hzs-l series silicon epitaxial planar zener diode for low noise application ade-208-121a(z) rev 1 features diode noise level of this series is approximately 1/3-1/10 lower than the hz series. low leakage, low zener impedance and maximum power dissipation of 400 mw are ideally suited for stabilized power supply, etc. wide spectrum from 5.2v through 38v of zener voltage provide flexible application. suitable for 5mm-pitch high speed automatic insertion. ordering information type no. mark package code hzs-l series type no. mhd outline 1. cathode 2. anode cathode band type no. 1 2 b 2 7
hzs-l series 2 absolute maximum ratings (ta = 25 c) item symbol value unit power dissipation pd 400 mw junction temperature tj 200 c storage temperature tstg ?5 to +175 c electrical characteristics (ta = 25 c) zener voltage reverese current dynamic resistance v z (v)* 1 test condition i r ( m a) test condition r d ( w ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs6l a1 5.2 5.5 0.5 1 2.0 150 0.5 a2 5.3 5.6 a3 5.4 5.7 b1 5.5 5.8 80 0.5 b2 5.6 5.9 b3 5.7 6.0 c1 5.8 6.1 60 0.5 c2 6.0 6.3 c3 6.1 6.4 hzs7l a1 6.3 6.6 0.5 1 3.5 60 0.5 a2 6.4 6.7 a3 6.6 6.9 b1 6.7 7.0 b2 6.9 7.2 b3 7.0 7.3 c1 7.2 7.6 c2 7.3 7.7 c3 7.5 7.9 hzs9l a1 7.7 8.1 0.5 1 6.0 60 0.5 a2 7.9 8.3 a3 8.1 8.5 note: 1. tested with dc.
hzs-l series 3 zener voltage reverese current dynamic resistance v z (v)* 1 test condition i r ( m a) test condition r d ( w ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs9l b1 8.3 8.7 0.5 1 6.0 60 0.5 b2 8.5 8.9 b3 8.7 9.1 c1 8.9 9.3 c2 9.1 9.5 c3 9.3 9.7 hzs11l a1 9.5 9.9 0.5 1 8.0 80 0.5 a2 9.7 10.1 a3 9.9 10.3 b1 10.2 10.6 b2 10.4 10.8 b3 10.7 11.1 c1 10.9 11.3 c2 11.1 11.6 c3 11.4 11.9 hzs12l a1 11.6 12.1 0.5 1 10.5 80 0.5 a2 11.9 12.4 a3 12.2 12.7 b1 12.4 12.9 b2 12.6 13.1 b3 12.9 13.4 c1 13.2 13.7 c2 13.5 14.0 c3 13.8 14.3 hzs15l 1 14.1 14.7 0.5 1 13.0 80 0.5 2 14.5 15.1 3 14.9 15.5 hzs16l 1 15.3 15.9 0.5 1 14.0 80 0.5 2 15.7 16.5 3 16.3 17.1 note: 1. tested with dc.
hzs-l series 4 zener voltage reverese current dynamic resistance v z (v)* 1 test condition i r ( m a) test condition r d ( w ) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs18l 1 16.9 17.7 0.5 1 15.0 80 0.5 2 17.5 18.3 3 18.1 19.0 hzs20l 1 18.8 19.7 0.5 1 18.0 100 0.5 2 19.5 20.4 3 20.2 21.1 hzs22l 1 20.9 21.9 0.5 1 20.0 100 0.5 2 21.6 22.6 3 22.3 23.3 hzs24l 1 22.9 24.0 0.5 1 22.0 120 0.5 2 23.6 24.7 3 24.3 25.5 hzs27l 1 25.2 26.6 0.5 1 24.0 150 0.5 2 26.2 27.6 3 27.2 28.6 hzs30l 1 28.2 29.6 0.5 1 27.0 200 0.5 2 29.2 30.6 3 30.2 31.6 hzs33l 1 31.2 32.6 0.5 1 30.0 250 0.5 2 32.2 33.6 3 33.2 34.6 hzs36l 1 34.2 35.7 0.5 1 33.0 300 0.5 2 35.3 36.8 3 36.4 38.0 notes: 1. tested with dc. 2. type no. is as follows; hzs6a1l, hzs6a2l, hzs36-3l
hzs-l series 5 main characteristic zener current i z (a) zener voltage v z (v) fig.1 zener current vs. zener voltage 0510 15 20 25 30 35 40 50 40 30 20 10 0 ?0 ?0 ?0 ?0 ?0 0.10 0.08 0.06 0.04 0.02 0 ?.02 ?.04 ?.06 ?.08 ?.10 %/? mv/? fig.2 temperature coefficient vs. zener voltage fig.3 power dissipation vs. ambient temperature zener voltage v (v) zener voltage temperature coefficient (%/?) z g z zener voltage temperature coefficient (mv/?) z g 5 10 15 20 25 30 35 40 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 0 500 400 300 200 100 200 150 100 50 0 ambient temperature ta (?) power dissipation p (mw) d 0 2.5 mm 3 mm printed circuit board 100 180 1.6t mm quality: paper phenol l l=5 mm l=10 mm (publication value) hzs6b2l hzs16-2l hzs9b2l hzs12b2l hzs20-2l hzs24-2l hzs30-2l hzs36-2l
hzs-l series 6 package dimensions unit : mm 2 expanded drawing of marking 26.0 min 2.4 max 2.0 max 0.4 f f 26.0 min cathode band (black) type no. (black) b 2 7 b 7 12 hitachi code jedeccode eiajcode weight(g) ? ? ? 0.084 1. cathode 2. anode abbreviation of type name type name without hzs l. zener voltage classification symbol equal to b1 or b3.
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