1 dual p-channel 30-v (d-s) mosfet feature s ? halo gen-free ?tr e nchfet ? power mosfet ? 100 % uis tested applic ation s ? load switches - no te book pcs - desktop pcs - game stations p r oduct summary v ds (v) r ds(on) ( ) i d (a) d, e q g (typ.) - 30 0.029 at v gs = - 10 v - 8 15 nc 0.041 at v gs = - 4.5 v - 8 notes: a. surface mounted on 1" x 1" f r4 board. b. t = 10 s. c. maximum under steady state conditions is 85 c/w. d. based on t c = 25 c. e. limited by package. absolute maximum ratings t a = 25 c, u nless otherwise noted parame ter symbol li mit un it d rain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous dr ain current (t j = 150 c) t c = 25 c i d - 8.0 e a t c = 70 c - 8.0 e t a = 25 c - 7.3 a, b t a = 70 c - 5.9 a, b pulsed drain current i dm - 32 e continuous source-drain diode current t c = 25 c i s - 4.1 t a = 25 c - 2.0 a, b avalanche current l = 0.1 mh i as - 20 single-pulse avalanche energy e as 20 mj maximu m power dissipation t c = 25 c p d 5.0 w t c = 70 c 3.2 t a = 25 c 2.5 a, b t a = 70 c 1.6 a, b operating junction and stora ge t emperature range t j , t stg - 55 to 150 c ther mal resistance ratings p arameter symbol t ypical maxim u m unit ma ximum junction-to-ambient a, c t 10 s r thja 38 50 c/w maximum j unction-to-f oot steady state r thjf 20 25 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op view 2 3 4 1 rohs compliant www.din-tek.jp dt m4 9 25
2 no t e s : a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond t hose list ed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c , unless otherwise noted parame ter sym bol t est con ditions min. typ. max. un it static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temperature coefficient ' v ds /t j i d = - 250 a - 31 mv/c v gs(th) temperature coefficient ' v gs(th) /t j 4.5 gate-source thresho ld voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 3.0 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage dr ain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 5 on-state drain current a i d(on) v ds t - 10 v, v gs = - 10 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 7.3 a 0.024 0.029 : v gs = - 4.5 v, i d = - 6.2 a 0.033 0.041 forward t r ansconductance a g fs v ds = - 10 v, i d = - 9.1 a 23 s dynamic b input capacitance c is s v ds = - 15 v, v gs = 0 v, f = 1 mhz 1350 pf output capacitance c oss 215 reverse transf e r capacitance c rss 185 t otal gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 9.1 a 32 50 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 9.1 a 15 25 gate-sou rce charge q gs 4 gate-drain charg e q gd 7.5 gate resi sta nce r g f = 1 mhz 5.8 : tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 : i d # - 1 a, v gen = - 10 v, r g = 1 : 10 15 ns rise time t r 815 turn-off dela yt ime t d(off) 45 70 fall t i me t f 12 25 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 : i d # - 1 a, v gen = - 4.5 v, r g = 1 : 42 70 rise time t r 35 60 turn-off dela yt ime t d( off) 40 70 fall t i me t f 16 30 drain-source b o dy diode characteristics continous source-drain diode current i s t c = 25 c - 4.1 a pulse diode forw ard c urrent i sm - 32 body diode voltage v sd i s = - 2 a, v gs = 0 v - 0.75 - 1.2 v body diode re verse recovery time t rr i f = - 2 a, di/dt = 100 a/s , t j = 25 c 34 60 ns body diode re verse recovery charge q rr 22 40 nc reve rse reco very fall time t a 11 ns reverse recov ery rise time t b 23 z z z g l q w h n m s ' 7 0
3 typica l c har ac teri stic s 25 c, unless otherwise noted output characteristics on-resista n ce vs. drain current gate charge 0 10 20 30 40 0.0 0.5 1.0 1.5 2.0 v gs =10thr u 5 v v gs =3 v v gs =4 v v ds - drain-to- so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 01 02 03 04 0 v gs =4 . 5 v v gs =10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 09 1 8 27 36 v ds =22.5 v i d =9.1a v ds =15 v v ds =7.5 v - gate-to- so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitan ce on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0. 8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 c t c = 125 c t c =- 55 c v gs - gate-to - so u rce v oltage ( v ) - drain c u rrent (a) i d 0 600 1200 1 8 00 2400 0 6 12 1 8 24 30 c is s c oss c rss v ds - drain-to- so u rce v oltage ( v ) c - capacitance (pf) 0.6 0.9 1.2 1.5 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs =10 v v gs =4.5 v i d =7.3a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) www.din-tek.jp dt m4 9 25
4 ty pi cal ch ara cteristics 25 c, unless otherwise noted source-drain diode forw ard voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = - 50 c t j = 25 c v sd -so u rce- to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =1ma v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage s in gle pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 0246 8 10 t j = 25 c t j = 125 c i d =7.3a - on-resistance ( ) r ds(on) v gs - gate-to - so u rce v oltage ( v ) 0 20 40 60 8 0 100 01 1 10 0 . 00 . 0 1 time (s) po w er ( w ) 0.1 saf e operatin g area 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 10 s limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s,dc 100 ms v ds - drain - to- so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d www.din-tek.jp dt m4 9 25
5 typica l c har ac teri stic s 25 c, unless otherwise noted * t he power dissipation p d is based on t j(max) = 150 c, using junction-to-case th ermal resi stance, and is more useful in settling the upper dis si p at i on limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. curren t derating* 0 3 6 9 12 15 0 255075 1 00125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) pow er, junction- to -foot 0.0 1.2 2.4 3.6 4. 8 6.0 02 5507 5 100125150 t c - c as e t emper at u re (c) po w er ( w ) po wer dera ti ng, junction-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a -am b ient temper at u re (c) po w er ( w ) www.din-tek.jp dt m4 9 25
6 ty pi cal ch ara cteristics 25 c, unless otherwise noted normalized thermal tran sient imp edance, junction-to-ambient 10 -3 10 -2 000 1 10 1 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u ar e w a v ep u lse d u rat i on (s) n ormalized e ffecti v e transient thermal impedance 0.1 0.01 single p u ls e t 1 t 2 n otes: p dm 1. d u ty cycl e, d = 2. per unit base = r thja = 8 5 c/ w 3. t jm - t a =p dm z thja (t) t 1 t 2 4. s u rface m o u nted d u ty cycle = 0.5 1 normalized therm al tran sient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 0.05 0.02 sin g le p u ls e d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n or mal i z ed e ffecti v e transient thermal impedance 1 0.1 0.01 www.din-tek.jp dt m4 9 25
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 application note r ecommen ded minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) r e turn to index application note www.din-tek.jp
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