View TIP514_6977700.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon pnp power transistors TIP514 description with to-66 package low collector saturation voltage wide area of safe operation applications for use in high-frequency drivers in aduio amplifiers pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a t c =100 20 p d total power dissipation t a =100 2 w t j junction temperature 175 t stg storage temperature -55~175
savantic semiconductor product specification 2 silicon pnp power transistors TIP514 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-10ma ; i b =0 -150 v v (br)ebo emitter-base breakdown voltage i e =-1ma ; i c =0 -5 v v ce (sat) collector-emitter saturation voltage i c =-5a; i b =-0.5a -2.0 v v be (sat) base-emitter saturation voltage i c =-5a; i b =-0.5a -2.5 v i cbo collector cut-off current v cb =-150v; i e =0 -10 a i ceo collector cut-off current v ce =-150v; i b =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-2.5a ; v ce =-4v 30 150 f t transition frequency i c =-0.5a ; v ce =-4v 40 mhz
savantic semiconductor product specification 3 silicon pnp power transistors TIP514 package outline fig.2 outline dimensions

▲Up To Search▲

Price & Availability of TIP514

	To Download TIP514 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .