fast soft recovery rectifier diode i2153 rev. c 01/2000 quiet ir series 85epf..hv i f(rms) = 160a v f < 1.4v @ 100a t rr = 95ns v rrm 800 to 1200v description/features the 85epf.. fast soft recovery quiet ir rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. available in the new pow ir tab tm package, this new series is suitable for a large range of applications combining excellent die to footprint ratio and sturdeness connectivity for use in high current environments. typical applications are both: output rectification and freewheeling in inverters, choppers and converters input rectifications where severe restrictions on conducted emi should be met. major ratings and characteristics i f(av) rect. conduction 85 a 50% duty cycle @ t c = 85 c i f(rms) 160 a v rrm range (*) 800 to 1200 v i fsm 1100 a v f @ 100 a, t j = 25c 1.4 v t rr @ 1a, - 100a/s 95 ns t j range - 40 to 150 c characteristics 85epf.. units 1 case styles 85epf.. 85epf..j (*) for higher voltage up to 1600v contact factory
2 85epf.. hv quiet ir series i2153 rev. c 01/2000 i f(av) max. average forward current 85 a @ t c = 85 c, 180 conduction half sine wave i fsm max. peak one cycle non-repetitive 1100 10ms sine pulse, rated v rrm applied surge current 1250 1 0ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 5000 10ms sine pulse, rated v rrm applied 7000 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 70000 a 2 s t = 0.1 to 10ms, no voltage reapplied part number voltage ratings absolute maximum ratings electrical specifications recovery characteristics parameters 85epf.. units conditions a a 2 s v fm max. forward voltage drop 1.36 v @ 85a, t j = 25c r t forward slope resistance 4.03 m ? v f(to) threshold voltage 0.87 v i rm max. reverse leakage current 0.1 t j = 25 c 15 t j = 150 c parameters 85epf.. units conditions t j = 150c v r = rated v rrm ma t rr reverse recovery time 480 ns i f @ 85apk i rr reverse recovery current 7.1 a @ 25a/ s q rr reverse recovery charge 2.1 c @ 25c s snap factor 0.5 parameters 85epf.. units conditions v rrm , maximum v rsm , maximum non repetitive i rrm peak reverse voltage peak reverse voltage 150c vvma 85epf08 800 900 85epf10 1000 1100 15 85epf12 1200 1300
3 85epf.. hv quiet ir series i2153 rev. c 01/2000 t j max. junction temperature range - 40 to 150 c t stg max. storage temperature range - 40 to 150 c r thjc max. thermal resistance junction 0.35 c/w dc operation to case r thja max. thermal resistance junction 40 c/w to ambient r thcs typical thermal resistance, case to 0.2 c/w mounting surface , smooth and greased heatsink wt approximate weight 6 (0.21) g (oz.) t mounting torque min. 6 (5) max. 12 (10) case style to-247ac jedec thermal-mechanical specifications parameters 85epf.. units conditions kg-cm (ibf-in) fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics 70 80 90 100 110 120 130 140 150 0 20 40 60 80 100 120 140 dc 30 60 90 120 180 maximum allowable case temperature (c) average forw ard current (a) 85epf.. series r (d c ) = 0.35 k/w conduction period thjc 70 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0 102030405060708090 30 60 90 120 18 0 maximum allowable case temperature ( c) ave ra g e fo rw a rd c urre nt (a) 85epf.. se rie s r (d c ) = 0.35 k/w conduction angle th jc 0 20 40 60 80 10 0 12 0 14 0 16 0 18 0 20 0 0 20 40 60 80 100 120 140 rms lim it conduction period average forward current (a) maximum average forward power loss (w) 85epf.. serie s t = 15 0 c j dc 180 120 90 60 30 0 20 40 60 80 10 0 12 0 14 0 16 0 0 102030405060708090 rms lim it conduction angle average forward current (a) maxim um average forward power loss (w ) 8 5epf.. series t = 150 c j 180 120 90 60 30
