technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung t j = 25c v ces 3300 v collector-emitter voltage t j = -25c 3300 v kollektor-dauergleichstrom t c = 80c i c,nom. 800 a dc-collector current t c = 25 c i c 1300 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 1600 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 9,6 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 800 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 1600 a grenzlastintegral der diode i2t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 ta 2 s spitzenverlustleistung der diode maximum power dissipation diode t j = 125c p rqm 800 kw isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 6.000 v teilentladungs-aussetzspannung partial discharge extinction voltage rms, f = 50 hz, q pd 10 pc (acc. to iec 1287) v isol 2.600 v charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 800 a, v ge = 15v, tvj = 25c v ce sat - 3,40 4,25 v collector-emitter saturation voltage i c = 800 a, v ge = 15v, t vj = 125c - 4,30 5,00 v gate-schwellenspannung gate threshold voltage i c = 80 ma, v ce = v ge , t vj = 25c v ge(th) 4,2 5,1 6,0 v eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies - 100 - nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 5,4 - nf gateladung gate charge v ge = -15v ... + 15v, v ce = 1800v q g -15-c kollektor-emitter reststrom v ce = 3300v, v ge = 0v, t vj = 25c i ces - 0,1 8 ma collector-emitter cut-off current v ce = 3300v, v ge = 0v, t vj = 125c - 40 100 ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: jrgen g?ttert date of publication : 08.06.99 approved by: chr. lbke; 20.07.99 revision: 2 222.200 1 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 800 a, v cc = 1800v turn on delay time (inductive load) v ge = 15v, r g = 1,8 w , c ge = 150nf, t vj = 25c t d,on - 370 - ns v ge = 15v, r g = 1,8 w , c ge = 150nf, t vj = 125c - 350 - ns anstiegszeit (induktive last) i c = 800 a, v cc = 1800v rise time (inductive load) v ge = 15v, r g = 1,8 w , c ge = 150nf, t vj = 25c t r - 250 - ns v ge = 15v, r g = 1,8 w , c ge = 150nf, t vj = 125c - 270 - ns abschaltverz?gerungszeit (ind. last) i c = 800 a, v cc = 1800v turn off delay time (inductive load) v ge = 15v, r g = 1,8 w , c ge = 150nf, t vj = 25c t d,off - 1550 - ns v ge = 15v, r g = 1,8 w , c ge = 150nf, t vj = 125c - 1700 - ns fallzeit (induktive last) i c = 800 a, v cc = 1800v fall time (inductive load) v ge = 15v, r g = 1,8 w , c ge = 150nf, t vj = 25c t f - 200 - ns v ge = 15v, r g = 1,8 w , c ge = 150nf, t vj = 125c - 200 - ns einschaltverlustenergie pro puls i c = 800 a, v cc = 1800v, v ge = 15v turn-on energy loss per pulse r g = 1,8 w , c ge = 150 nf, t vj = 125c, l s = 40nh e on - 1920 - mws abschaltverlustenergie pro puls i c = 800 a, v cc = 1800v, v ge = 15v turn-off energy loss per pulse r g = 1,8 w , c ge = 150 nf, t vj = 125c, l s = 40nh e off - 1020 - mws kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc =2500v, v cemax =v ces -l sce di/dt i sc - 4000 - a modulinduktivit?t igbt (zweig / arm 1+2 parallel ) l sce - 12 - nh stray inductance module diode (zweig / arm 3) - 25 - nh modul-leitungswiderstand, anschlsse - chip t = 25c, igbt (zweig / arm 1+2 parallel ) r cc'+ee' - 0,19 - m w lead resistance, terminals - chip t = 25c, diode (zweig / arm 3) 0,34 - m w charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 800 a, v ge = 0v, t vj = 25c v f - 2,80 3,50 v forward voltage i f = 800 a, v ge = 0v, t vj = 125c - 2,80 3,5 v sperrstrom v ce = 3300v, t vj = 25c, zweig / arm 3 i r - 0,01 1,6 ma reverse current v ce = 3300v, t vj = 125c, zweig / arm 3 - 4 20 