1 edition 1.2 august 1999 item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 57.6 -65 to +175 175 t c = 25 ? c v v w ? c ? c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 ? c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 32.0 and -5.6 ma respectively with gate resistance of 50 w . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 5800 8700 - 2900 - -1.0 -2.0 -3.5 -5.0 - - 10.5 11.5 - -40- 40.5 41.5 - v ds = 5v, i ds = 300ma v ds = 5v, i ds = 3400ma v ds = 5v, v gs = 0v i gs = -300 a v ds =10v, i ds = 0.55 i dss (typ.), f = 3.7 ~ 4.2 ghz, z s =z l = 50 ohm f = 4.2 ghz, ? f = 10 mhz 2-tone test p out = 30.5dbm s.c.l. ma ms v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 3250 3800 ma i dsr im 3 h add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 ? c) channel to case thermal resistance - 2.3 2.6 ? c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ik 10v x i dsr x r th channel temperature rise -- 80 ? c ? t ch description the FLM3742-12F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 41.5dbm (typ.) ?high gain: g 1db = 11.5db (typ.) ?high pae: h add = 40% (typ.) ?low im 3 = -46dbc@po = 30.5dbm ?broad band: 3.7 ~ 4.2ghz ?impedance matched zin/zout = 50 w ?hermetically sealed package FLM3742-12F c-band internally matched fet
2 FLM3742-12F c-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( ? c) 50 60 40 30 20 10 total power dissipation (w) output power & im 3 vs. input power v ds =10v f 1 = 4.2 ghz f 2 = 4.21 ghz 2-tone test 17 19 23 25 21 input power (s.c.l.) (dbm) s.c.l.: single carrier level 33 35 37 29 31 27 -50 -40 -30 -20 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) output power vs. frequency 3.7 pin=31dbm 27dbm 29dbm 23dbm 25dbm 3.8 3.9 4.0 4.1 4.2 frequency (ghz) 38 40 42 36 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 3.95 ghz 24 28 26 30 32 input power (dbm) 42 38 40 34 36 30 45 60 15 output power (dbm) h add p out h add (%)
3 FLM3742-12F c-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 ? +90 ? 0 ? -90 ? s 21 s 12 100 250 3.5ghz 3.5ghz 3.5ghz 3.5ghz 3.6 3.6 3.6 3.6 3.8 3.8 3.8 3.8 4.0 4.0 4.0 4.0 4.2 4.2 4.2 4.2 4.4 4.4 4.4 4.4 0.2 0.1 4 6 8 scale for |s 21 | scale for |s 12 | 2 s-parameters v ds = 10v , i ds = 3400ma frequency s1 1 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 3500 .508 176.8 4.905 -4.5 .066 -63.8 .181 159.5 3600 .551 152.3 4.604 -27.9 .066 -86.9 .189 136.0 3700 .571 134.7 4.379 -49.9 .066 -107.5 .200 1 16.6 3800 .558 1 18.2 4.277 -70.9 .070 -129.0 .214 96.9 3900 .514 102.3 4.258 -92.5 .072 -149.8 .219 73.8 4000 .434 83.6 4.333 -1 15.1 .078 -172.3 .223 44.2 4100 .296 58.4 4.402 -140.2 .083 163.6 .234 7.4 4200 .151 2.9 4.390 -167.6 .084 137.7 .265 -37.5 4300 .203 -102.6 4.138 163.3 .083 109.0 .330 -80.1 4400 .402 -143.5 3.626 134.3 .074 81.6 .401 -1 16.0
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1 138, u.s.a. phone: (408) 232-9500 f ax: (408) 428-91 1 1 www .fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 f ax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. 1999 fujitsu compound semiconduct or, inc. printed in u.s.a. fcsi0499m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLM3742-12F c-band internally matched fet 4-r 1.3 0.15 (0.051) 0.6 (0.024) 14.9 (0.587) 20.4 0.3 (0.803) 24 0.5 (0.945) 5.5 max. (0.217) 2.4 0.15 (0.094) 0.1 (0.004) 1.4 (0.055) 17.4 0.3 (0.685) 8.0 0.2 (0.315) 2.0 min. (0.079) 2.0 min. (0.079) case style "ik" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 1 3 2
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