rev.1, 20-mar-2012 HYESD1065M / hyesd1065p 6 channel low capacitance esd protection diode array features application pin configuration mechanical information fig. 1 C forward current derating curve ambient temperature ( ) 25 50 75 100 125 150 175 single phase half wave 60hz fig. 2 C maximum non - 1 2 5 10 single 1 4 10 20 100 tj = 25 c f = 1 mhz 0 0.2 0.4 0.6 0.8 0.0 rs1a - rs1g rs1j - sr1m hyesd1065 is a 6 - channel ultra low capacitance esd protection diode array which includes surge rated to protect high speed data lines.each channel consists of a pair of esd diodes that steer positive or negative esd current to either the positive or negative rail. typical application, the negative rail pin ( assigned as gnd ) is connected with system ground. the positive esd current is steered to the ground through an esd diode and zener diode and the positive esd voltage is clamped to the zener voltage. ? 6 channel esd protection for high speed data line ? provides esd protection to iec61000 - 4 - 2 level 4 - + 15kv air discharge - + 8kv contact discharge ? ultra low capacitance - i/o to gnd : 0.4pf ( max ) - i/o to i/o : 0.25pf ( max ) ? low clamping voltage & 5v operation voltage ? hdmi / dvi ports ? display port ? usb 3.0 port ? flat panel monitors / tvs ? cellular handsets & accessories ? pci express ? case : msop - 8 / dfn - 10 - 4.1x2.0x0.5 package ? pb - free, halogen free, rohs/weee complian i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 nc gnd v ref nc i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 gnd vdd HYESD1065M msop - 8 hyesd1065p dfn - 10 msop - 8 dfn - 10 - 4.1x2.0x0.5
unit w a v v symbol min typ max unit v rwm - - 5 v v br 6 - v i r - - 1 ua v c - 8.5 12 v v c - 1.8 - v c j - 0.2 0.25 pf c j - - 0.4 pf rev. 1, 20-mar-2012 symbol value parameter test condition v esd + 8kv t stg i pp -55 to +125 peak pulse power(8/20s) peak pulse current(8/20s) v rwm =5v, t=25c; i/o pin to gnd -55 to +150 esd per iec 61000-4-2(air) esd per iec 61000-4-2(contact) i pp =1a, t p =8/20us; negative pulse; any i/o pin to gnd v r =0v, f=1mhz; between i/o pins v r =0v, f=1mhz; any i/o pin to gnd negative clamping voltage junction capacitance between i/o and gnd junction capacitance between channel storage temperature range any i/o pin to gnd electrical characteristics ( t c =25 i br =1ma; i/o pin to gnd t op positive clamping voltage reverse leakage current reverse breakdown voltage i pp =1a, t p =8/20us; positive pulse; any i/o pin to gnd reverse working voltage HYESD1065M / hyesd1065p operating temperature range p pp maximum rating and thermal characteristics ( t c =25 parameter 5 v esd + 15kv 150
rev. 1, 20-mar-2012 rating and characteristic curves HYESD1065M / hyesd1065p typical characteristic curves ( t j =25 , unless otherwise noted ) 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 power ambient temperature ( ) 0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 cj, junction capacitance (pf) reverse voltage - v r (v) f=1mhz 0 20 40 60 80 100 0 5 10 15 20 25 30 percentage of i pp time (us) fig.1 - power derating curve fig.3 - junction capacitance vs. reverse voltage fig.2 - pulse waveform 0 5 10 15 20 0 1 2 3 4 5 6 7 clamping voltage (v) peak pulse current (a) waveform tr=8us, td=20us fig.4 - clamping voltage vs. peak pulse current peak value irsm@8us half value irsm/2@20us io / io io / gnd
rev. 1, 20-mar-2012 dfn-10 package HYESD1065M msop-8 1065 13" reel 3k msop-8 package hyesd1065p dfn-10-4.1x2.0x0.5 65p 7" reel 3k part number package marking packing q'ty HYESD1065M / hyesd1065p order & marking information package outline dimension
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