the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sk3386 switching n-channel power mos fet data sheet document no. d14471ej3v0ds00 (3rd edition) date published august 2004 ns cp(k) printed in japan the mark shows major revised points. 1999, 2000 description the 2sk3386 is n-channel mos field effect transistor designed for high current switching applications. features ? low on-state resistance r ds(on)1 = 21 m ? max. (v gs = 10 v, i d = 17 a) r ds(on)2 = 36 m ? max. (v gs = 4.0 v, i d = 17 a) ? low c iss : c iss = 2100 pf typ. ? built-in gate protection diode ? to-251/to-252 package absolute maximum ratings (t a = 25c) drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current (dc) i d(dc) 34 a drain current (pulse) note1 i d(pulse) 120 a total power dissipation (t c = 25c) p t 40 w total power dissipation (t a = 25c) p t 1.0 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c single avalanche current note2 i as 28 a single avalanche energy note2 e as 78 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = 30 v, r g = 25 ?, v gs = 20 0 v ordering information part number package 2sk3386 to-251 (mp-3) 2sk3386-z to-252 (mp-3z) (to-251) (to-252)
data sheet d14471ej3v0ds 2 2sk3386 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.0 2.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 17 a 10 19 s r ds(on)1 v gs = 10 v, i d = 17 a 17 21 m ? drain to source on-state resistance note r ds(on)2 v gs = 4.0 v, i d = 17 a 25 36 m ? input capacitance c iss v ds = 10 v 2100 pf output capacitance c oss v gs = 0 v 340 pf reverse transfer capacitance c rss f = 1 mhz 170 pf turn-on delay time t d(on) v dd = 30 v, i d = 17 a 32 ns rise time t r v gs = 10 v 310 ns turn-off delay time t d(off) r g = 10 ? 98 ns fall time t f 100 ns total gate charge q g v dd = 48 v 39 nc gate to source charge q gs v gs = 10 v 7.0 nc gate to drain charge q gd i d = 34 a 12 nc body diode forward voltage note v f(s-d) i f = 34 a, v gs = 0 v 0.87 v reverse recovery time t rr i f = 34 a, v gs = 0 v 46 ns reverse recovery charge q rr di/dt = 100 a/ s 84 nc note pulsed test circuit 1 avalanche capability r g = 25 ? 50 ? pg. l v dd v gs = 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma
data sheet d14471ej3v0ds 3 2sk3386 typical characteristics (t a = 25c ) pw - pulse width - s transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ?c /w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse 10 100 r th(ch-c) = 3.13 ?c /w r th(ch-a) = 125 ?c /w derating factor of forward bias safe operating area t ch - channel temperature - ?c dt - percentage of rated power - % 040 20 60 100 140 80 120 160 100 80 60 40 20 0 t c - case temperature - ?c p t - total power dissipation - w 0 0 80 20 40 60 100 140 120 16 0 total power dissipation vs. case temperature 10 20 30 40 50 70 60 forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 1 0.1 10 100 1000 1 10 100 t c = 25?c single pulse i d(pulse) r ds(on) limited (at v gs = 10 v ) i d(dc) pw = 10 s 100 s 1 ms 0.1 dc power dissipation limited 10 ms
data sheet d14471ej3v0ds 4 2sk3386 drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 2.0 3.0 4.0 40 100 80 60 1.0 pulsed v gs =10 v 20 4.0 v drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 0 5101520 pulsed 50 40 30 20 10 i d = 17 a forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a pulsed 1234 5 6 v ds = 10 v 1 0.1 0.01 10 100 t a = ? 55 ?c 25 ?c 75 ?c 150 ?c drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 10 1 100 1000 pulsed 0 10 20 30 40 50 60 70 80 v gs = 4.0 v 10 v gate to source threshold voltage vs. channel temperature t ch - channel temperature - ?c v gs(th) - gate to source threshold voltage - v 0.5 v ds = 10 v i d = 1 ma 1.0 1.5 2.0 2.5 3.0 ? 50 0 50 100 150 0 forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s 0.01 0.1 1 10 100 10 100 0.1 0.01 1 pulsed t a = 150 ?c 75 ?c 25 ?c ? 50 ?c v ds = 10 v
data sheet d14471ej3v0ds 5 2sk3386 reverse recovery time vs. drain current i f - drain current - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1.0 10 100 1000 100 dynamic input/output characteristics v gs - gate to source voltage - v q g - gate charge - nc v ds - drain to source voltage - v 0 0 10 15 520253035 40 20 40 60 80 4 8 12 16 i d = 34 a v ds v gs 30 v 12 v v dd = 48 v drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - m ? 0 10 20 30 ? 50 0 50 100 150 i d = 17 a 40 50 60 10 v v gs = 4.0 v pulsed source to drain diode forward voltage 1.0 i sd - diode forward current - a 0 1.5 v sd - source to drain voltage - v 0.5 pulsed 0.1 1 10 100 1000 v gs = 0 v v gs = 10 v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 0.1 100 1000 10000 1 10 100 v gs = 0 v f = 1 mhz c oss c rss c iss switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 1 1 0.1 100 1000 10 100 t f t r t d(on) t d(off)
data sheet d14471ej3v0ds 6 2sk3386 single avalanche current vs. inductive load l - inductive load - h i as - single avalanche current - a 10 100 1 m10 m v dd = 30 v r g = 25 ? v gs = 20 v 0 v i as = 28 a 10 100 0.1 e as = 78 mj 1 single avalanche energy derating factor starting t ch - starting channel temperature - ?c energy derating factor - % 25 50 75 100 160 140 120 100 80 60 40 20 0 125 150 v dd = 30 v r g = 25 ? v gs = 20 v 0 v i as 28 a
data sheet d14471ej3v0ds 7 2sk3386 package drawings (unit: mm) 1) to-251 (mp-3) 1.gate 2.drain 3.source 4.fin (drain) 2 13 6.5?.2 5.0?.2 4 1.5- 0.1 +0.2 5.5?.2 7.0 min. 13.7 min. 2.3 2.3 0.75 0.5?.1 2.3?.2 1.6?.2 1.1?.2 0.5- 0.1 +0.2 0.5- 0.1 +0.2 2) to-252 (mp-3z) 1. gate 2. drain 3. source 4. fin (drain) 123 4 6.5?.2 5.0?.2 4.3 max. 0.8 2.3 2.3 0.9 max. 5.5?.2 10.0 max. 2.0 min. 1.5- 0.1 +0.2 2.3?.2 0.5?.1 0.8 max. 0.8 1.0 min. 1.8 typ. 0.7 1.1?.2 equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serv es as a protector against esd. when this device actually used, an additional protection circuit is externally r equired if a voltage exceeding the rated voltage may be applied to this device.
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