1: source 1 2: gate 1 7,8: drain 1 3: source 2 4: gate 2 5,6: drain 2 KRF7104 features adavanced process technology ultra low on-resistance dual p-channel mosfet surface mount available in tape & reel dynamic dv/dt rating fast switching absolute maximum ratings ta = 25 parameter symbol rating unit continuous drain current, v gs @10v@t a =25 i d -2.3 continuous drain current, v gs @10v@t a =70 i d -1.8 pulsed drain current *1 i dm -10 power dissipation @t c =25 p d 2.0 w linear derating factor 0.016 w/ gate-to-source voltage v gs 12 v peak diode recovery dv/dt *3 d v /d t -3 v/ns junction and storage temperature range t j ,t stg -55to+150 maximum junction-to-ambient *2 r ja 62.5 /w *1 repetitive rating; pulse width limited by max. junction temperature. *2 surface mounted on fr-4 board, t 10sec. *3 i sd -2.3a, d i /d t 100a/ s, v dd v (br)dss ,t j 150 a product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d = -250 a -20 v breakdown voltage temp. coefficient v(br)dss / t j i d = -1ma,reference to 25 -0.015 v/ v gs = -10v, i d = -1.0a*1 0.19 0.25 v gs =-4.5v,i d = -0.50a*1 0.30 0.40 gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -1.0 -3.0 v forward transconductance g fs v ds = -15v, i d = -2.3a*1 2.5 s v ds = -16v, v gs =0v -2.0 v ds = -16v, v gs =0v,t j =55 -25 gate-to-source forward leakage v gs = -12v -100 gate-to-source reverse leakage v gs = 12v 100 total gate charge q g i d = -2.3a 9.3 25 gate-to-source charge q gs v ds = -10v 1.6 gate-to-drain ("miller") charge q gd v gs = -10v * 3.0 turn-on delay time t d(on) v dd = -10v 12 40 rise time t r i d = -1.0a 16 40 turn-off delay time t d(off) r g =6 42 90 fall time t f r d =10 * 30 50 internal source inductance l s 4.0 internal drain inductance l d 6.0 input capacitance c iss v gs = 0v 290 output capacitance c oss v ds = -15v 210 reverse transfer capacitance c rss f = 1.0mhz 67 continuous source current body diode) i s -2.0 pulsed source current body diode) *2 i sm -9.2 diode forward voltage v sd t j =25 ,i s =-1.5a,v gs =0v*1 -1.2 v reverse recovery time t rr t j =25 ,i f =-1.5a 69 100 ns reverse recoverycharge q rr d i /d t = -100a/ s*1 90 140 c *1 pulse width 300 s; duty cycle 2%. *2 repetitive rating; pulse width limited by max. junction temperature. r ds(on) static drain-to-source on-resistance pf i dss ns drain-to-source leakage current a a i gss na nc nh KRF7104 product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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