4 85epf.. hv quiet ir series i2153 rev. c 01/2000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - forward voltage drop characteristics fig. 9 - recovery time characteristics, t j = 150c fig. 8 - recovery time characteristics, t j = 25c 300 400 500 600 700 800 900 1000 1100 1200 110100 n um b er o f eq u a l a m p l itud e h a lf c y cl e cu rre nt p uls e s (n ) peak half sine wave forward current (a) j 85epf.. series a t a n y r a t e d l o a d c o n d it io n a n d w it h rate d v applied fo llow ing surg e. rrm initial t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 30 0 40 0 50 0 60 0 70 0 80 0 90 0 1000 1100 1200 1300 1400 0.01 0.1 1 p u ls e tra i n d u ra t io n ( s ) peak half sine w ave forward current (a) versus pulse tra in d ura tio n. m ax im um n on repe titive surg e current 85e pf.. series initia l t = 150 c no voltage reapplied rate d v rea pplied rrm j 1 10 10 0 1000 00.511.52 2.533.54 4.5 insta nta ne ous fo rw a rd curren t (a) instantaneous forward voltage (v) 85 epf.. series t = 25 c j t = 150 c j 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.22 0 40 80 120 160 200 ra te o f fa ll o f fo rw a rd curren t - d i/d t (a/s) 1 a 10 a m a xim um re verse re co very tim e - trr (s) 80 a i = 1 25 a fm 85e pf.. series t = 25 c j 20 a 40 a 0 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 200 rate o f fall o f forward current - di/dt (a/s) 1 a 10 a 20 a m a xim um re verse re co very tim e - t rr (s ) 40 a 8 5epf.. serie s t = 150 c j i = 8 0 a fm
5 85epf.. hv quiet ir series i2153 rev. c 01/2000 fig. 10 - recovery charge characteristics, t j = 25c fig. 11 - recovery charge characteristics, t j = 150c fig. 12 - recovery current characteristics, t j = 25c fig. 13 - recovery current characteristics, t j = 150c fig. 14 - thermal impedance z thjc characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0 40 80 120 160 200 rate of fall o f forward current - di/dt (a/s) maximum reverse recovery charge - qrr (c) 80 a 40 a 20 a 85e pf.. se rie s t = 25 c j i = 12 5 a fm 10 a 1 a 0 2 4 6 8 10 12 14 0 40 80 120 160 200 rate o f fall of forward current - di/dt (a/s) 1 a 10 a 20 a m a xim um re verse re co ve ry c ha rg e - q rr (c ) 40 a 85epf.. series t = 150 c j i = 8 0 a fm 0 2 4 6 8 10 12 14 16 18 20 22 0 40 80 120 160 200 m a x im um rev erse re co ve ry c urre nt - irr (a ) rate of fall o f forw ard current - di/dt (a/s) 1 a 10 a 20 a 85epf.. se rie s t = 25 c j i = 1 25 a fm 40 a 80 a 0 5 10 15 20 25 30 35 40 45 0 40 80 120 160 200 maximum reverse recovery current - irr (a) rate o f fall of forw ard current - di/dt (a/s) 1 a 10 a 20 a 40 a 85epf.. se ries t = 150 c j i = 80 a fm 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 sq ua re w ave p ulse d ura tion (s) stea d y sta te va lue (d c o pe ratio n) s in g l e p u ls e th j c 85epf.. series t ra n sie n t t h e rm a l im p e d a n c e z ( k/ w ) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
6 85epf.. hv quiet ir series i2153 rev. c 01/2000 outline table case style powirtab tm dimensions in millimeters and (inches) case style powirtab tm "j" version dimensions in millimeters and (inches)
7 85epf.. hv quiet ir series i2153 rev. c 01/2000 world headquarters: 233 kansas st., el segundo, california 90245 u.s.a. tel: (310) 322 3331. fax: (310) 322 3332. european headquarters: hurst green, oxted, surrey rh8 9bb, u.k. tel: ++ 44 1883 732020. fax: ++ 44 1883 733408. ir canada: 15 lincoln court, brampton, markham, ontario l6t3z2. tel: (905) 453 2200. fax: (905) 475 8801. ir germany: saalburgstrasse 157, 61350 bad homburg. tel: ++ 49 6172 96590. fax: ++ 49 6172 965933. ir italy: via liguria 49, 10071 borgaro, torino. tel: ++ 39 11 4510111. fax: ++ 39 11 4510220. ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171. tel: 81 3 3983 0086. ir southeast asia: 1 kim seng promenade, great world city west tower,13-11, singapore 237994. tel: ++ 65 838 4630. ir taiwan: 16 fl. suite d.207, sec. 2, tun haw south road, taipei, 10673, taiwan. tel: 886 2 2377 9936. http://www.irf.com fax-on-demand: +44 1883 733420 data and specifications subject to change without noti ce. ordering infor mation table 85 e p f 12 j device code 1 5 24 3 1 - current rating 2 - circuit configuration: e = single diode 3 - package: p = to-247ac 4 - type of silicon: f = fast recovery 5 - voltage code: code x 100 = v rrm (*) 6 - none= powirtab tm standard 65 j = short lead version 6 08 = 800v 10 = 1000v 12 = 1200v cathode base cathode an o de 2 13 base cathode anode anode 6 (*) for higher voltage up to 1600v contact factory
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