august.2008.version2.0 magnachipsemiconductorltd . 1 MDD1653Csinglenchanneltrenchmosfet30v absoloutemaximunratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 30 v gatesourcevoltage v gss 20 v t c =25 o c 50 a continuousdraincurrent (1) t c =100 o c i d 50 a pulseddraincurrent i dm 150 a t c =25 o c 50 powerdissipation t c =100 o c p d 25 w t a =25 o c 3 powerdissipation t a =70 o c p dsm 2.1 w singlepulseavalancheenergy (2) e as 100 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 45 thermalresistance,junctiontocase r jc 2.5 o c/w MDD1653 30vnchanneltrenchmosfet:30v,50a,8.5m features v ds =30v i d =50a @v gs =10v r ds(on) <8.5m @v gs =10v <14.0m @v gs =4.5v generald escription theMDD1653usesadvancedmagnachip s mosfettechnology,whichprovideshigh performanceinonstateresistance,fastswitching performanceandexcellentquality. MDD1653is suitabledeviceforpwm,loadswitchingand generalpurposeapplications. free datasheet http:///
august.2008.version2.0 magnachipsemiconductorltd . 2 MDD1653Csinglenchanneltrenchmosfet30v electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdown voltage bv dss i d =250a,v gs =0v 30 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.0 1.9 3 v draincutoffcurrent i dss v ds =24v,v gs =0v 1 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 a v gs =10v,i d =30a 7.5 8.5 v gs =4.5v,i d =20a 11.5 14 drainsourceonresistance r ds(on) v gs =2.5v,i d =6.9a m onstatedraincurrent i d(on) v ds =5v,v gs =10v 100 a forwardtransconductance g fs v ds =5v,i d =10a 35 s dynamic characteristics totalgatecharge q g(10v) 17.6 totalgatecharge q g(4.5v) 9.2 gatesourcecharge q gs 3.0 gatedraincharge q gd v ds =12.5v,i d =20a,v gs =10v 3.8 nc inputcapacitance c iss 900 reversetransfercapacitance c rss 135 outputcapacitance c oss v ds =12.5v,v gs =0v,f=1.0mhz 260 pf turnon delaytime t d(on) 6.2 risetime t r 21.8 trunoffdelaytime t d(off) 17.6 falltime t f v gs =10v,v ds =12.5v,r l =0.6, r g =3 10.6 ns drainsourcebodydiodecharacteristics sourcedraindiodeforward voltage v sd i s =1a,v gs =0v 0.71 v bodydiodereverserecovery time t rr 25.0 ns bodydiodereverserecovery charge q rr i f =20a,dl/dt=100a/s 14.0 nc note: 1.surfacemountedrf4boardwith2oz.copper. 2.startingtj=25c,l=1mh,ias=10a,vdd=15v ,vgs=10v. orderinginformation partnumber temp.range package packing rohsstatus MDD1653t 55~150 o c dpak tube halogenfree MDD1653r 55~150 o c dpak tape&reel halogenfree
august.2008.version2.0 magnachipsemiconductorltd . 3 MDD1653Csinglenchanneltrenchmosfet30v 0 1 2 3 4 5 20 40 60 v gs ,gatesourcevoltage[v] t a =125 25 notes: v ds =5v i d ,draincurrent[a] fig.5transfercharacteristics fig.1on regioncharacteristics fig.2onresistancevariationwith draincurrentandgatevoltage fig.3onresistancevariationwith temperature fig.4onresistancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source currentandtemperature 0 1 2 3 4 5 0 20 40 60 80 100 3.5v 4.0v 4.5v 6.0v 5.0v 10v 3.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 0 10 20 30 40 50 60 0.0 0.1 0.2 10v 4.5v drainsourceonresistance[ohm] i d ,draincurrent[a] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes: 1.v gs =10v 2.i d =20a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 2 4 6 8 10 0 5 10 15 20 25 30 t a =25 t a =125 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 4 10 3 10 2 10 1 10 0 10 1 10 2 t a =125 notes: v gs =0v 25 i dr ,reversedraincurrent[a] v sd ,sourcedrainvoltage[v]
august.2008.version2.0 magnachipsemiconductorltd . 4 MDD1653Csinglenchanneltrenchmosfet30v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10 unclamped inductive switchingcapability fig.11maximumdraincurrent vs.casetemperature fig.12 transient thermal response curve 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 3 1s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t a =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 1e5 1e4 1e3 10 100 t j =25 i (as) ,avalanchecurrent(a) t av ,timeinavalanche(ms) 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r ja =96 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), normalizedthermalresponse t 1 ,rectangularpulseduration[sec] 0 5 10 15 0 2 4 6 8 10 note:i d =20a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 i d ,draincurrent[a] t c ,casetemperature[ ] 0 10 20 30 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v]
august.2008.version2.0 magnachipsemiconductorltd . 5 MDD1653Csinglenchanneltrenchmosfet30v fig13. single pulse maximum powerdissipation fig14. single pulse maximum peak current 1e3 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 singlepulse r ja =77 /w t a =25 p(pk),peaktransientpower[w] t 1 ,time[sec] 1e3 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 singlepulse r ja =96 /w t a =25 i(pk),peaktransientcurrent[a] t 1 ,time[sec]
august.2008.version2.0 magnachipsemiconductorltd . 6 MDD1653Csinglenchanneltrenchmosfet30v packagedimension
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