?2002 fairchild semiconductor corporation fgl60n100d rev. a igbt fgl60n100d fgl60n100d general description insulated gate bipolar transistors (igbts) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. these devices are well suitable for ih applications features ? high speed switching ? low saturation voltage : v ce(sat) = 2.5v @ i c = 60a ? high input impedance ? built-in fast recovery diode absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description fgl60n100d units v ces collector-emitter voltage 1000 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c60 a collector current @ t c = 100 c42 a i cm (1) pulsed collector current 120 a i f diode continuous forward current @ t c = 100 c15 a p d m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 c 176 w maximum power dissipation @ t c = 100 c70 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.71 c / w r jc (diode) thermal resistance, junction-to-case -- 2.08 c / w r ja thermal resistance, junction-to-ambient -- 25 c / w application home appliance, induction heater, ih jar, micro wave oven g c e to-264 g c e g c e
fgl60n100d rev. a fgl60n100d ?2002 fairchild semiconductor corporation electrical characteristics of igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics i ces collector cut-off current v ce = 1000v, v ge = 0v -- -- 1.0 ma i ges g-e leakage current v ge = 25, v ce = 0v -- -- 500 na on characteristics v ge(th) g-e threshold voltage i c = 60ma, v ce = v ge 4.0 5.0 7.0 v v ce(sat) collector to emitter saturation voltage i c = 10a , v ge = 15v -- 1.6 2.0 v i c = 60a , v ge = 15v -- 2.5 2.9 v dynamic characteristics c ies input capacitance v ce =10v , v ge = 0v, f = 1mhz -- 6300 -- pf c oes output capacitance -- 160 -- pf c res reverse transfer capacitance -- 140 -- pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 60a, r g = 51 ? , v ge =15v, resistive load, t c = 25 c -- 160 400 ns t r rise time -- 360 700 ns t d(off) turn-off delay time -- 410 700 ns t f fall time -- 240 330 ns q g total gate charge v ce = 600 v, i c = 60a, v ge = 15v -- 230 300 nc q ge gate-emitter charge -- 45 -- nc q gc gate-collector charge -- 80 -- nc symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 15a -- 1.2 1.7 v i f = 60a -- 1.8 2.1 v t rr diode reverse recovery time i f = 60a di/dt = -20a/us 1.2 1.5 us i r instantaneous reverse current v rrm = 1000v -- 0.05 2 ua
fgl60n100d rev. a fgl60n100d ?2002 fairchild semiconductor corporation -50 0 50 100 150 1 2 3 i c =10a 30a 60a 80a common emitter v ge =15v collector-emitter voltage, v ce [v] case temperature, t c [ ] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = - 40 o c i c =10a 80a 60a 30a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at varient current level fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 012345 0 20 40 60 80 100 common emitter t c =25 v ge =6v 7v 15v 10v 9v 8v 20v collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 20 40 60 80 100 common emitter v ge =15v 25 125 collector current, i c [a] collector-emitter voltage, v ce [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c =125 i c =10a 80a 60a 30a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c =25 i c =10a 80a 60a 30a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
fgl60n100d rev. a fgl60n100d ?2002 fairchild semiconductor corporation 0.1 1 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 cies coes cres capacitance [pf] collector-emitter voltage [v] 0 50 100 150 200 10 100 1000 10000 v cc =600v, i c =60a v ge = 15v tdoff tdon tr tf switching time [ns] gate resistance, r g [ ? ] fig 7. capacitance characteristics fig 8. switching characteristics vs. gate resistance fig 9. switching characteristics vs. collector current fig 10. gate charge characteristics fig 11. soa characteristics fig 12. transient thermal impedance of igbt 10 20 30 40 50 60 100 1000 v cc =600v, rg=51 ? v ge = 15v, t c =25 tdon tr tf tdoff switching time [ns] collector current, i c [a] 0 50 100 150 200 250 300 0 5 10 15 20 common emitter v cc =600v, r l =10 ? t c =25 gate-emitter voltage,v ge [v] gate charge, q g [nc] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response, z jc [ /w] rectangular pulse duration [sec] 1 10 100 1000 0.1 1 10 100 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1ms dc operation i c max. (pulsed) i c max. (continuous) collector current , i c [a] collector-emitter voltage, v ce [v]
fgl60n100d rev. a fgl60n100d ?2002 fairchild semiconductor corporation 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 t c = 100 forward voltage, v fm [v] forward current, i f [a] 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i rr t rr i f =60a t c =25 di/dt [a/ ? ] reverse recovery time, t rr [ ? ] 0 20 40 60 80 100 120 reverse recovery current, i rr [a] fig 14. reverse recovery characteristics vs. di/dt fig 13. forward characteristics fig 15. reverse recovery characteristics vs. forward current fig 16. reverse current vs. reverse voltage fig 17. junction capacitance 10 20 30 40 50 60 0.4 0.6 0.8 1.0 1.2 i rr t rr forward current, i f [a] reverse recovery time, t rr [ ? ] 4 6 8 10 12 di/dt=-20a/ ? t c =25 reverse recovery current, i rr [a] 0 300 600 900 1e-3 0.01 0.1 1 10 100 1000 t c = 150 t c = 25 reverse current, i r [ua] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 250 t c = 25 capacitance, c j [pf] reverse voltage, v r [v]
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product folder - fairchild p/n fgl60n100d - copak discrete igbt fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company fgl60n100d copak discrete igbt related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging general description insulated gate bipolar transistors (igbts) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. these devices are well suitable for ih applications back to top features l high speed switching l low saturation voltage : v ce(sat) = 2.5v @ ic = 60a l high input impedance l built-in fast recovery diode back to top applications l home appliance, induction heater, ih jar, micro wave oven back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging product product status package type leads packing method file:///h|/imaging/bitting/cpl/20020725_1/07252002_10/fair/07252002/fgl60n100d.html (1 of 2) [26-jul-2002 10:57:03 am]
product folder - fairchild p/n fgl60n100d - copak discrete igbt FGL60N100DTU full production to-264 3 rail back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///h|/imaging/bitting/cpl/20020725_1/07252002_10/fair/07252002/fgl60n100d.html (2 of 2) [26-jul-2002 10:57:03 am]
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