document number: 94363 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 1 insulated gate bipolar transistor (standard speed igbt), 100 a ga200sa60sp vishay high power products features ? standard: optimized for minimum saturation voltage and low speed up to 1 khz ? lowest conduction losses available ? fully isolated package (2500 v ac ) ? very low internal inductance (5 nh typical) ? industry standard outline ? ul pending ? completely lead (pb)-free ? designed and qualified for industrial level benefits ? designed for increased operating efficiency in power conversion: ups, smps, welding, induction heating ? easy to assemble and parallel ? direct mounting to heatsink ? plug-in compatible with other sot-227 packages product summary v ces 600 v v ce(on) (typical) 1.33 v v ge 15 v i c 100 a sot-227 c g e n-channel rohs compliant absolute maximum ratings parameter symbol test conditions max. units collector to emitter breakdown voltage v ces 600 v continuous collector current i c t c = 25 c 200 a t c = 100 c 100 pulsed collector current i cm repetitive rating; v ge = 20 v, pulse width limited by maximum junction temperature see fig. 15 400 clamped inductive load current i lm v cc = 80 % (v ces ), v ge = 20 v, l = 10 h, r g = 2.0 , see fig. 14 400 gate to emitter voltage v ge 20 v reverse voltage avalanche energy e arv repetitive rating; pulse width limited by maximum junction temperature 155 mj rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v maximum power dissipation p d t c = 25 c 630 w t c = 100 c 250 operating junction and storage temperature range t j , t stg - 55 to + 150 c mounting torque 6-32 or m3 screw 12 (1.3) lbf ? in (n ? m) thermal and mechanical specifications parameter symbol typ. max. units junction to case r thjc -0.20 c/w case to sink, flat, greased surface r thcs 0.05 - weight of module 30 - g
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94363 2 revision: 10-sep-08 ga200sa60sp vishay high power products insulated gate bipolar transistor (standard speed igbt), 100 a notes (1) pulse width 80 s; duty factor 0.1 % (2) pulse width 5.0 s, single shot electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units collector to emitter breakdown voltage v (br)ces v ge = 0 v, i c = 250 a 600 - - v emitter to collector breakdown voltage v (br)ecs (1) v ge = 0 v, i c = 1.0 a 18 - - temperature coeff. of breakdown voltage v (br)ces / t j v ge = 0 v, i c = 1.0 ma - 0.62 - v/c collector to emitter saturation voltage v ce(on) i c = 100 a v ge = 15 v see fig. 2, 5 - 1.10 1.3 v i c = 200 a - 1.33 - i c = 100 a, t j = 150 c - 1.02 - gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 - 6.0 temperature coeff. of threshold voltage v ge(th) / t j v ce = v ge , i c = 2 ma - - 10 - mv/c forward transconductance g fe (2) v ce = 100 v, i c = 100 a 90 150 - s zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 1.0 ma v ge = 0 v, v ce = 10 v, t j = 150 c - - 10 gate to emitter leakage current i ges v ge = 20 v - - 250 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units total gate charge (turn-on) q g i c = 100 a v cc = 400 v v ge = 15 v; see fig. 8 - 770 1200 nc gate emitter charge (turn-on) q ge - 100 150 gate collector charge (turn-on) q gc - 260 380 turn-on delay time t d(on) t j = 25 c i c = 100 a v cc = 480 v v ge = 15 v r g = 2.0 energy losses include ?tail? see fig. 9, 10, 13 -78- ns rise time t r -56- turn-off delay time t d(off) - 890 1300 fall time t f - 390 580 turn-on switching loss e on -0.98- mj turn-off switching loss e off - 17.4 - total switching loss e ts - 18.4 25.5 turn-on delay time t d(on) t j = 150 c i c = 100 a, v cc = 480 v v ge = 15 v, r g = 2.0 energy losses include ?tail? see fig. 10, 11, 13 -72- ns rise time t r -60- turn-off delay time t d(off) -1500- fall time t f -660- total switching loss e ts - 35.7 - mj internal emitter inductance l e between lead, and center of the die contact -5.0- nh input capacitance c ies v ge = 0 v v cc = 30 v ? = 1.0 mhz; see fig. 7 - 16 250 - pf output capacitance c oes -1040- reverse transfer capacitance c res -190-
