features ? current transfer ratio (ctr: min. 50% at i f = 5 ma, v ce = 5 v) ? high input-output isolation voltage (v iso = 5000 v rms ) ? response time (t r : typ., 4 s at v ce = 2 v, i c = 2 ma, r l = 100 ?) ? compact dual-in-line package ? ul approved ? csa approved ? iec/en/din en 60747-5-2 approved ? options available: C leads with 0.4" (10.16 mm) spacing (w00) C leads bends for surface mounting (300) C tape and reel for smd (500) C iec/en/din en 60747-5-2 approvals (060) applications ? signal transmission between circuits of diferent potentials and impedances ? i/o interfaces for computers ? feedback circuit in power supply description the hcpl-817 contains a light emitting diode optically coupled to a phototransistor. it is packaged in a 4-pin dip package and available in wide-lead spacing option and lead bend smd option. input-output isolation voltage is 5000 vrms. response time, t r , is typically 4 s and minimum ctr is 50% at input current of 5 ma. schematic 4 3 1 2 pin no. and internal connection diagram 1. anode 2. cathode 3. emitter 4. collector 1 2 anode cathode v f + ? i f 4 3 collector emitter i c caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. hcpl-817 phototransistor optocoupler high density mounting type data sheet lead (pb) free rohs 6 fully compliant rohs 6 fully compliant options available; -xxxe denotes a lead-free product functional diagram
2 ordering information :hcpl-817-xxxx is ul recognized with 5000 vrms for 1 minute per ul1577 and is approved under csa component acceptance notice #5, file ca 88324. part number rohs compliant option package surface mount gull wing tape & reel iec/en/ din en 60747- 5-2 quantity rank 0 50% 3 package outline drawings hcpl-817-000e hcpl-817-w00e hcpl-817-060e 6 . 5 0 . 5 ( 0 . 2 5 6 ) d i m e n s i o n s i n m i l l i m e t e r s a n d ( i n c h e s ) 4 . 6 0 . 5 ( 0 . 1 8 1 ) 2 . 5 4 0 . 2 5 ( 0 . 1 ) 3 . 5 0 . 5 ( 0 . 1 3 8 ) 7 . 6 2 0 . 3 ( 0 . 3 ) 0 . 2 6 ( 0 . 0 1 0 ) 7 . 6 2 ~ 9 . 9 8 2 . 8 0 . 5 ( 0 . 1 1 0 ) 3 . 3 0 . 5 ( 0 . 1 3 0 ) 0 . 5 0 . 1 ( 0 . 0 2 ) 0 . 5 ( 0 . 0 2 ) t y p . a 8 1 7 y w w d a t e c o d e r a n k l e a d f r e e a n o d e 6 . 5 0 . 5 ( 0 . 2 5 6 ) d i m e n s i o n s i n m i l l i m e t e r s a n d ( i n c h e s ) 4 . 6 0 . 5 ( 0 . 1 8 1 ) 2 . 5 4 0 . 2 5 ( 0 . 1 ) 3 . 5 0 . 5 ( 0 . 1 3 8 ) 7 . 6 2 0 . 3 ( 0 . 3 ) 0 . 2 6 ( 0 . 0 1 0 ) 7 . 6 2 ~ 9 . 9 8 2 . 8 0 . 5 ( 0 . 1 1 0 ) 3 . 3 0 . 5 ( 0 . 1 3 0 ) 0 . 5 0 . 1 ( 0 . 0 2 ) 0 . 5 ( 0 . 0 2 ) t y p . a 8 1 7 v y w w d a t e c o d e r a n k l e a d f r e e a n o d e 6 . 5 0 . 5 ( 0 . 2 5 6 ) d i m e n s i o n s i n m i l l i m e t e r s a n d ( i n c h e s ) 4 . 6 0 . 5 ( 0 . 1 8 1 ) 2 . 5 4 0 . 2 5 ( 0 . 1 ) 3 . 5 0 . 5 ( 0 . 1 3 8 ) 6 . 9 0 . 5 ( 0 . 2 7 2 ) 7 . 6 2 0 . 3 ( 0 . 3 ) 0 . 2 6 ( 0 . 0 1 0 ) 1 0 . 1 6 0 . 5 ( 0 . 4 ) 2 . 8 0 . 5 ( 0 . 1 1 0 ) 2 . 3 0 . 5 ( 0 . 0 9 ) 0 . 5 0 . 1 ( 0 . 0 2 ) a 8 1 7 y w w d a t e c o d e r a n k l e a d f r e e a n o d e
4 hcpl-817-300e solder refow temperature profle absolute maximum ratings (t a = 25?c) storage temperature, t s C55?c to +125?c operating temperature, t a C30?c to +100?c lead solder temperature, max. 260?c for 10 s (1.6 mm below seating plane) average forward current, i f 50 ma reverse input voltage, v r 6 v input power dissipation, p i 70 mw collector current, i c 50 ma collector-emitter voltage, v ceo 70 v emitter-collector voltage, v eco 6 v collector power dissipation 150 mw total power dissipation 200 mw isolation voltage, v iso (ac for 1 minute, r.h. = 40 ~ 60%) 5000 vrms note: non-halide fux should be used. 3 0 s e c o n d s 6 0 ~ 1 5 0 s e c 9 0 s e c 6 0 s e c 6 0 s e c 2 5 c 1 5 0 c 2 0 0 c 2 5 0 c 2 6 0 c ( p e a k t e m p e r a t u r e ) 2 1 7 c t i m e ( s e c ) t e m p e r a t u r e ( c ) 1. one-time soldering refow is recommended within the condition of temperature and time profle shown. 2. when using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of thedevice. keep the temperature on the package of the device within the condition of (1) above. 6 . 5 0 . 5 ( 0 . 2 5 6 ) d i m e n s i o n s i n m i l l i m e t e r s a n d ( i n c h e s ) 4 . 6 0 . 5 ( 0 . 1 8 1 ) 2 . 5 4 0 . 2 5 ( 0 . 1 ) 3 . 5 0 . 5 ( 0 . 1 3 8 ) 7 . 6 2 0 . 3 ( 0 . 3 ) 0 . 2 6 ( 0 . 0 1 0 ) 1 0 . 1 6 0 . 3 ( 0 . 4 ) 1 . 2 0 . 1 ( 0 . 0 4 7 ) 0 . 3 5 0 . 2 5 ( 0 . 0 1 4 ) 1 . 0 0 . 2 5 ( 0 . 0 3 9 ) a 8 1 7 y w w d a t e c o d e r a n k l e a d f r e e a n o d e
