1 edition 1.2 september 1999 FLM6472-4F c-band internally item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25 -65 to +175 175 t c = 25 ? c v v w ? c ? c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 ? c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 16.0 and -2.2 ma respectively with gate resistance of 100 w . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1700 2600 - 1700 - -0.5 -1.5 -3.0 -5.0 - - 8.5 9.5 - -36- 35.5 36.5 - v ds = 5v, i ds = 85ma v ds = 5v, i ds =1100ma v ds = 5v, v gs = 0v i gs = -85 a v ds =10v, i ds = 0.65 i dss (typ.), f = 6.4 ~ 7.2 ghz, z s =z l = 50 ohm f = 7.2 ghz, ? f = 10 mhz 2-tone test p out = 25.5dbm s.c.l. ma ms v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 1100 1300 ma i dsr im 3 h add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 ? c) channel to case thermal resistance - 5.0 6.0 ? c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib 10v x i dsr x r th channel temperature rise - - 80 ? c ? t ch description the FLM6472-4F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 36.5dbm (typ.) ?high gain: g 1db = 9.5db (typ.) ?high pae: h add = 36% (typ.) ?low im 3 = -46dbc@po = 25.5dbm ?broad band: 6.4 ~ 7.2ghz ?impedance matched zin/zout = 50 w ?hermetically sealed package
2 FLM6472-4F c-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( ? c) 24 30 18 12 6 total power dissipation (w) output power & im 3 vs. input power v ds =10v f 1 = 7.2 ghz f 2 = 7.21 ghz 2-tone test 14 12 16 18 20 22 input power (s.c.l.) (dbm) s.c.l.: single carrier level 21 23 25 27 29 31 33 -50 -40 -30 -20 -10 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) output power vs. frequency pin=28dbm 26dbm 24dbm 22dbm 6.6 6.4 6.8 7.2 7.0 frequency (ghz) 36 37 38 34 35 33 32 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 6.8 ghz 20 18 22 24 26 28 input power (dbm) 38 36 34 32 30 28 26 30 45 15 0 output power (dbm) h add p out h add (%)
3 FLM6472-4F c-band internally matched fet s-parameters v ds = 10v , i ds = 1 100ma frequency s1 1 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 6200 .355 48.9 3.308 19.2 .040 -30.6 .704 -70.9 6300 .396 43.1 3.273 7.5 .044 -43.2 .665 -78.3 6400 .428 36.4 3.256 -4.3 .048 -55.5 .627 -85.6 6500 .449 29.2 3.239 -15.8 .053 -65.7 .586 -93.3 6600 .460 21.2 3.246 -27.5 .058 -75.9 .548 -101.1 6700 .458 12.5 3.260 -39.4 .062 -85.7 .506 -109.8 6800 .445 2.9 3.290 -51.6 .066 -95.6 .465 -1 19.5 6900 .420 -8.4 3.329 -64.4 .071 -105.0 .429 -130.8 7000 .377 -21.9 3.368 -77.8 .077 -1 15.1 .391 -144.3 7100 .342 -30.9 3.397 -84.4 .079 -1 19.2 .371 -152.3 7200 .278 -52.6 3.407 -99.3 .083 -130.0 .347 -170.4 7300 .220 -85.7 3.368 -1 15.1 .086 -141.4 .338 169.0 7400 .207 -133.5 3.263 -131.9 .087 -153.0 .348 147.4 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 ? +90 ? 0 ? -90 ? s 21 s 12 0.2 0.1 scale for |s 12 | 25 250 50 w scale for |s 21 | 1 2 3 4 7.4 7.4 6.6 6.6 6.2 ghz 6.2 ghz 6.4 6.4 6.8 6.8 7.0 7.0 7.2 7.2 7.4 7.4 6.6 6.6 6.2 ghz 6.2 ghz 6.8 6.8 7.0 7.0 7.2 7.2 6.4 6.4
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1 138, u.s.a. phone: (408) 232-9500 f ax: (408) 428-91 1 1 www .fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 f ax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. 1999 fujitsu compound semiconduct or, inc. printed in u.s.a. fcsi0999m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLM6472-4F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.472) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3
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