test 4 12 16 i d = 3.5 a 4.5 v 5 v 2.5 v 1, 1.8 a 1.8 a 1 a v dd = 12 v 10 v 5 v
hat2204c rev.4.00, may 19.2005, page 5 of 6 vin monitor d.u.t. vin 4.5 v r l v ds = 10 v tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform 4.7 ?
hat2204c rev.4.00, may 19.2005, page 6 of 6 package dimensions d a aa a a a 2 a 1 l l p s s s y b b 2 l 1 m x eh e e e e 1 c pattern of terminal position areas a a 1 a 2 b b 1 c c 1 d e e h e l l p x y b 2 e 1 l 1 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 1.65 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5 dimension in millimeters reference symbol min nom max ? 0.0065g mass[typ.] cmfpak-6 / cmfpak-6v pwsf0006ja-a renesas code jeita package code package name b a-a section b 1 c 1 c ordering information part name quantity shipping container HAT2203C-EL-E 3000 pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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