? 2009 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 650 a v ge = 0v t j = 125c 5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 50a, v ge = 15v, note 1 2.1 2.5 v t j = 125c 1.8 v hiperfast tm igbts with diode symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (limited by leads) 75 a i c110 t c = 110c 60 a i cm t c = 25c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125c, r g = 10 i cm = 100 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25c 480 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.3/11.5 nm/lb.in. weight 30 g ds99177a(01/09) IXGN60N60C2 IXGN60N60C2d1 c2-class high speed igbts features z international standard package minibloc z aluminium nitride isolation - high power dissipation z anti-parallel ultra fast diode z isolation voltage 3000 v~ z low v ce(sat) for minimum on-state conduction losses z mos gate turn-on - drive simplicity z low collector-to-case capacitance (< 50 pf) z low package inductance (< 5 nh) - easy to drive and to protect applications z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switch-mode and resonant-mode power supplies advantages z easy to mount with 2 screws z space savings z high power density v ces = 600v i c110 = 60a v ce(sat) 2.5v t rr = 35ns sot-227b, minibloc g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c e153432 e e 60c2d1 60c2
IXGN60N60C2 IXGN60N60C2d1 ixys reserves the right to change limits, test conditions and dimensions. sot-227b minibloc symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 40 58 s c ies 4750 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 530 pf c res 65 pf q g 146 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 28 nc q gc 50 nc t d(on) 18 ns t ri 25 ns t d(off) 95 150 ns t fi 35 ns e off 0.48 0.80 mj t d(on) 18 ns t ri 25 ns e on 0.90 mj t d(off) 130 ns t fi 80 ns e off 1.20 mj r thjc 0.26 c/w r thcs 0.05 c/w inductive load, t j = 125c i c = 50a, v ge = 15v v ce = 400v, r g = 2 inductive load, t j = 25c i c = 50a, v ge = 15 v v ce = 400v, r g = 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25c, unless oherwise specified) min. typ. max. v f 2.1 v 1.4 v i rm 8.3 a t rr 35 ns r thjc 0.85 c/w i f = 60a, v ge = 0v, note 1 t j = 150c i f = 60a, -di/dt = 100a/ s, t j = 100c v r = 100v, v ge = 0v, i f = 1a, -di/dt = 200a/ s, v r = 30v,v ge = 0v note 1: pulsetest, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2009 ixys corporation, all rights reserved IXGN60N60C2 IXGN60N60C2d1 fig. 2. extended output characteristics @ 25 deg. c 0 25 50 75 10 0 12 5 15 0 17 5 200 11 .5 22.533.544.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 9v 5v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 10 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 10 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 7v 5v 9v fig. 6. input admittance 0 25 50 75 10 0 12 5 15 0 17 5 200 3.5 44.5 55.5 66.577.588.5 v ge - volts i c - amperes t j = 1 25 o c 25 o c -40 o c fig. 4. temperature dependence of v ce(sat) 0.5 0.6 0.7 0.8 0.9 1 1. 1 1. 2 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalize d i c = 1 00a i c = 50a i c = 25a v g e = 1 5v fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 1. 5 2 2.5 3 3.5 4 4.5 5 5 6 7 8 9 10 111213 1415 v ge - volts v ce - volts t j = 25 o c i c = 1 00a 50a 25a
IXGN60N60C2 IXGN60N60C2d1 ixys reserves the right to change limits, test conditions and dimensions. fig. 12. capacitance 10 10 0 10 0 0 10 0 0 0 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - p f c ies c oes c res f = 1 m hz fig. 11. gate charge 0 3 6 9 12 15 0 20406080100120140160 q g - nanocoulombs v g e - volts v c e = 300v i c = 50a i g = 1 0ma fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 10 0 0 25 50 75 100 125 150 175 200 i c - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 8. dependence of e off on r g 0 1 2 3 4 5 6 24681 01 21 41 6 r g - ohms e off - millijoule s i c = 75a i c = 25a t j = 1 25 o c v ge = 1 5v v ce = 400v i c = 50a i c = 1 00a fig. 9. dependence of e o ff on i c 0 1 2 3 4 5 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoule s r g = 2 ohms r g = 1 0 ohms - - - - - t j = 1 25 o c v g e = 1 5v v c e = 400v t j = 25 o c fig. 10. dependence of e off on temperature 0 1 2 3 4 5 25 50 75 100 125 t j - degrees centigrade e off - millijoule s i c = 1 00a i c = 50a i c = 25a v g e = 1 5v v c e = 400v r g = 2 ohms r g = 1 0 ohms - - - - - i c = 75a fig. 12. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_60n60c2(7y)12-11-08-a
? 2009 ixys corporation, all rights reserved IXGN60N60C2 IXGN60N60C2d1 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 2x61-06a z thjc fig. 27. maximum transient thermal impeadance juection to case (for diode) t vj = 100c v r = 300v t vj = 100c v r = 300v t vj = 150c 100c 25c i f = 120a, 60a, 30a i rm q rm i f = 30a, 60a, 120a t vj = 100c v r = 300v t rr v fr i f = 120a, 60a, 30a t vj = 100c i f = 60a fig. 13. forward current i f versus v f fig. 15. peak reverse current i rm versus -di f /dt fig. 14. reverse recorvery charge q r versus -di f /dt fig. 18. peak forward voltage v rm and t rr versus -di f /dt fig. 17. recorvery time t rr versus -di f /dt fig. 16. dynamic paraments q r, i rm versus t vj fig. 27. maximum transient thermal impedance (for diode) 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width [ s ] z (th)jc [ oc / w ]
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