document number: 94363 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 3 ga200sa60sp insulated gate bipolar transistor (standard speed igbt), 100 a vishay high power products fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical trans fer characteristics fig. 4 - maximum collector current vs. case temperature fig. 5 - typical collector to emitter voltage vs. junction temperature for b oth: d u ty cycle: 50 % t j = 125 c t sink = 90 c gate dri v e as specified po w er dissipation = 140 w 0 250 0.1 f - frequency (khz) load current (a) 1 10 100 200 150 100 50 clamp v oltage: 8 0 % of rated triang u lar w a v e: i 60 % of rated v oltage ideal diodes s qu are w a v e: i 1 10 100 1000 0.5 1.0 1.5 2.0 2.5 v ce - collector to emitter voltage (v) i c - collector to emitter current (a) v ge = 15 v 20 s p u lse w idth t j = 150 c t j = 25 c 10 100 1000 567 v ge - gate to emitter voltage (v) i c - collector to emitter current (a) t j = 150 c t j = 25 c v cc = 50 v 5 s p u lse w idth 0 100 150 200 50 25 50 75 100 125 150 t c - case temperature (c) maximum dc collector current (a) 1 2 3 - 60 - 40 - 20 0 20 40 60 8 0 100 120 140 160 t j - junction temperature (c) v ce - collector to emitter voltage (v) v ge = 15 v 8 0 s p u lse w idth i c = 400 a i c = 200 a i c = 100 a
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94363 4 revision: 10-sep-08 ga200sa60sp vishay high power products insulated gate bipolar transistor (standard speed igbt), 100 a fig. 6 - maximum effective transient thermal impedance, junction to case fig. 7 - typical capacitance vs. collector to emitter voltage fig. 8 - typical gate charge vs. gate to emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single p u lse (thermal resistance) z thjc - thermal response d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 1 10 100 0 6000 12 000 1 8 000 24 000 30 000 v ce - collector to emitter voltage (v) c - capacitance (pf) v ge = 0 v , f = 1 mhz c ies = c ge + c gc , c ce shorted c res = c gc c oes = c ce + c gc c ies c oes c res 0 200 400 600 8 00 0 4 8 12 16 20 q g - total gate charge (nc) v ge - gate to emitter voltage (v) v cc = 400 v i c = 100 a 0 1020304050 18 19 20 21 22 23 24 25 r g - gate resistance ( ) total switching losses (mj) v cc = 480 v v ge = 15 v t j = 25 c i c = 200 a total switching losses (mj) - 60 - 40 - 20 0 20 40 60 8 0 100 120 140 160 10 100 1000 t j - junction temperature (c) i c = 200 a i c = 100 a i c = 350 a r g = 2.0 v ge = 15 v v cc = 4 8 0 v
document number: 94363 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 10-sep-08 5 ga200sa60sp insulated gate bipolar transistor (standard speed igbt), 100 a vishay high power products fig. 11 - typical switching losses vs. collector current fig. 13a - clamped inductive load test circuit fig. 14 - turn-off soa fig. 13b - pulsed collector current test circuit fig. 14a - switching lost test circuit total switching losses (mj) 100 150 200 250 300 350 0 40 8 0 120 160 i c - collector current (a) r g = 2.0 t j = 150 c v cc = 4 8 0 v v ge = 15 v d.u.t. 50 v l v c * * dri v er same type as d.u.t.; v c = 8 0 % of v ce (max) note: d u e to the 50 v po w er s u pply, p u lse w idth and ind u ctor w ill increase to o b tain rated i d 1000 v 1 2 1 2 i c - collector current (a) 1 10 100 1000 1 10 100 1000 safe operating area v ce - collector to emitter voltage (v) v ge = 20 v t j = 125 c 4 8 0 v 4 x i c at 25 c 4 8 0 f 960 v 0 - 4 8 0 v r l = = 50 v dri v er* 1000 v d.u.t. i c v c l * dri v er same type as d.u.t., v c = 4 8 0 v 3 1 2
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94363 6 revision: 10-sep-08 ga200sa60sp vishay high power products insulated gate bipolar transistor (standard speed igbt), 100 a fig. 14b - switching loss waveforms ordering information table t = 5 s t d (on) t f t r 90 % t d (off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3 1 - insulated gate bipolar transistor (igbt) 2 - generation 4, igbt silicon, dbc construction 3 - current rating (200 = 200 a) 4 - single switch, no diode 5 - sot-227 6 - voltage rating (60 = 600 v) 8 - none = standard production p = lead (pb)-free 7 - speed/type (s = standard speed) device code 5 13 24 678 g a 200 s a 60 s p links to related documents dimensions http://www.vishay.com/doc?95036 packaging information http://www.vishay.com/doc?95037
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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