vishay siliconix sia421dj new product document number: 73975 s-71361-rev. a, 09-jul-07 www.vishay.com 1 p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( )i d (a) q g (typ) - 30 0.035 at v gs = - 10 v - 12 a 10 nc 0.056 at v gs = - 4.5 v - 12 a s g d p- c hannel m os fet powerpak s c-70-6l- s in g le 6 5 4 1 2 3 d d d d g s s 2.05 mm 2.05 mm markin g code x x x b j x lot tr a ce ab ility a nd d a te code p a rt # code orderin g information: s ia421dj-t1-e 3 (le a d (p b )-free) notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 sec. d. see solder profile ( h ttp://www.vishay.com/ppg?73257 ). the powerpak sc70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manu facturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bo ttom side solder interconnection. e. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 80 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 12 a a t c = 70 c - 12 a t a = 25 c - 7.9 b, c t a = 70 c - 6.3 b, c pulsed drain current i dm - 35 continuous source-drain diode current t c = 25 c i s - 12 a t a = 25 c - 2.9 b, c maximum power dissipation t c = 25 c p d 19 w t c = 70 c 12 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 sec r thja 28 36 c/w maximum junction-to-case (drain) steady state r thjc 5.3 6.5 rohs compliant features ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc70 package - small footprint area - low on-resistance applications ? load switch for portable devices ? buck converter
www.vishay.com 2 document number: 73975 s-71361-rev. a, 09-jul-07 vishay siliconix sia421dj new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temperature coefficient v ds /t j i d = - 250 a - 31 mv/c v gs(th) temperature coefficient v gs(th) /t j 4 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 5.3 a 0.029 0.035 v gs = - 4.5 v, i d = - 4.2 a 0.046 0.056 forward transconductance a g fs v ds = - 15 v, i d = - 5.3 a 15 s dynamic b input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 950 pf output capacitance c oss 150 reverse transfer capacitance c rss 120 total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 7.9 a 19 29 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 7.9 a 10 15 gate-source charge q gs 3 gate-drain charge q gd 4.5 gate resistance r g f = 1 mhz 6.5 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 2.4 i d ? - 6.3 a, v gen = - 4.5 v, r g = 1 40 60 ns rise time t r 110 165 turn-off delay time t d(off) 25 40 fall time t f 12 20 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 2.4 i d ? - 6.3 a, v gen = - 10 v, r g = 1 10 15 rise time t r 12 20 turn-off delay time t d(off) 30 45 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 12 a pulse diode forward current i sm 35 body diode voltage v sd i s = - 6.3 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 6.3 a, di/dt = 100 a/s, t j = 25 c 20 30 ns body diode reverse recovery charge q rr 15 30 nc reverse recovery fall time t a 12 ns reverse recovery rise time t b 8
document number: 73975 s-71361-rev. a, 09-jul-07 www.vishay.com 3 vishay siliconix sia421dj new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 3 0 3 5 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 v d s - dr a in-to- s o u rce volt a ge (v) v g s = 10 thr u 5 v - dr a in c u rrent (a) i d v g s = 3 v v g s = 4 v 0 0.02 0.04 0.06 0.0 8 0.10 0.12 0 5 10 15 20 25 3 0 3 5 i d - dr a in c u rrent (a) - on-re s i s t a nce ( ) r d s (on) v g s = 4.5 v v g s = 10 v i d = 7.9 a 0 2 4 6 8 10 0 5 10 15 20 q g - tot a l g a te ch a rge (nc) - g a te-to- s o u rce volt a ge (v) v g s v d s = 24 v v d s = 15 v transfer characteristics capacitance on-resistance vs. junction temperature v g s - g a te-to- s o u rce volt a ge (v) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 3 .5 4.0 - dr a in c u rrent (a) i d t c = 125 c t c = 25 c t c = - 55 c c r ss v d s - dr a in-to- s o u rce volt a ge (v) 0 3 00 600 900 1200 1500 0 5 10 15 20 25 3 0 c o ss c i ss c - c a p a cit a nce (pf) t j - j u nction temper a t u re (c) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r d s (on) - on-re s i s t a nce (norm a lized) i d = 5. 3 a v g s = 10 v, 4.5 v
www.vishay.com 4 document number: 73975 s-71361-rev. a, 09-jul-07 vishay siliconix sia421dj new product typical characteristics 25 c, unless otherwise noted soure-drain diode forward voltage threshold voltage 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 t j = 150 c 10 v s d - s o u rce-to-dr a in volt a ge (v) - s o u rce c u rrent (a) i s 1 t j = 25 c 100 1.4 1.6 1. 8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v g s (th) t j - temper a t u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient v g s - g a te-to- s o u rce volt a ge (v) 0 0.02 0.04 0.06 0.0 8 0.10 0.12 0246 8 10 - on-re s i s t a nce ( ) r d s (on) 125 c 25 c i d = 5. 3 a power (w) time ( s ec) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 3 0 safe operating area, junction-to-ambient 1 0.1 1 10 100 0.01 10 1 m s - dr a in c u rrent (a) i d 0.1 t a = 25 c s ingle p u l s e 10 m s dc v d s - dr a in-to- s o u rce volt a ge (v) *v g s minim u m v g s a t which r d s (on) i ss pecified 100 s bvd ss limited 100 100 m s 1 s 10 s *limited b y r d s (on) i dm limited i d(on) limited
document number: 73975 s-71361-rev. a, 09-jul-07 www.vishay.com 5 vishay siliconix sia421dj new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 0 25 50 75 100 125 150 i d - dr a in c u rrent (a) t c - c as e temper a t u re (c) p a ck a ge limited power derating 0 5 10 15 20 25 50 75 100 125 150 t c - c as e temper a t u re (c) power di ss ip a tion (w)
www.vishay.com 6 document number: 73975 s-71361-rev. a, 09-jul-07 vishay siliconix sia421dj new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73975. normalized thermal transient im pedance, junction-to-ambient 10 - 3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 squa re w a ve p u l s e d u r a tion ( s ec) norm a lized effective tr a n s ient therm a l imped a nce 1 0.1 0.01 s ingle p u l s e t 1 t 2 note s : p dm 1. d u ty cycle, d = 2. per unit b as e = r thja = 65 c/w 3 . t jm - t a = p dm z thja (t) t 1 t 2 4. su rf a ce mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 10 - 3 10 -2 10 -4 1 0.1 0.2 0.1 d u ty cycle = 0.5 squa re w a ve p u l s e d u r a tion ( s ec) norm a lized effective tr a n s ient therm a l imped a nce 0.02 s ingle p u l s e 0.05 10 -1
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