PF08122B mos fet power amplifier module for e-gsm and dcs1800 dual band handy phone ade-208-1400c (z) target specifications 4th edition feb. 2001 application dual band amplifier for e-gsm (880 mhz to 915 mhz) and dcs1800 (1710 mhz to 1785 mhz). for 3.5 v & gprs class12 operation compatible features all in one including output matching circuit simple external circuit one power control pin with one band switch high gain 3stage amplifier : 0 dbm input typ lead less thin & small package : 8 13.75 1.6 mm typ high efficiency : (55)% typ at 35.0 dbm for e-gsm (50)% typ at 32.5 dbm for dcs1800 pin arrangement 1: 2: 3: 4: 5: 6: 7: 8: g: pin gsm vapc vdd1 pout gsm pout dcs vdd2 vctl pin dcs gnd rf-k-8a 1 2 3 4 g 8 7 5 6 g g g
PF08122B 2 absolute maximum ratings (tc = 25 c) item symbol rating unit remark supply voltage vdd 7.0 v at no-operation 5.0 v at operation (50 w load) supply current idd gsm 3.5 a idd dcs 2a vctl voltage vctl 4 v vapc voltage vapc 4 v input power pin 10 dbm operating case temperature tc (op) - 25 to +85 c storage temperature tstg - 30 to +100 c output power pout gsm 5w pout dcs 3w note: the maximum ratings shall be valid over both the e-gsm-band (880 to 915 mhz), and the dcs1800-band (1710 to 1785 mhz). electrical characteristics for dc (tc = 25 c) item symbol min typ max unit test condition drain cutoff current ids ?? 20 m a vdd = 4.7 v, vapc = 0 v, vctl = 0.2 v vapc control current iapc ?? 2.0 ma vapc = 2.2 v vctl control current ictl ?? 2 m a vctl = 3 v
PF08122B 3 electrical characteristics for gsm900 band (tc = 25 c) test conditions unless otherwise noted: f = 880 to 915 mhz, vdd1 = vdd2 = 3.5 v, pin = 0 dbm, vctl = 2.0 v, rg = rl = 50 w , tc = 25 c, pulse operation with pulse width 577 m s and duty cycle 2:8 shall be used. item symbol min typ max unit test condition frequency range f 880 ? 915 mhz band select (gsm active) vctl 2.0 ? 2.8 v input power pin ? 0 2 dbm control voltage range vapc 0.2 ? 2.2 v supply voltage vdd 3.0 3.5 4.5 v total efficiency h t (48) (55) ? % pout gsm = 35 dbm, 2nd harmonic distortion 2nd h.d. ?- 45 - 35 dbc vapc = controlled 3rd harmonic distortion 3rd h.d. ?- 45 - 35 dbc 4th~8th harmonic distortion 4th~8th h.d. ??- 35 dbc input vswr vswr (in) ? 1.5 3 ? output power (1) pout (1) 35.0 36.0 ? dbm vapc = 2.2 v output power (2) pout (2) 33.5 34.5 ? dbm vdd = 3.1 v, vapc = 2.2 v, tc = +85 c idd at low power ?? 100 (300) ma pout gsm = 7 dbm isolation ??- 50 - 37 dbm vapc = 0.2 v, pin = 0 dbm isolation at dcs rf-output when gsm is active ??- 30 - 20 dbm pout gs m = 35 dbm, measured at f = 1760 to 1830 mhz switching time t r , t f ? 12 m s pout gsm = 5 to 35 dbm stability ? no parasitic oscillation ? vdd = 3.1 to 4.5 v, pout 35 dbm, vapc gs m 2.2 v, rg = 50 w , tc = 25 c, output vswr = 6 : 1 all phases load vswr tolerance ? no degradation ? vdd = 3.1 to 4.5 v, pout gs m 35 dbm, vapc gs m 2.2 v, rg = 50 w , t = 20 sec., tc = 25 c, output vswr = 10 : 1 all phases slope pout/vapc ?? 180 200 db/v pout gsm = 5 to 35 dbm am output ?? 20 30 % pout gs m = 5 to 35 dbm, 4% am modulation at input 50 khz modulation frequency
PF08122B 4 electrical characteristics for dcs1800 band (tc = 25 c) test conditions unless otherwise noted: f = 1710 to 1785 mhz, vdd1 = vdd2 = 3.5 v, pin = 0 dbm, vctl = 0.2 v, rg = rl = 50 w , tc = 25 c, pulse operation with pulse width 577 m s and duty cycle 2:8 shall be used. item symbol min typ max unit test condition frequency range f 1710 ? 1785 mhz band select (dcs active) vctl 0 ? 0.2 v input power pin ? 0 2 dbm control voltage range vapc 0.2 ? 2.2 v supply voltage vdd 3.0 3.5 4.5 v total efficiency h t (43) (50) ? % pout dcs = 32.5 dbm, 2nd harmonic distortion 2nd h.d. ?- 45 - 35 dbc vapc = controlled 3rd harmonic distortion 3rd h.d. ?- 45 - 35 dbc 4th~8th harmonic distortion 4th~8th h.d. ?? ?5 dbc input vswr vswr (in) ? 1.5 3 ? output power (1) pout (1) 32.5 33.5 ? dbm vapc = 2.2 v output power (2) pout (2) 31.0 32.0 ? dbm vdd = 3.1 v, vapc = 2.2 v, tc = +85 c, pin dcs = 0 dbm idd at low power ?? 50 (100) ma pout dcs = 5 dbm isolation ??- 47 - 37 dbm vapc = 0.2 v, pin dcs = 0 dbm switching time t r , t f ? 12 m s pout dcs = 0 to 32.5 dbm stability ? no parasitic oscillation ? vdd = 3.1 to 4.5 v, pout d cs 32.5 dbm, vapc 2.2 v, rg = 50 w , output vswr = 6 : 1 all phases load vswr tolerance ? no degradation ? vdd = 3.1 to 4.5 v, pout d cs 32.5 dbm, vapc 2.2 v, rg = 50 w , t = 20 sec., output vswr = 10 : 1 all phases slope pout/vapc ?? 180 200 db/v pout dcs = 0 to 32.5 dbm am output ?? 20 30 % pout d cs = 0 to 32.5 dbm, 4% am modulation at input 50 khz modulation frequency
PF08122B 5 circuit diagram pin8 pin dcs pin1 pin gsm pin4 pout gsm pin5 pout dcs bias circuit pin7 vctl pin3 vdd1 pin6 vdd2 pin2 vapc
PF08122B 6 package dimensions 1.6 0.2 8.0 0.3 8.0 0.3 13.75 0.3 87 g g g 65 12 g 34 (upper side) (bottom side) (3.7) (1.1) (0.3) (0.3) (1.1) (3.275) (3.275) (5.375) (5.375) (3.7) (3.7) (2.2) hitachi code jedec eiaj mass (reference value) rf-k-8a ? ? ? unit: mm 1 2 3 4 g 8 7 5 6 g g g (1.5) (1.5) (3.7) (1.4) (1.6) (3.7) (1.6) (1.6) (1.6) (1.3) (0.7) (2.4) (2.4) 1: 2: 3: 4: 5: 6: 7: 8: g: pin gsm vapc vdd1 pout gsm pout dcs vdd2 vctl pin dcs gnd remark: coplanarity of bottom side of terminals are less than 0 0.1mm.
PF08122B 7 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher strae 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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