1 transistor 2SD1937 silicon npn epitaxial planer type for low-frequency amplification complementary to 2sb1297 n features l high collector to emitter voltage v ceo . l optimum for the driver-stage of a low-frequency and 40 to 60w output amplifier. l allowing supply with the radial taping. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector 3:base toC92nl package 5.0 0.2 13.5 0.5 0.7 0.2 8.0 0.2 1.27 123 1.27 4.0 0.2 0.45 +0.15 ?.1 0.45 +0.15 ?.1 2.3 0.2 0.7 0.1 2.54 0.15 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 120 120 5 1 0.5 1 150 C55 ~ +150 unit v v v a a w ?c ?c n electrical characteristics (ta=25?c) parameter collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance symbol v ceo v ebo h fe1 * h fe2 v ce(sat) v be(sat) f t c ob conditions i c = 0.1ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 150ma v ce = 5v, i c = 500ma i c = 300ma, i b = 30ma i c = 300ma, i b = 30ma v cb = 10v, i e = C50ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz min 120 5 130 50 typ 200 max 330 1 1.2 20 unit v v v v mhz pf * h fe1 rank classification rank r s h fe1 130 ~ 220 185 ~ 330
2 transistor 2SD1937 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 1.2 1.0 0.8 0.6 0.4 0.2 ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 200 160 120 80 40 ta=25?c 0.2ma 0.1ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma i b =1.0ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 25?c ?5?c ta=75?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0 600 500 400 300 200 100 ta=75?c 25?c ?5?c i c /i b =10 collector current i c ( a ) forward current transfer ratio h fe ? ? ?0 ?0 ?00 0 400 300 100 250 350 200 50 150 v cb =10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 80 60 20 50 70 40 10 30 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 single pulse ta=25?c t=10ms t=1s i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a )
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