microsemi watertown division 580 pleasant street, watertown, ma. 02172, 617-926-0404, fax: 617-924-1235 page 1 copyright ? 2000 msc1541.pdf 2000-08-08 www. microsemi . com watertown division upf1n50 surface mount n channel mosfet preliminary description descriptiondescription description power mos v(r) mosfet in ultra low profile patented powermite 3(tm) package provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance, cost effectiveness in the industry's smallest high power surface mount package. the upf1n50 is ideal for ultra small motor control and switch mode power supply applications. the powermite 3 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. w ith power dissipation levels up to 1.8 w atts, the powermite 3 offers similar power handling capability to device 4 times its size by using a patented full metal wrap around bottom. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features key features key features key features !" powermite 3 surface mount package !" low on-state resistance !" high frequency switching !" ultra low leakage current !" integral heat sink / locking tabs !" supplied in 16mm tape and reel ? 6000 units/reel !" superior low thermal and electrical capability applications/benefit applications/benefitapplications/benefit applications/benefits ss s ? motor control ? switch mode power supplies maximum ratings maximum ratingsmaximum ratings maximum ratings parameter symbol value unit drain-to-source voltage v dss 500 volts drain-to-source voltage v gs +/-20 volts continuous drain current @ tc = 25oc i d1 1.0 amps continuous drain current @ tc = 100oc i d2 0.8 amps operating & storage junction temperature range t j, t stg - 40 to + 125 oc total power dissipation pd (1) 1.8 watts thermal characterist thermal characteristthermal characterist thermal characteristics icsics ics s teady - state t hermal r esistance : symbol value unit junction-to-tab r j-tab 2.0 c/watts (1) junction-to-ambient r ja (1) 55 c/watts (2) junction-to-ambient r ja (2) 120 c/watts (1) mounted on 2? square by 0.06? thick fr4 board with a 1? 1? square 2-ounce cooper pattern. (2) mounted on 0.06? thick fr4 board, using recommended footprint. mechanical character mechanical charactermechanical character mechanical characteristics isticsistics istics powermite 3 surface mount package ? footprint area of 16.51 mm 2 ? case: molded epoxy ? meets ul94vo at 1/8 inch ? weight: 72 milligrams ? lead and mounting temperatures: 260 0 c max for 10 seconds u u p p f f 1 1 n n 5 5 0 0
microsemi watertown division 580 pleasant street, watertown, ma. 02172, 617-926-0404, fax: 617-924-1235 page 2 copyright ? 2000 msc1541.pdf 2000-08-08 www. microsemi . com watertown division upf1n50 surface mount n channel mosfet preliminary static electrical ch static electrical ch static electrical ch static electrical characteristics aracteristics aracteristics aracteristics upf1n50 symbol characteristics / test conditions min typ max units bv dss drain to source breakdown voltage (vgs=0v, id=0.25ma) 500 volts v gs(th)2 gate threshold voltage (vds vgs, id=1ma, tj=37 c ) 2.0 3.4 4.0 volts v gs(th)1 gate threshold voltage (vds vgs, id=1ma, tj=25 c ) 3.5 volts r ds(on)1 drain to source on-state resistance (vgs=10v, id=1.0a , tj=25 c ) 2.7 3.5 ohms i dss1 zero gate voltage-drain current (vds=400v,vgs=0v,tj= 25 c ) 2 ua i dss2 zero gate voltage-drain current (vds=400v,vgs=0v,tj=125 c ) 250 ua i gss1 gate to source leakage current (vgs= 20v, vds=0v, tj = 25 c ) 100 na static electrical ch static electrical ch static electrical ch static electrical characteristics aracteristics aracteristics aracteristics symbol characteristic test conditions min typ max unit ciss coss input capacitance output capacitance v gs = 0 v v ds = 50 v 200 30 250 50 pf pf crss reverse transfer capacitance f = 1mh z 15 20 pf qg qgs qgd total gate charge gate to source charge gate to drain charge v gs = 10 v v ds = 0.5 v dss i d = 10 ma 20 1.0 10 nc nc nc td (on) turn-on delay time resistive switching (25 c) 20 ns tr rise time v gs = 10 v, v ds = 0.5 bv dss 10 ns td turn-off delay time i d = 20 ma 30 ns tf fall time rg = 1.6 ? 30 us v sd diode forward voltage v gs = 0 v, i s = 1 a, t j = 25 c 0.85 1.2 v trr reverse recovery time i s = 1 a, dis/dt = 100 a/us 150 ns qrr reverse recovery charge i s = 1 a, dis/dt = 100 a/us 0.8 uc u u p p f f 1 1 n n 5 5 0 0
microsemi watertown division 580 pleasant street, watertown, ma. 02172, 617-926-0404, fax: 617-924-1235 page 3 copyright ? 2000 msc1541.pdf 2000-08-08 www. microsemi . com watertown division upf1n50 surface mount n channel mosfet preliminary mechanical specifications u u p p f f 1 1 n n 5 5 0 0
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