5 figure 1. forward current vs. temperature. figure 2. collector power dissipation vs. temperature. figure 3. collector-emitter saturation voltage vs. forward current. i f ? forward current ? ma 0 t a ? ambient temperature ? c 75 125 50 25 10 40 0 5 0 100 -30 60 hcpl-817 fig 1 30 20 p c ? collector power dissipation ? mw 0 t a ? ambient temperature ? c 100 50 200 150 hcpl-817 fig 2 75 125 25 0 5 0 100 -3 0 * ctr = x 100% i c i f electrical specifcations (t a = 25?c) parameter symbol min. typ. max. units test conditions forward voltage v f C 1.2 1.4 v i f = 20 ma reverse current i r C C 10 a v r = 4 v terminal capacitance c t C 30 250 pf v = 0, f = 1 khz collector dark current i ceo C C 100 na v ce = 20 v collector-emitter breakdown voltage bv ceo 70 C C v i c = 0.1 ma emitter-collector breakdown voltage bv eco 6 C C v i e = 10 a collector current i c 2.5 C 30 ma i f = 5 ma, v ce = 5 v, *current transfer ratio ctr 50 C 600 % r be = collector-emitter saturation voltage v ce(sat) C 0.1 0.2 v i f = 20 ma, i c = 1 ma response time (rise) t r C 4 18 s v cc = 2 v, i c = 2 ma response time (fall) t f C 3 18 s r l = 100 ? cut-of frequency f c C 80 C khz v cc = 5 v, i c = 2 ma r l = 100 ? , C3 db isolation resistance r iso 5 x 10 10 1 x 10 11 C ? dc 500 v 40 ~ 60% r.h. floating capacitance c f C 0.6 1.0 pf v = 0, f = 1 mhz 0 i f ? forward current ? ma 10 15 2 5 0 hcpl-181 fig 3 1 3 4 5 6 v ce(sat.) ? collector-emitter saturation voltage ? v t a = 25 c i c = 0.5 ma i c = 1 ma i c = 3 ma i c = 5 ma i c = 7 ma
6 figure 4. forward current vs. forward voltage. figure 5. current transfer ratio vs. forward current. figure 6. collector current vs. collector-emitter voltage. figure 7. relative current transfer ratio vs. temperature. figure 8. collector-emitter saturation voltage vs. temperature. figure 9. collector dark current vs. temperature. i c ? collector current ? ma 0 v ce ? collector-emitter voltage ? v 6 9 40 20 50 3 0 hcpl-817 fig 6 p c (max.) t a = 25c i f = 30 ma i f = 25 ma i f = 10 ma i f = 5 ma 30 10 i f = 20 ma i f = 15 ma 1 2 4 5 7 8 relative current transfer ratio ? % 0 100 50 150 hcpl-817 fig 7 v ce = 5 v i f = 5 ma t a ? ambient temperature ? c 75 25 0 5 0 100 -30 v ce(sat.) ? collector-emitter saturation voltage ? v 0 0.10 0.02 0.16 hcpl-817 fig 8 i c = 1 ma i f = 20 ma t a ? ambient temperature ? c 75 25 0 5 0 100 -25 0.04 0.06 0.08 0.12 0.14 i ceo ? collector dark current ? a hcpl-817 fig 9 t a ? ambient temperature ? c v ce = 20 v 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 75 25 0 5 0 100 -25 10 -5 i f ? forward current ? ma 1 v f ? forward voltage ? v 2.0 3.0 10 5 500 1.0 0 hcpl-817 fig 4 t a = 75c 0.5 1.5 2.5 2 20 50 100 200 t a = 50c t a = 25c t a = 0c t a = -25c 0 i f ? forward current ? ma 10 50 40 200 2 1 hcpl-817 fig 5 20 60 120 140 160 ctr ? current transfer ratio ? % v ce = 5 v t a = 25c 80 100 180 5 2 0 figure 10. response time vs. load resistance. figure 11. frequency response. response time ? s 0.1 r l ? load resistance ? k ? 0.1 5 1 0.5 0.2 0.5 500 0.2 2 1 0 0.05 2 hcpl-817 fig 10 v ce = 2 v i c = 2 ma t a = 25c tf tr 1 5 10 20 50 100 200 ts td voltage gain av ? db f ? frequency ? khz 1 2 0 500 5 -20 -10 2 1 0 5 0 0.5 0 hcpl-817 fig 11 100 200 r l = 10 k ? r l = 1 k ? r l = 100 ? v ce = 2 v i c = 2 ma t a = 25c
test circuit for response time test circuit for frequency response v cc r d r l output ~ v cc r d input r l output input output 10% 90% t t t t f s r d for product information and a complete list of distributors, please go to our website: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2009 avago technologies. all rights reserved. obsoletes av01-0534en av02-0265en - january 30, 2009
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