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| geometry process details principal device types cedm8001 cmndm8001 gross die per 6 inch wafer 123,000 process CP761R small signal mosfet p-channel enhancement-mode mosfet chip die size 14.2 x 14.2 mils die thickness 3.9 mils gate bonding pad area 3.94 x 3.94 mils source bonding pad area 3.94 x 7.08 mils top side metalization al-si - 35,000? back side metalization au - 12,000? www.centralsemi.com r1 (2-september 2010)
process CP761R typical electrical characteristics www.centralsemi.com r1 (2-september 2010) |
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