1/6 bta20 bw/cw btb20 bw/cw ? september 2001 - ed: 1a snubberless triacs n high commutation: (di/dt)c > 18a/ms without snubber n high surge current: i tsm = 200a n v drm up to 800v n bta family: insulating voltage = 2500v (rms) (ul recognized: e81734) features the bta/btb20 bw/cw triac family are high per- formance glass passivated chips technology. the snubberless ? concept offer suppression of rc network and it is suitable for application such as phase control and static switching on inductive or resistive load. description a1 a2 g to-220ab symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) bta tc = 70 c20a btb tc = 90 c i tsm non repetitive surge peak on-state current (tj initial = 25 c) tp = 8.3ms 210 a tp = 10ms 200 i 2 ti 2 t value tp = 10ms 200 a 2 s di/dt critical rate of rise of on-state current gate supply: i g = 500ma di g /dt = 1a/ m s repetitive f = 50hz 20 a/ m s non repetitive 100 tstg tj storage and operating junction temperature range -40 to +150 -40 to +125 c tl maximum lead soldering temperature during 10s at 4.5mm from case 260 c absolute ratings (limiting values) symbol parameter bta/btb20-...bw/cw unit 600 700 v drm v rrm repetitive peak off-state voltage tj = 125 c 600 700 v a1 a2 g
bta20 bw/cw btb20 bw/cw 2/6 symbol parameter value unit rth (j-a) junction to ambient 60 c/w rth (j-c) dc junction to case for dc bta 2.8 c/w btb 1.7 rth (j-c) ac junction to case for 360 conduction angle (f = 50hz) bta 2.1 c/w btb 1.3 gate characteristics (maximum values) p g(av) =1w p gm = 10w (tp = 20 m s) i gm =4a(tp=20 m s) v gm = 16v (tp = 20 m s) thermal resistance symbol test conditions quadrant bta / btb20 unit bw cw i gt v d = 12v (dc) r l =33 w tj = 25 c i - ii - iii min. 2 1 ma max. 50 35 v gt v d = 12v (dc) r l =33 w tj = 25 c i - ii - iii max. 1.5 v v gd v d =v drm r l = 3.3k w tj =125 c i - ii - iii min. 0.2 v tgt v d =v drm i g = 500ma di g /dt = 3a/ m s tj = 25 c i - ii - iii typ. 2 m s i l i g = 1.2i gt tj = 25 c i - iii typ. 50 - ma ii 90 - i - ii - iii max. - 80 i h *i t = 500ma gate open tj = 25 c max. 75 50 ma v tm *i tm = 28a tp = 380 m stj=25 c max. 1.70 v i drm i rrm v drm rated v rrm rated tj = 25 c max. 0.01 ma tj = 125 c max. 3 dv/dt * linear slope up to v d = 67% v drm gate open tj = 125 c typ. 750 500 v/ m s min. 500 250 (di/dt)c* without snubber tj = 125 c typ. 36 22 a/ms min. 18 11 * for either polarity of electrode a 2 voltage with reference to electrode a 1 electrical characteristics
bta20 bw/cw btb20 bw/cw 3/6 package i t(rms) v drm /v rrm sensitivity specification a v bw cw bta (insulated) 20 600 x x 700 x x btb (uninsulated) 600 x product information bt a 20 - 600 bw triac series insulation: a: insulated b: non insulated current: 20a voltage: 600: 600v 700: 700v sensitivity ordering information
bta20 bw/cw btb20 bw/cw 4/6 fig. 3: correlation between maximum rms power dissipation and maximum allowable temperatures (tamb and tcase) for different thermal resistances heatsink + contact (btb). fig. 4: rms on-state current versus case temper- ature. 1e-3 1e-2 1e-1 1 e+0 1 e +1 1 e +2 5 e+2 0.01 0.1 1 zth/rth zth(j-c) zth(j-a) tp(s) fig. 5: relative variation of thermal impedance versus pulse duration. fig. 6: relative variation of gate trigger current and holding current versus junction temperature. fig. 1: maximum rms power dissipation versus rms on-state current (f = 50hz).(curves are cut off by (di/dt)c limitation) fig. 2: correlation between maximum rms power dissipation and maximum allowable temperatures (tamb and tcase) for different thermal resistances heatsink + contact (bta).
bta20 bw/cw btb20 bw/cw 5/6 fig. 9: on-state characteristics (maximum values). fig. 7: non repetitive surge peak on-state current versus number of cycles. fig. 8: non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and cor- responding value of i 2 t.
bta20 bw/cw btb20 bw/cw 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ordering type marking package weight base qty delivery mode bta/btb20-xxxyz bta/btb20-xxxyz to-220ab 2.3 g 250 bulk n epoxy meets ul94,v0 n cooling method: c n recommended torque value: 0.8 m.n. n maximum torque value: 1 m.n. other information package mechanical data to-220ab (plastic) m b l4 c b2 a2 l2 c2 l3 b1 a1 a f l i e c1 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102
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