ma rckstromspitze i f = 800 a, - di f /dt = 2500 a/sec peak reverse recovery current v r = 1800v, vge = -10v, t vj = 25c i rm - 650 - a v r = 1800v, vge = -10v, t vj = 125c - 700 - a sperrverz?gerungsladung i f = 800 a, - di f /dt = 2500 a/sec recovered charge v r = 1800v, vge = -10v, t vj = 25c q r - 500 - as v r = 1800v, vge = -10v, t vj = 125c - 900 - as abschaltenergie pro puls i f = 800 a, - di f /dt = 2500 a/sec reverse recovery energy v r = 1800v, vge = -10v, t vj = 25c e rec - 490 - mws v r = 1800v, vge = -10v, t vj = 125c - 1000 - mws 2 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,013 k/w thermal resistance, junction to case diode/diode, dc, zweig / arm 1+2 - - 0,026 k/w diode/diode, dc, zweig / arm 3 - - 0,026 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module l paste = 1 w/m*k / l grease = 1 w/m*k r thck - 0,004 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix material modulgrundplatte material of module baseplate alsic innere isolation internal insulation aln kriechstrecke creepage distance 32,2 mm luftstrecke clearance 19,1 mm cti comperative tracking index > 400 anzugsdrehmoment f. mech. befestigung m1 5 nm mounting torque anzugsdrehmoment f. elektr. anschlsse terminals m4 m2 2 nm terminal connection torque terminals m8 8 .. 10 nm gewicht weight g 1500 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet i c [a] v ce [v] i c [a] v ce [v] 0 200 400 600 800 1000 1200 1400 1600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 t = 25c t = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 200 400 600 800 1000 1200 1400 1600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 vge = 8v vge = 9v vge = 10v vge = 12v vge = 15v vge = 20v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet i c [a] v ge [v] i f [a] v f [v] 0 200 400 600 800 1000 1200 1400 1600 5678910111213 t = 25c t = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 200 400 600 800 1000 1200 1400 1600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 tj = 25c tj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet e [mj] i c [a] e [mj] r g [ w ] 0 1000 2000 3000 4000 5000 6000 7000 0 200 400 600 800 1000 1200 1400 1600 eon eoff erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) r g,on = 1,8 w, r g,off = 1,8 w , c ge = 150 nf, v ce = 1800v, t j = 125c 0 1000 2000 3000 4000 5000 6000 7000 8000 024681012141618202224 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) i c = 800 a , c ge = 150 nf, v ce = 1800v , t j = 125c 6 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet i c [a] v ce [v] i r [a] v r [v] 0 200 400 600 800 1000 1200 1400 1600 1800 0 500 1000 1500 2000 2500 3000 3500 ic,modul ic,chip sicherer arbeitsbereich igbt (rbsoa) r g,off = 1,8 w , c ge = 150 nf reverse bias safe operation area igbt (rbsoa) t vj = 125c 0 200 400 600 800 1000 1200 1400 1600 1800 0 500 1000 1500 2000 2500 3000 3500 sicherer arbeitsbereich diode (soa) t vj = 125c safe operation area diode (soa) 7 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 2,38 6,49 1,93 2,20 t i [sec] : igbt 0,0068 0,0642 0,3209 2,0212 r i [k/kw] : diode 4,76 12,98 3,86 4,40 t i [sec] : diode 0,0068 0,0642 0,3209 2,0212 transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0,0001 0,001 0,01 0,1 0,001 0,01 0,1 1 10 zth:igbt zth:diode 8 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
technische information / technical information igbt-module igbt-modules fd 800 r 33 kf2 - k datenblatt data sheet geh?usema?e / schaltbild package outline / circuit diagram 9 (9) datenblatt fd 800 r 33 kf2 - k 20.07.99
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