Part Number Hot Search : 
MBG3363K NJU6318 SFR304 48VDC 68HC908 11007 X88C75LI HCT40
Product Description
Full Text Search
 

To Download IXGN60N60C2 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? 2009 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 650 a v ge = 0v t j = 125c 5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 50a, v ge = 15v, note 1 2.1 2.5 v t j = 125c 1.8 v hiperfast tm igbts with diode symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (limited by leads) 75 a i c110 t c = 110c 60 a i cm t c = 25c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125c, r g = 10 i cm = 100 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25c 480 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.3/11.5 nm/lb.in. weight 30 g ds99177a(01/09) IXGN60N60C2 IXGN60N60C2d1 c2-class high speed igbts features z international standard package minibloc z aluminium nitride isolation - high power dissipation z anti-parallel ultra fast diode z isolation voltage 3000 v~ z low v ce(sat) for minimum on-state conduction losses z mos gate turn-on - drive simplicity z low collector-to-case capacitance (< 50 pf) z low package inductance (< 5 nh) - easy to drive and to protect applications z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switch-mode and resonant-mode power supplies advantages z easy to mount with 2 screws z space savings z high power density v ces = 600v i c110 = 60a v ce(sat) 2.5v t rr = 35ns sot-227b, minibloc g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c e153432 e e 60c2d1 60c2
IXGN60N60C2 IXGN60N60C2d1 ixys reserves the right to change limits, test conditions and dimensions. sot-227b minibloc symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 40 58 s c ies 4750 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 530 pf c res 65 pf q g 146 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 28 nc q gc 50 nc t d(on) 18 ns t ri 25 ns t d(off) 95 150 ns t fi 35 ns e off 0.48 0.80 mj t d(on) 18 ns t ri 25 ns e on 0.90 mj t d(off) 130 ns t fi 80 ns e off 1.20 mj r thjc 0.26 c/w r thcs 0.05 c/w inductive load, t j = 125c i c = 50a, v ge = 15v v ce = 400v, r g = 2 inductive load, t j = 25c i c = 50a, v ge = 15 v v ce = 400v, r g = 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25c, unless oherwise specified) min. typ. max. v f 2.1 v 1.4 v i rm 8.3 a t rr 35 ns r thjc 0.85 c/w i f = 60a, v ge = 0v, note 1 t j = 150c i f = 60a, -di/dt = 100a/ s, t j = 100c v r = 100v, v ge = 0v, i f = 1a, -di/dt = 200a/ s, v r = 30v,v ge = 0v note 1: pulsetest, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2009 ixys corporation, all rights reserved IXGN60N60C2 IXGN60N60C2d1 fig. 2. extended output characteristics @ 25 deg. c 0 25 50 75 10 0 12 5 15 0 17 5 200 11 .5 22.533.544.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 9v 5v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 10 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 10 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 7v 5v 9v fig. 6. input admittance 0 25 50 75 10 0 12 5 15 0 17 5 200 3.5 44.5 55.5 66.577.588.5 v ge - volts i c - amperes t j = 1 25 o c 25 o c -40 o c fig. 4. temperature dependence of v ce(sat) 0.5 0.6 0.7 0.8 0.9 1 1. 1 1. 2 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalize d i c = 1 00a i c = 50a i c = 25a v g e = 1 5v fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 1. 5 2 2.5 3 3.5 4 4.5 5 5 6 7 8 9 10 111213 1415 v ge - volts v ce - volts t j = 25 o c i c = 1 00a 50a 25a
IXGN60N60C2 IXGN60N60C2d1 ixys reserves the right to change limits, test conditions and dimensions. fig. 12. capacitance 10 10 0 10 0 0 10 0 0 0 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - p f c ies c oes c res f = 1 m hz fig. 11. gate charge 0 3 6 9 12 15 0 20406080100120140160 q g - nanocoulombs v g e - volts v c e = 300v i c = 50a i g = 1 0ma fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 10 0 0 25 50 75 100 125 150 175 200 i c - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 8. dependence of e off on r g 0 1 2 3 4 5 6 24681 01 21 41 6 r g - ohms e off - millijoule s i c = 75a i c = 25a t j = 1 25 o c v ge = 1 5v v ce = 400v i c = 50a i c = 1 00a fig. 9. dependence of e o ff on i c 0 1 2 3 4 5 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoule s r g = 2 ohms r g = 1 0 ohms - - - - - t j = 1 25 o c v g e = 1 5v v c e = 400v t j = 25 o c fig. 10. dependence of e off on temperature 0 1 2 3 4 5 25 50 75 100 125 t j - degrees centigrade e off - millijoule s i c = 1 00a i c = 50a i c = 25a v g e = 1 5v v c e = 400v r g = 2 ohms r g = 1 0 ohms - - - - - i c = 75a fig. 12. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_60n60c2(7y)12-11-08-a
? 2009 ixys corporation, all rights reserved IXGN60N60C2 IXGN60N60C2d1 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 2x61-06a z thjc fig. 27. maximum transient thermal impeadance juection to case (for diode) t vj = 100c v r = 300v t vj = 100c v r = 300v t vj = 150c 100c 25c i f = 120a, 60a, 30a i rm q rm i f = 30a, 60a, 120a t vj = 100c v r = 300v t rr v fr i f = 120a, 60a, 30a t vj = 100c i f = 60a fig. 13. forward current i f versus v f fig. 15. peak reverse current i rm versus -di f /dt fig. 14. reverse recorvery charge q r versus -di f /dt fig. 18. peak forward voltage v rm and t rr versus -di f /dt fig. 17. recorvery time t rr versus -di f /dt fig. 16. dynamic paraments q r, i rm versus t vj fig. 27. maximum transient thermal impedance (for diode) 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width [ s ] z (th)jc [ oc / w ]


▲Up To Search▲   

 
Price & Availability of IXGN60N60C2

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X